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    Use of plasma polymerized organosilicon films in fabrication of lift-off masks
    5.
    发明授权
    Use of plasma polymerized organosilicon films in fabrication of lift-off masks 失效
    使用等离子体聚合的有机硅膜制造剥离掩模

    公开(公告)号：US4599243A

    公开(公告)日：1986-07-08

    申请号：US668361

    申请日：1984-11-05

    Applicant: Harbans S. Sachdev ,  Krishna G. Sachdev

    Inventor： Harbans S. Sachdev ,  Krishna G. Sachdev

    IPC: G03F7/09 ,  B05D3/06

    CPC classification number: G03F7/094 ,  Y10S438/951

    Abstract: Pinhole-free thin films deposited by glow discharge or plasma polymerization of organosilanes, organosilazones and organosiloxanes for use as reactive ion etch oxygen barriers in multilayer resist structures, of lift-off masks, for fabrication of semiconductor devices, such as integrated circuits. The process includes deposition of thin plasma polymerized organosilicon barrier film over a radiation insensitive polymeric base layer previously coated on a substrate, followed by thermal annealing of the plasma polymerized barrier layer, over which is then coated a radiation sensitive resist layer. After definition of the desired resist pattern by imagewise exposure and development, the image is etch transferred into the barrier layer by reactive sputter etching in a fluorine containing ambient, and subsequently transferred into the base layer, down to the substrate, in an oxygen plasma, during which time the plasma deposited film functions as an oxygen barrier. Final metal patterns are formed by metallization and lift-off steps.

    Abstract translation: 通过辉光放电或有机硅烷，有机硅氧烷和有机硅氧烷的等离子体聚合沉积的无针孔薄膜，用作多层抗蚀剂结构中的反应离子蚀刻氧阻挡层，用于制造半导体器件（例如集成电路）的剥离掩模。 该方法包括将薄的等离子体聚合的有机硅阻挡膜沉积在预先涂覆在基底上的辐射不敏感的聚合物基底层上，随后对等离子体聚合的阻挡层进行热退火，然后在其上涂覆辐射敏感的抗蚀剂层。 在通过图像曝光和显影定义所需的抗蚀剂图案之后，通过在含氟环境中的反应性溅射蚀刻将图像蚀刻转移到阻挡层中，并随后在氧等离子体中转移到基底层中，到底层， 在此期间，等离子体沉积膜用作氧气屏障。 最终金属图案通过金属化和剥离步骤形成。

    Use of plasma polymerized orgaosilicon films in fabrication of lift-off masks
    6.
    发明授权
    Use of plasma polymerized orgaosilicon films in fabrication of lift-off masks 失效
    使用等离子体聚合硅胶膜制造剥离掩模

    公开(公告)号：US4562091A

    公开(公告)日：1985-12-31

    申请号：US668360

    申请日：1984-12-18

    Applicant: Harbans S. Sachdev ,  Krishna G. Sachdev

    Inventor： Harbans S. Sachdev ,  Krishna G. Sachdev

    IPC: G03F7/09 ,  B05D3/06

    CPC classification number: G03F7/094

    Abstract: Pinhole-free thin films deposited by glow discharge or plasma polymerization of organosilanes, organosilazones and organosiloxanes for use as reactive ion etch oxygen barriers in multilayer resist structures, of lift-off masks, for fabrication of semiconductor devices, such as integrated circuits. The process includes deposition of thin plasma polymerized organosilicon barrier film over a radiation insensitive polymeric base layer previously coated on a substrate, followed by thermal annealing of the plasma polymerized barrier layer, over which is then coated a radiation sensitive resist layer. After definition of the desired resist pattern by imagewise exposure and development, the image is etch transferred into the barrier layer by reactive sputter etching in a fluorine containing ambient, and subsequently transferred into the base layer, down to the substrate, in an oxygen plasma, during which time the plasma deposited film functions as an oxygen barrier. Final metal patterns are formed by metallization and lift-off steps.

    Abstract translation: 通过辉光放电或有机硅烷，有机硅氧烷和有机硅氧烷的等离子体聚合沉积的无针孔薄膜，用作多层抗蚀剂结构中的反应离子蚀刻氧阻挡层，用于制造半导体器件（例如集成电路）的剥离掩模。 该方法包括将薄的等离子体聚合的有机硅阻挡膜沉积在预先涂覆在基底上的辐射不敏感的聚合物基底层上，随后对等离子体聚合的阻挡层进行热退火，然后在其上涂覆辐射敏感的抗蚀剂层。 在通过图像曝光和显影定义所需的抗蚀剂图案之后，通过在含氟环境中的反应性溅射蚀刻将图像蚀刻转移到阻挡层中，并随后在氧等离子体中转移到基底层中，到底层， 在此期间，等离子体沉积膜用作氧气屏障。 最终金属图案通过金属化和剥离步骤形成。

    Use of plasma polymerized organosilicon films in fabrication of lift-off masks
    7.
    发明授权
    Use of plasma polymerized organosilicon films in fabrication of lift-off masks 失效

    公开(公告)号：US4493855A

    公开(公告)日：1985-01-15

    申请号：US452549

    申请日：1982-12-23

    Applicant: Harbans S. Sachdev ,  Krishna G. Sachdev

    Inventor： Harbans S. Sachdev ,  Krishna G. Sachdev

    IPC: H01L21/302 ,  G03F7/09 ,  H01L21/3065 ,  H01L21/3205 ,  B05D3/06

    CPC classification number: G03F7/094

    Abstract: Pinhole-free thin films deposited by glow discharge or plasma polymerization of organosilanes, organosilazones and organosiloxanes for use as reactive ion etch oxygen barriers in multilayer resist structures, of lift-off masks, for fabrication of semiconductor devices, such as integrated circuits. The process includes deposition of thin plasma polymerized organosilicon barrier film over a radiation insensitive polymeric base layer previously coated on a substrate, followed by thermal annealing of the plasma polymerized barrier layer, over which is then coated a radiation sensitive resist layer. After definition of the desired resist pattern by imagewise exposure and development, the image is etch transferred into the barrier layer by reactive sputter etching in a fluorine containing ambient, and subsequently transferred into the base layer, down to the substrate, in an oxygen plasma, during which time the plasma deposited film functions as an oxygen barrier. Final metal patterns are formed by metallization and lift-off steps.

    Chemical heat amplification in thermal transfer printing
    9.
    发明授权
    Chemical heat amplification in thermal transfer printing 失效
    热转印中的化学热放大

    公开(公告)号：US4525722A

    公开(公告)日：1985-06-25

    申请号：US582694

    申请日：1984-02-23

    Applicant: Krishna G. Sachdev ,  Harbans S. Sachdev ,  Ari Aviram ,  Mark A. Wizner

    Inventor： Krishna G. Sachdev ,  Harbans S. Sachdev ,  Ari Aviram ,  Mark A. Wizner

    IPC: B41M5/392 ,  B41J31/00 ,  B41J31/02 ,  B41M5/26 ,  G01D15/10

    CPC classification number: B41M5/392 ,  Y10S428/913 ,  Y10S428/914 ,  Y10S430/146

    Abstract: Chemical heat amplification is provided in thermal transfer printing, wherein some of the heat necessary for melting and transferring ink from a solid fusible layer in a ribbon to a receiving medium is provided by an exothermic reaction. This chemical reaction is due to an exothermic material that is located in the ink layer, or in another layer of the ink bearing ribbon. The exothermic reaction reduces the amount of the input power which must be applied either electrically or with electromagnetic waves. Examples of suitable exothermic materials are those which will provide heat within the operative temperature range of the ink, and specifically hydrazone derivatives which are substantially colorless, and have a molecular weight in the approximate range 150-650.

    Abstract translation: 在热转印中提供化学热放大，其中通过放热反应提供熔融和将油墨从带中的固体可熔层转移到接收介质所需的一些热。 这种化学反应是由于位于油墨层中的放热材料或油墨支承带的另一层。 放热反应减少必须通过电气或电磁波施加的输入功率的量。 合适的放热材料的实例是在油墨的操作温度范围内提供热量，特别是基本上无色的分子量为150-650的腙衍生物。

    Use of depolymerizable polymers in the fabrication of lift-off structure for multilevel metal processes
    10.
    发明授权
    Use of depolymerizable polymers in the fabrication of lift-off structure for multilevel metal processes 失效
    在制造多层金属工艺的剥离结构中使用可解聚聚合物

    公开(公告)号：US4519872A

    公开(公告)日：1985-05-28

    申请号：US619516

    申请日：1984-06-11

    Applicant: Herbert R. Anderson, Jr. ,  Harbans S. Sachdev ,  Krishna G. Sachdev

    Inventor： Herbert R. Anderson, Jr. ,  Harbans S. Sachdev ,  Krishna G. Sachdev

    IPC: H01L21/3205 ,  G03F7/039 ,  H01L21/027 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/768 ,  H05K3/04 ,  B44C1/22 ,  B29C17/08 ,  C03C15/00 ,  C03C25/06

    CPC classification number: H01L21/7688 ,  G03F7/039 ,  H01L21/0272 ,  H05K3/048 ,  Y10S438/951

    Abstract: An improved lift-off process for multilevel metal structure in the fabrication of integrated circuits by employing lift-off layer formed from polymers which undergo clean depolymerization under the influence of heat or radiation and allow rapid and residue-free release of an "expendable mask". An embedded interconnection metallurgy system is formed by application of the lift-off layer of this invention over a cured polymer film or on an oxygen RIE barrier layer previously deposited on organic or inorganic substrate, followed by another barrier over which is then coated a radiation sensitive resist layer. After definition of the desired resist pattern by imagewise exposure and development, the image is replicated into the barrier by sputter etching in a fluorine containing ambient and subsequently into the base layer down to the substrate by oxygen reactive ion etching which is followed by blanket metal evaporation and finally the lift-off by brief heat treatment at the depolymerization temperature of the lift-off layer, and brief solvent soak.

    Abstract translation: 通过采用由在热或辐射的影响下经历清洁解聚的聚合物形成的剥离层，并且允许快速和无残留地释放“消耗性掩模”，改进了用于多层金属结构在集成电路制造中的剥离过程， 。 通过将本发明的剥离层施加在固化的聚合物膜上或预先沉积在有机或无机基底上的氧RIE阻挡层上，随后再涂覆有辐射敏感的另一个屏障，形成嵌入式互连冶金系统 抗蚀剂层。 在通过图像曝光和显影定义所需的抗蚀剂图案之后，通过在含氟环境中的溅射蚀刻将图像复制到屏障中，随后通过橡皮布金属蒸发随后通过氧反应离子蚀刻沉积到基底中。 最后通过在剥离层的解聚温度下进行短暂热处理，并进行短暂的溶剂浸泡。

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