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公开(公告)号：US20170139060A1
公开(公告)日：2017-05-18
申请号：US15319965
申请日：2015-06-22
IPC分类号： G01T1/24 , H01L31/115 , H01L31/18 , G01T3/08
CPC分类号： G01T1/24 , G01T3/08 , H01L31/0328 , H01L31/115 , H01L31/1185 , H01L31/18
摘要： Methods for fabricating radiation-detecting structures are presented. The methods include, for instance: fabricating a radiation-detecting structure, the fabricating including: providing a semiconductor substrate, the semiconductor substrate having a plurality of cavities extending into the semiconductor substrate from a surface thereof; and electrophoretically depositing radiation-detecting particles of a radiation-detecting material into the plurality of cavities extending into the semiconductor substrate, where the electrophoretically depositing fills the plurality of cavities with the radiation-detecting particles. In one embodiment, the providing can include electrochemically etching the semiconductor substrate to form the plurality of cavities extending into the semiconductor substrate. In addition, the providing can further include patterning the surface of the semiconductor substrate with a plurality of surface defect areas, and the electrochemically etching can include using the plurality of surface defect areas to facilitate electrochemically etching into the semiconductor substrate through the plurality of surface defect areas to form the plurality of cavities.
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公开(公告)号：US20170170025A1
公开(公告)日：2017-06-15
申请号：US15116041
申请日：2015-02-10
IPC分类号： H01L21/3063 , H01L21/322 , H01L21/465
CPC分类号： H01L21/30635 , H01L21/3063 , H01L21/3228 , H01L21/465 , H01L29/00 , H01L29/1608 , H01L29/2003 , H01L29/6606 , H01L29/66204 , H01L29/66212 , H01L29/66333 , H01L29/7395 , H01L29/868 , H01L29/872
摘要： Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.
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公开(公告)号：US20150380593A1
公开(公告)日：2015-12-31
申请号：US14850426
申请日：2015-09-10
IPC分类号： H01L31/115 , G01T3/08 , H01L31/18 , H01L27/144 , H01L31/0352
CPC分类号： H01L31/115 , G01T3/00 , G01T3/08 , H01L27/142 , H01L27/1443 , H01L31/02161 , H01L31/03529 , H01L31/18 , Y02E10/50
摘要： Neutron-detecting structures and methods of fabrication are provided which include: a substrate with a plurality of cavities extending into the substrate from a surface; a p-n junction within the substrate and extending, at least in part, in spaced opposing relation to inner cavity walls of the substrate defining the plurality of cavities; and a neutron-responsive material disposed within the plurality of cavities. The neutron-responsive material is responsive to neutrons absorbed for releasing ionization radiation products, and the p-n junction within the substrate spaced in opposing relation to and extending, at least in part, along the inner cavity walls of the substrate reduces leakage current of the neutron-detecting structure.
摘要翻译： 提供中子检测结构和制造方法，其包括：具有从表面延伸到基板中的多个空腔的基板; 在衬底内的p-n结，并且至少部分地与限定多个空腔的衬底的内腔壁间隔开相对的关系; 以及设置在所述多个空腔内的中子响应材料。 中子响应材料对吸收的中子响应于释放电离辐射产物，并且衬底内的pn结与衬底的内腔壁至少部分相对地间隔开并且至少部分地沿着衬底的内腔壁延伸，减少了中子的漏电流 - 检测结构。
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公开(公告)号：US20170133543A1
公开(公告)日：2017-05-11
申请号：US15319979
申请日：2015-06-22
IPC分类号： H01L31/115 , H01L31/0304 , H01L31/0384 , H01L31/18
CPC分类号： H01L31/115 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02562 , H01L21/0262 , H01L31/03044 , H01L31/0384 , H01L31/184 , H01L31/1856 , Y02E10/544
摘要： Radiation detecting-structures and fabrications methods thereof are presented. The methods include, for instance: providing a substrate, the substrate including at least one trench extending into the substrate from an upper surface thereof; and epitaxially forming a radiation-responsive semiconductor material layer from one or more sidewalls of the at least one trench of the substrate, the radiation-responsive semiconductor material layer responding to incident radiation by generating charge carriers therein. In one embodiment, the sidewalls of the at least one trench of the substrate include a (111) surface of the substrate, which facilitates epitaxially forming the radiation-responsive semiconductor material layer. In another embodiment, the radiation-responsive semiconductor material layer includes hexagonal boron nitride, and the epitaxially forming includes providing the hexagonal boron nitride with an a-axis aligned parallel to the sidewalls of the trench.
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公开(公告)号：US20140252520A1
公开(公告)日：2014-09-11
申请号：US14074131
申请日：2013-11-07
IPC分类号： G01T3/08 , H01L31/115
CPC分类号： H01L31/115 , G01T3/00 , G01T3/08 , H01L27/142 , H01L27/1443 , H01L31/02161 , H01L31/03529 , H01L31/18 , Y02E10/50
摘要： Neutron-detecting structures and methods of fabrication are provided which include: a substrate with a plurality of cavities extending into the substrate from a surface; a p-n junction within the substrate and extending, at least in part, in spaced opposing relation to inner cavity walls of the substrate defining the plurality of cavities; and a neutron-responsive material disposed within the plurality of cavities. The neutron-responsive material is responsive to neutrons absorbed for releasing ionization radiation products, and the p-n junction within the substrate spaced in opposing relation to and extending, at least in part, along the inner cavity walls of the substrate reduces leakage current of the neutron-detecting structure.
摘要翻译： 提供中子检测结构和制造方法，其包括：具有从表面延伸到基板中的多个空腔的基板; 在衬底内的p-n结，并且至少部分地与限定多个空腔的衬底的内腔壁间隔开相对的关系; 以及设置在所述多个空腔内的中子响应材料。 中子响应材料对吸收的中子响应于释放电离辐射产物，并且衬底内的pn结与衬底的内腔壁至少部分相对地间隔开并且至少部分地沿着衬底的内腔壁延伸，减少了中子的漏电流 - 检测结构。
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