-
1.
公开(公告)号:US09947651B2
公开(公告)日:2018-04-17
申请号:US13910891
申请日:2013-06-05
发明人: Takeo Toba , Kazuo Tanaka , Hiroyasu Ishizuka
IPC分类号: H01L27/092 , H01L27/02 , H01L23/00 , H01L27/118
CPC分类号: H01L27/0292 , H01L24/06 , H01L27/0207 , H01L27/0251 , H01L27/11898 , H01L2224/05553 , H01L2224/06 , H01L2924/1301 , H01L2924/13091 , H01L2924/14 , H01L2924/00
摘要: A semiconductor integrated circuit device with a “PAD on I/O cell” structure in which a pad lead part is disposed almost in the center of an I/O part so as to reduce the chip layout area. In the I/O part, a transistor lies nearest to the periphery of the semiconductor chip. When seen in a plan view of the I/O part, a resistance lies above the transistor and a first and a second diode lie above the resistance; a second transistor lies above the diodes; and a logic block lies above the second transistor with a pad lead part, for example, formed in a metal wiring layer, therebetween. This permits the pad through the second transistor to be on the same node and therefore the pad lead part can be disposed almost in the center of the I/O part.
-
公开(公告)号:US09515019B2
公开(公告)日:2016-12-06
申请号:US15099574
申请日:2016-04-14
IPC分类号: H01L29/74 , H01L23/50 , H01L23/498 , H01L27/092 , H01L27/02
CPC分类号: H01L23/49844 , H01L23/49811 , H01L23/50 , H01L23/5226 , H01L23/5286 , H01L23/53228 , H01L23/585 , H01L24/05 , H01L24/06 , H01L24/49 , H01L27/0255 , H01L27/092 , H01L2224/02166 , H01L2224/05025 , H01L2224/05093 , H01L2224/05095 , H01L2224/05124 , H01L2224/05624 , H01L2224/06102 , H01L2224/06133 , H01L2224/06143 , H01L2224/06153 , H01L2224/06163 , H01L2224/49105 , H01L2224/85399 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01082 , H01L2924/12036 , H01L2924/1306 , H01L2924/14 , H01L2924/00 , H01L2224/05599 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要: The present invention has for its purpose to provide a technique capable of reducing planar dimension of the semiconductor device. An input/output circuit is formed over the semiconductor substrate, a grounding wiring and a power supply wiring pass over the input/output circuit, and a conductive layer for a bonding pad is formed thereover. The input/output circuit is formed of MISFET elements in the nMISFET forming region and the pMISFET forming region, resistance elements in the resistance element forming regions and diode elements in the diode element forming regions functioning as protective elements. A wiring connected to the protective elements and positioned under the grounding wiring and the power supply wiring is pulled out in a pulling-out region between the nMISFET forming region and the pMISFET forming region and between the grounding wiring and the power supply wiring to be connected to the conductive layer.
摘要翻译: 本发明的目的是提供一种能够减小半导体器件的平面尺寸的技术。 在半导体衬底上形成输入/输出电路,接地布线和电源布线通过输入/输出电路,并且在其上形成用于焊盘的导电层。 输入/输出电路由nMISFET形成区域和pMISFET形成区域中的MISFET元件形成,电阻元件形成区域中的电阻元件和用作保护元件的二极管元件形成区域中的二极管元件。 连接到保护元件并位于接地布线和电源布线下方的布线在nMISFET形成区域和pMISFET形成区域之间以及接地布线和要连接的电源布线之间的拉出区域中拉出 到导电层。
-
公开(公告)号:US09379100B2
公开(公告)日:2016-06-28
申请号:US14953319
申请日:2015-11-28
IPC分类号: H03K19/0175 , H01L27/02 , H01L27/118
CPC分类号: H01L27/0288 , H01L24/06 , H01L27/0207 , H01L27/0262 , H01L27/11898 , H01L2027/11875 , H01L2224/05554 , H03K19/0175 , H03K19/08
摘要: A semiconductor integrated circuit device comprises I/O cells arranged around a core region. Each of the I/O cells comprises a level shifter circuit, an I/O logic circuit, and an I/O buffer circuit. An I/O logic region in which the I/O logic circuit is arranged and an I/O buffer region in which the I/O buffer circuit is arranged overlap with a region in which a pad for the I/O cell is arranged. The I/O logic region and the I/O buffer region are arranged side by side in a direction parallel to a side of the core region.
-
公开(公告)号:US20160079231A1
公开(公告)日:2016-03-17
申请号:US14953319
申请日:2015-11-28
IPC分类号: H01L27/02 , H01L27/118
CPC分类号: H01L27/0288 , H01L24/06 , H01L27/0207 , H01L27/0262 , H01L27/11898 , H01L2027/11875 , H01L2224/05554 , H03K19/0175 , H03K19/08
摘要: A semiconductor integrated circuit device comprises I/O cells arranged around a core region. Each of the I/O cells comprises a level shifter circuit, an I/O logic circuit, and an I/O buffer circuit. An I/O logic region in which the I/O logic circuit is arranged and an I/O buffer region in which the I/O buffer circuit is arranged overlap with a region in which a pad for the I/O cell is arranged. The I/O logic region and the I/O buffer region are arranged side by side in a direction parallel to a side of the core region.
-
公开(公告)号:US20160233154A1
公开(公告)日:2016-08-11
申请号:US15099574
申请日:2016-04-14
IPC分类号: H01L23/498 , H01L27/02 , H01L23/50 , H01L27/092
CPC分类号: H01L23/49844 , H01L23/49811 , H01L23/50 , H01L23/5226 , H01L23/5286 , H01L23/53228 , H01L23/585 , H01L24/05 , H01L24/06 , H01L24/49 , H01L27/0255 , H01L27/092 , H01L2224/02166 , H01L2224/05025 , H01L2224/05093 , H01L2224/05095 , H01L2224/05124 , H01L2224/05624 , H01L2224/06102 , H01L2224/06133 , H01L2224/06143 , H01L2224/06153 , H01L2224/06163 , H01L2224/49105 , H01L2224/85399 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01082 , H01L2924/12036 , H01L2924/1306 , H01L2924/14 , H01L2924/00 , H01L2224/05599 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要: The present invention has for its purpose to provide a technique capable of reducing planar dimension of the semiconductor device. An input/output circuit is formed over the semiconductor substrate, a grounding wiring and a power supply wiring pass over the input/output circuit, and a conductive layer for a bonding pad is formed thereover. The input/output circuit is formed of MISFET elements in the nMISFET forming region and the pMISFET forming region, resistance elements in the resistance element forming regions and diode elements in the diode element forming regions functioning as protective elements. A wiring connected to the protective elements and positioned under the grounding wiring and the power supply wiring is pulled out in a pulling-out region between the nMISFET forming region and the pMISFET forming region and between the grounding wiring and the power supply wiring to be connected to the conductive layer.
-
公开(公告)号:US09343460B2
公开(公告)日:2016-05-17
申请号:US14746774
申请日:2015-06-22
IPC分类号: H01L29/74 , H01L27/092 , H01L23/528 , H01L23/58 , H01L23/00 , H01L27/02 , H01L23/498 , H01L23/532 , H01L23/522
CPC分类号: H01L23/49844 , H01L23/49811 , H01L23/50 , H01L23/5226 , H01L23/5286 , H01L23/53228 , H01L23/585 , H01L24/05 , H01L24/06 , H01L24/49 , H01L27/0255 , H01L27/092 , H01L2224/02166 , H01L2224/05025 , H01L2224/05093 , H01L2224/05095 , H01L2224/05124 , H01L2224/05624 , H01L2224/06102 , H01L2224/06133 , H01L2224/06143 , H01L2224/06153 , H01L2224/06163 , H01L2224/49105 , H01L2224/85399 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01082 , H01L2924/12036 , H01L2924/1306 , H01L2924/14 , H01L2924/00 , H01L2224/05599 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要: The present invention has for its purpose to provide a technique capable of reducing planar dimension of the semiconductor device. An input/output circuit is formed over the semiconductor substrate, a grounding wiring and a power supply wiring pass over the input/output circuit, and a conductive layer for a bonding pad is formed thereover. The input/output circuit is formed of MISFET elements in the nMISFET forming region and the pMISFET forming region, resistance elements in the resistance element forming regions and diode elements in the diode element forming regions functioning as protective elements. A wiring connected to the protective elements and positioned under the grounding wiring and the power supply wiring is pulled out in a pulling-out region between the nMISFET forming region and the pMISFET forming region and between the grounding wiring and the power supply wiring to be connected to the conductive layer.
摘要翻译: 本发明的目的是提供一种能够减小半导体器件的平面尺寸的技术。 在半导体衬底上形成输入/输出电路,接地布线和电源布线通过输入/输出电路,并且在其上形成用于焊盘的导电层。 输入/输出电路由nMISFET形成区域和pMISFET形成区域中的MISFET元件形成,电阻元件形成区域中的电阻元件和用作保护元件的二极管元件形成区域中的二极管元件。 连接到保护元件并位于接地布线和电源布线下方的布线在nMISFET形成区域和pMISFET形成区域之间以及接地布线和要连接的电源布线之间的拉出区域中拉出 到导电层。
-
公开(公告)号:US09214217B2
公开(公告)日:2015-12-15
申请号:US14450247
申请日:2014-08-03
发明人: Natsuki Ikehata , Kazuo Tanaka , Takeo Toba , Masashi Arakawa
IPC分类号: H03F3/45 , G11C11/4076 , G11C7/10 , G11C11/4093 , G11C11/4096 , G11C11/4091
CPC分类号: G11C11/4091 , G11C7/10 , G11C7/1057 , G11C7/1072 , G11C7/1084 , G11C11/4076 , G11C11/4093 , G11C11/4096
摘要: An output signal characteristic of a differential amplifier circuit is improved. When an input data signal becomes ‘Low’, current flowing through a first transistor will decrease and potential at a connection (a node) between a first resistor and a second resistor will increase. This potential is input (negatively fed back) to the gate of a second transistor, and because this gate potential increases, a tail current amount is adjusted in an increasing direction. When the input data signal becomes ‘High’, the current of the first transistor increases and thus the potential at the node decreases. Thus, the gate potential (negative feedback) of the second transistor decreases, and the tail current amount is adjusted in a decreasing direction. Thus, in the rising and falling of an input waveform, the difference in a delay time with respect to the output waveform decreases, respectively.
摘要翻译: 差分放大电路的输出信号特性得到改善。 当输入数据信号为“低”时,流过第一晶体管的电流将减小,并且第一电阻和第二电阻之间的连接(节点)的电位将增加。 该电位被输入(负反馈)到第二晶体管的栅极,并且由于该栅极电位增加,所以在增加的方向上调节尾部电流量。 当输入数据信号为“高”时,第一晶体管的电流增加,因此节点处的电位减小。 因此,第二晶体管的栅极电位(负反馈)减小,并且沿着减小的方向调整尾电流量。 因此,在输入波形的上升和下降中,延迟时间相对于输出波形的差别分别减小。
-
公开(公告)号:US09093283B2
公开(公告)日:2015-07-28
申请号:US14591817
申请日:2015-01-07
IPC分类号: H01L29/74 , H01L23/00 , H01L27/092 , H01L23/528
CPC分类号: H01L23/49844 , H01L23/49811 , H01L23/50 , H01L23/5226 , H01L23/5286 , H01L23/53228 , H01L23/585 , H01L24/05 , H01L24/06 , H01L24/49 , H01L27/0255 , H01L27/092 , H01L2224/02166 , H01L2224/05025 , H01L2224/05093 , H01L2224/05095 , H01L2224/05124 , H01L2224/05624 , H01L2224/06102 , H01L2224/06133 , H01L2224/06143 , H01L2224/06153 , H01L2224/06163 , H01L2224/49105 , H01L2224/85399 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01082 , H01L2924/12036 , H01L2924/1306 , H01L2924/14 , H01L2924/00 , H01L2224/05599 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要: The present invention has for its purpose to provide a technique capable of reducing planar dimension of the semiconductor device. An input/output circuit is formed over the semiconductor substrate, a grounding wiring and a power supply wiring pass over the input/output circuit, and a conductive layer for a bonding pad is formed thereover. The input/output circuit is formed of MISFET elements in the nMISFET forming region and the pMISFET forming region, resistance elements in the resistance element forming regions and diode elements in the diode element forming regions functioning as protective elements. A wiring connected to the protective elements and positioned under the grounding wiring and the power supply wiring is pulled out in a pulling-out region between the nMISFET forming region and the pMISFET forming region and between the grounding wiring and the power supply wiring to be connected to the conductive layer.
摘要翻译: 本发明的目的是提供一种能够减小半导体器件的平面尺寸的技术。 在半导体衬底上形成输入/输出电路,接地布线和电源布线通过输入/输出电路,并且在其上形成用于焊盘的导电层。 输入/输出电路由nMISFET形成区域和pMISFET形成区域中的MISFET元件形成,电阻元件形成区域中的电阻元件和用作保护元件的二极管元件形成区域中的二极管元件。 连接到保护元件并位于接地布线和电源布线下方的布线在nMISFET形成区域和pMISFET形成区域之间以及接地布线和要连接的电源布线之间的拉出区域中拉出 到导电层。
-
公开(公告)号:US20150108579A1
公开(公告)日:2015-04-23
申请号:US14591817
申请日:2015-01-07
IPC分类号: H01L23/00 , H01L27/092
CPC分类号: H01L23/49844 , H01L23/49811 , H01L23/50 , H01L23/5226 , H01L23/5286 , H01L23/53228 , H01L23/585 , H01L24/05 , H01L24/06 , H01L24/49 , H01L27/0255 , H01L27/092 , H01L2224/02166 , H01L2224/05025 , H01L2224/05093 , H01L2224/05095 , H01L2224/05124 , H01L2224/05624 , H01L2224/06102 , H01L2224/06133 , H01L2224/06143 , H01L2224/06153 , H01L2224/06163 , H01L2224/49105 , H01L2224/85399 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01082 , H01L2924/12036 , H01L2924/1306 , H01L2924/14 , H01L2924/00 , H01L2224/05599 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要: The present invention has for its purpose to provide a technique capable of reducing planar dimension of the semiconductor device. An input/output circuit is formed over the semiconductor substrate, a grounding wiring and a power supply wiring pass over the input/output circuit, and a conductive layer for a bonding pad is formed thereover. The input/output circuit is formed of MISFET elements in the nMISFET forming region and the pMISFET forming region, resistance elements in the resistance element forming regions and diode elements in the diode element forming regions functioning as protective elements. A wiring connected to the protective elements and positioned under the grounding wiring and the power supply wiring is pulled out in a pulling-out region between the nMISFET forming region and the pMISFET forming region and between the grounding wiring and the power supply wiring to be connected to the conductive layer.
-
公开(公告)号:US20140334240A1
公开(公告)日:2014-11-13
申请号:US14450247
申请日:2014-08-03
发明人: Natsuki Ikehata , Kazuo Tanaka , Takeo Toba , Masashi Arakawa
IPC分类号: G11C11/4076 , G11C11/4091
CPC分类号: G11C11/4091 , G11C7/10 , G11C7/1057 , G11C7/1072 , G11C7/1084 , G11C11/4076 , G11C11/4093 , G11C11/4096
摘要: An output signal characteristic of a differential amplifier circuit is improved. When an input data signal becomes ‘Low’, current flowing through a first transistor will decrease and potential at a connection (a node) between a first resistor and a second resistor will increase. This potential is input (negatively fed back) to the gate of a second transistor, and because this gate potential increases, a tail current amount is adjusted in an increasing direction. When the input data signal becomes ‘High’, the current of the first transistor increases and thus the potential at the node decreases. Thus, the gate potential (negative feedback) of the second transistor decreases, and the tail current amount is adjusted in a decreasing direction. Thus, in the rising and falling of an input waveform, the difference in a delay time with respect to the output waveform decreases, respectively.
摘要翻译: 差分放大电路的输出信号特性得到改善。 当输入数据信号为“低”时,流过第一晶体管的电流将减小,并且第一电阻和第二电阻之间的连接(节点)的电位将增加。 该电位被输入(负反馈)到第二晶体管的栅极,并且由于该栅极电位增加,所以在增加的方向上调节尾部电流量。 当输入数据信号为“高”时,第一晶体管的电流增加,因此节点处的电位减小。 因此,第二晶体管的栅极电位(负反馈)减小,并且沿着减小的方向调整尾电流量。 因此,在输入波形的上升和下降中,延迟时间相对于输出波形的差别分别减小。
-
-
-
-
-
-
-
-
-