METHOD OF FORMING A CMOS STRUCTURE HAVING GATE INSULATION FILMS OF DIFFERENT THICKNESSES
    4.
    发明申请
    METHOD OF FORMING A CMOS STRUCTURE HAVING GATE INSULATION FILMS OF DIFFERENT THICKNESSES 有权
    形成具有不同厚度的门绝缘膜的CMOS结构的方法

    公开(公告)号:US20140252495A1

    公开(公告)日:2014-09-11

    申请号:US14176328

    申请日:2014-02-10

    Abstract: The semiconductor integrated circuit device employs on the same silicon substrate a plurality of kinds of MOS transistors with different magnitudes of tunnel current flowing either between the source and gate or between the drain and gate thereof. These MOS transistors include tunnel-current increased MOS transistors at least one of which is for use in constituting a main circuit of the device. The plurality of kinds of MOS transistors also include tunnel-current reduced or depleted MOS transistors at least one of which is for use with a control circuit. This control circuit is inserted between the main circuit and at least one of the two power supply units.

    Abstract translation: 半导体集成电路器件在相同的硅衬底上采用具有在源极和栅极之间或其漏极和栅极之间流动的不同大小的隧道电流的多种MOS晶体管。 这些MOS晶体管包括隧道电流增加的MOS晶体管,其中至少一个用于构成器件的主电路。 多种MOS晶体管还包括隧道电流减少或耗尽的MOS晶体管,其中至少一个用于控制电路。 该控制电路插入在主电路和两个电源单元中的至少一个之间。

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