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公开(公告)号:US20250098066A1
公开(公告)日:2025-03-20
申请号:US18470148
申请日:2023-09-19
Applicant: QUALCOMM Incorporated
Inventor: Hong Bok WE , Joan Rey Villarba BUOT , Sang-Jae LEE , Zhijie WANG
IPC: H05K1/11 , H01L23/00 , H01L23/498 , H01L23/538 , H01L25/065
Abstract: A substrate comprising a core layer, at least one first dielectric layer coupled to a first surface of the core layer, at least one second dielectric layer coupled to a second surface of the core layer, a plurality of interconnects located at least partially in the at least one first dielectric layer; a region comprising a plurality of block interconnects of an interconnect block; and a solder resist layer coupled to the at least one first dielectric layer.
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公开(公告)号:US20240276739A1
公开(公告)日:2024-08-15
申请号:US18168331
申请日:2023-02-13
Applicant: QUALCOMM Incorporated
Inventor: Aniket PATIL , Hong Bok WE , Zhijie WANG
IPC: H10B80/00 , H01L23/00 , H01L23/498 , H01L25/16
CPC classification number: H10B80/00 , H01L23/49833 , H01L24/16 , H01L25/162 , H01L23/49816 , H01L2224/16225 , H01L2924/1436 , H01L2924/19041 , H01L2924/19105 , H01L2924/19106
Abstract: Disclosed is a stacked substrate package that incorporate surface mounted devices (SMD) between the base and interposer substrates. The SMDs, which may be passive devices (e.g., capacitor, inductor, resistor, etc.), may be electrically coupled to power distribution routing layers of the base and/or the interposer substrates. In this way, clean power may be provided to the devices (e.g., SoC dies, memory dies, etc.) of the stacked substrate package.
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公开(公告)号:US20220375838A1
公开(公告)日:2022-11-24
申请号:US17328666
申请日:2021-05-24
Applicant: QUALCOMM Incorporated
Inventor: Hong Bok WE , Aniket PATIL , Zhijie WANG , Marcus HSU
IPC: H01L23/498 , H01L23/538 , H01L23/00 , H01L23/535 , H01L23/28
Abstract: A package comprising a first integrated device comprising a first plurality of under bump metallization interconnects; a second integrated device comprising a second plurality of under bump metallization interconnects; a bridge coupled to the first integrated device and the second integrated device; an encapsulation layer at least partially encapsulating the first integrated device, the second integrated device, and the bridge; a metallization portion located over the first integrated device, the second integrated device, the bridge and the encapsulation layer, where the metallization portion includes at least one dielectric layer and a plurality of metallization interconnects; a first plurality of pillar interconnects coupled to the first plurality of under bump metallization interconnects, the first plurality of interconnects located in the encapsulation layer; and a second plurality of pillar interconnects coupled to the second plurality of under bump metallization interconnects, the second plurality of pillar interconnects located in the encapsulation layer.
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4.
公开(公告)号:US20210272931A1
公开(公告)日:2021-09-02
申请号:US16803804
申请日:2020-02-27
Applicant: QUALCOMM Incorporated
Inventor: Aniket PATIL , Zhijie WANG , Hong Bok WE
IPC: H01L25/065 , H01L23/498 , H01L23/538 , H01L21/56
Abstract: A package comprising a substrate, an integrated device, and an interconnect structure. The substrate includes a first surface and a second surface. The substrate further includes a plurality of interconnects for providing at least one electrical connection to a board. The integrated device is coupled to the first surface of the substrate. The interconnect structure is coupled to the first surface of the substrate. The integrated device, the interconnect structure and the substrate are coupled together in such a way that when a first electrical signal travels between the integrated device and the board, the first electrical signal travels through at least the substrate, then through the interconnect structure and back through the substrate.
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公开(公告)号:US20250132262A1
公开(公告)日:2025-04-24
申请号:US18649229
申请日:2024-04-29
Applicant: QUALCOMM Incorporated
Inventor: Joan Rey Villarba BUOT , Hong Bok WE , Zhijie WANG , Sang-Jae LEE
IPC: H01L23/538 , H01L21/48 , H01L23/00 , H01L25/10
Abstract: A device includes a substrate that includes a first layer stack including metal and dielectric layers. A first metal layer includes first contacts disposed in a first region and to electrically connect to an IC device, via pads disposed in a second region offset along a first direction, and traces electrically connecting the first contacts and the via pads. The substrate includes, in both regions, a solder resist layer disposed on the first metal layer and a first dielectric layer. The solder resist layer defines openings to the first contacts and the via pads. The substrate includes a second layer stack disposed on the second region and including a second metal layer on the solder resist layer opposite the first layer stack. The second metal layer defines second contacts to electrically connect to second IC device(s) and includes conductive vias between the via pads and the second contacts.
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公开(公告)号:US20250125244A1
公开(公告)日:2025-04-17
申请号:US18605481
申请日:2024-03-14
Applicant: QUALCOMM Incorporated
Inventor: Manuel ALDRETE , Rajneesh KUMAR , Zhijie WANG , Aniket PATIL , Srikanth KULKARNI
Abstract: In an aspect, an integrated circuit (IC) package includes a base structure, an IC component disposed on the base structure, a plurality of interposer connection structures disposed on the base structure, and an interposer structure disposed over the IC component and the plurality of interposer connection structures. The plurality of interposer connection structures is configured to connect the base structure and the interposer structure. Each interposer connection structure of the plurality of interposer connection structures includes a bond ball portion that is connected to the interposer structure, and a bond wire portion that is coupled to the bond ball portion and extends toward the base structure. A width of the bond ball portion is greater than a width of the bond wire portion.
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公开(公告)号:US20250079277A1
公开(公告)日:2025-03-06
申请号:US18457162
申请日:2023-08-28
Applicant: QUALCOMM Incorporated
Inventor: Aniket PATIL , Manuel ALDRETE , Zhijie WANG , Piyush GUPTA , Rajneesh KUMAR
IPC: H01L23/498 , H01L21/48 , H01L23/31 , H01L25/10 , H10B80/00
Abstract: An integrated circuit (IC) device includes a substrate. The substrate includes a first side having a stepped configuration having a first surface that is elevated relative to a second surface. The first surface includes first solder resist openings (SROs), and the second surface includes second SROs. The IC device includes a first set of solder balls electrically connected to a first set of contacts in the first SROs. A solder ball of the first set of solder balls has a first characteristic dimension. The IC device also includes a second set of solder balls electrically connected to a second set of contacts in the second SROs. A solder ball of the second set of solder balls has a second characteristic dimension larger than the first characteristic dimension.
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公开(公告)号:US20240105687A1
公开(公告)日:2024-03-28
申请号:US17951702
申请日:2022-09-23
Applicant: QUALCOMM Incorporated
Inventor: Joan Rey Villarba BUOT , Hong Bok WE , Zhijie WANG , Aniket PATIL
IPC: H01L25/10 , H01L23/31 , H01L23/498 , H01L23/538
CPC classification number: H01L25/105 , H01L23/3128 , H01L23/49816 , H01L23/5387
Abstract: A package comprising a substrate, a first integrated device coupled to a first surface of the substrate, and a second integrated device coupled to the first surface of the substrate; wherein a back side of the second integrated device is coupled to a back side of the first integrated device through an adhesive. The substrate includes at least one dielectric layer and a plurality of interconnects. The substrate includes a flexible portion that is configured to be bend such that the back side of the first integrated device faces the back side of the second integrated device in the package.
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公开(公告)号:US20230369261A1
公开(公告)日:2023-11-16
申请号:US17741998
申请日:2022-05-11
Applicant: QUALCOMM Incorporated
Inventor: Yangyang SUN , Zhijie WANG , Wei WANG , Marcus HSU
IPC: H01L23/00 , H01L23/28 , H01L25/065
CPC classification number: H01L24/05 , H01L23/28 , H01L24/18 , H01L24/29 , H01L24/73 , H01L25/0657 , H01L24/03 , H01L2224/039 , H01L2224/0346 , H01L2224/05647 , H01L2224/18 , H01L2224/03436
Abstract: A package comprising a first substrate; a first integrated device coupled to the first substrate; an interconnection die coupled to the first substrate; a second substrate coupled to the first substrate through the interconnection die such that the first integrated device and the interconnection die are located between the first substrate and the second substrate; and an encapsulation layer coupled to the first substrate and the second substrate, wherein the encapsulation layer is located between the first substrate and the second substrate.
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10.
公开(公告)号:US20230230908A1
公开(公告)日:2023-07-20
申请号:US17579434
申请日:2022-01-19
Applicant: QUALCOMM Incorporated
Inventor: Joan Rey Villarba BUOT , Zhijie WANG , Hong Bok WE , Aniket PATIL
IPC: H01L23/498 , H01L23/538 , H01L23/00 , H01L23/532 , H01L21/60
CPC classification number: H01L23/49816 , H01L23/5386 , H01L24/14 , H01L23/53233 , H01L21/60
Abstract: A package comprising a first substrate, a first integrated device coupled to the first substrate, and a second substrate, and a plurality of solder interconnects coupled to the first substrate and the second substrate. The first substrate comprises at least one first dielectric layer; a first plurality of interconnects, wherein the first plurality of interconnects include a first plurality of post interconnects; and a first solder resist layer coupled to a first surface of the first substrate. The second substrate comprises a first surface and a second surface; at least one second dielectric layer; a second plurality of interconnects, wherein the second plurality of interconnects comprises a second plurality of post interconnects; and a second solder resist layer coupled to the second surface of the second substrate. The second surface of the second substrate faces the first substrate. The second solder resist layer includes a cavity.
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