公开(公告)号：US20190326401A1

公开(公告)日：2019-10-24

申请号：US15958792

申请日：2018-04-20

Applicant: QUALCOMM Incorporated

Inventor： Plamen Vassilev KOLEV ,  Sinan GOKTEPELI ,  Peter Graeme CLARKE

IPC: H01L29/10 ,  H01L29/78 ,  H01L29/66

Abstract: In certain aspects, a silicon-on-insulator device comprises a back insulating layer and a semiconductor layer on the back insulating layer. The semiconductor layer includes a source region of a first conductive type having a front source surface and a back source surface, a channel region of a second conductive type have a front channel surface and a back channel surface, and a drain region of the first conductive type. The silicon-on-insulator device further comprises a gate insulating layer on the front channel surface of the channel region and a back silicidation layer on at least a portion of the back source surface and a portion of back channel surface.

公开(公告)号：US20240022221A1

公开(公告)日：2024-01-18

申请号：US18319227

申请日：2023-05-17

Applicant: QUALCOMM Incorporated

Inventor： Zaid ABOUSH ,  Noshir Behli DUBASH ,  Abhijeet PAUL ,  Peter Graeme CLARKE

IPC: H03F3/24 ,  H03F1/22 ,  H03F1/02

CPC classification number: H03F3/245 ,  H03F1/223 ,  H03F1/0277 ,  H03F2200/451 ,  H03F2200/294

Abstract: Devices and techniques for amplifying a signal are disclosed. For instance, an amplifier includes an input node and an output node; a first gain segment including: a first transistor, where a gate of the first transistor is coupled to the input node, a first terminal of the first transistor is coupled to a ground, and a second terminal of the first transistor is coupled to the output node; a second gain segment including: a second transistor, where a gate of the second transistor is coupled to the input node, a first terminal of the second transistor is coupled to the ground, and a second terminal of the second transistor is coupled to the output node, where the first gain segment and the second gain segment are arranged in parallel with respect to the output node; and a bias circuit.

公开(公告)号：US20200013884A1

公开(公告)日：2020-01-09

申请号：US16027002

申请日：2018-07-03

Applicant: QUALCOMM Incorporated

Inventor： Sinan GOKTEPELI ,  Plamen Vassilev KOLEV ,  Peter Graeme CLARKE

IPC: H01L29/737 ,  H01L29/417 ,  H01L29/423 ,  H01L29/06 ,  H01L29/10 ,  H01L29/08 ,  H01L29/45 ,  H01L29/66 ,  H01L21/762 ,  H01L21/3105 ,  H01L21/306 ,  H01L21/02

Abstract: A Bipolar Junction Transistor (BJT) comprises an emitter, a collector, and a base between the emitter and the collector. The BJT also comprises an emitter contact on a first side of the BJT, a base contact on the first side of the BJT, and a collector contact on a second side of the BJT. The BJT further comprises a Deep Trench Isolation (DTI) region extending from the first side of the BJT to the second side of the BJT.

公开(公告)号：US20190214506A1

公开(公告)日：2019-07-11

申请号：US15865117

申请日：2018-01-08

Applicant: QUALCOMM Incorporated

Inventor： Plamen Vassilev KOLEV ,  Sinan GOKTEPELI ,  Peter Graeme CLARKE

IPC: H01L29/86 ,  H01L29/06 ,  H01L23/552 ,  H01L23/528 ,  H01L21/02 ,  H01L29/66

Abstract: A resistor may include a semiconductor layer having a source region, a drain region, and a channel region. The channel region may be between the source region and the drain region. The channel region may have a same polarity as the source region and the drain region. The resistor may further include a first inter-metal dielectric (IMD) layer on the channel region. The resistor may further include a front-side gate shield on the first IMD layer. The front-side gate shield may overlap the channel region.