公开(公告)号：US20180315773A1

公开(公告)日：2018-11-01

申请号：US15581254

申请日：2017-04-28

Applicant: QUALCOMM INCORPORATED

Inventor： Ranadeep DUTTA ,  Antonino SCUDERI ,  Wing SY

IPC: H01L27/12 ,  H01L29/78 ,  H01L21/8238 ,  H01L23/66 ,  H03F3/195 ,  H03F3/24 ,  H03F1/22

CPC classification number: H01L27/1203 ,  H01L21/823418 ,  H01L21/823462 ,  H01L27/088 ,  H01L27/0922 ,  H01L27/1237 ,  H01L29/7824 ,  H03F1/223 ,  H03F3/195 ,  H03F3/245 ,  H03F2200/451

Abstract: An amplifier includes a cascode structure comprising a first transistor having first characteristics coupled to a second transistor having second characteristics different than the first characteristics, the first transistor formed with the second transistor on a single diffusion.