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    AMPLIFIERS WITH SHUNT SWITCHES
    4.
    发明申请
    AMPLIFIERS WITH SHUNT SWITCHES 有权
    带分路开关的放大器

    公开(公告)号：US20140113573A1

    公开(公告)日：2014-04-24

    申请号：US13658607

    申请日：2012-10-23

    Applicant: QUALCOMM INCORPORATED

    Inventor： Himanshu Khatri ,  Ojas M. Choksi ,  Wei Zhuo

    IPC: H04B1/44 ,  H03F3/68

    CPC classification number: H03F3/72 ,  H03F1/0277 ,  H03F1/223 ,  H03F3/195 ,  H03F3/211 ,  H03F2200/111 ,  H03F2200/294 ,  H03F2200/429 ,  H03F2203/21109 ,  H03F2203/7209 ,  H03F2203/7215 ,  H03F2203/7236 ,  H03F2203/7239 ,  H03G3/3052

    Abstract: Amplifiers with shunt switches to mitigate interference are disclosed. In an exemplary design, an apparatus includes an amplifier and a shunt switch. The amplifier has an input operatively coupled to an input/output (I/O) pad of an integrated circuit (IC) chip. The shunt switch grounds the amplifier when the shunt switch is closed. The shunt switch is isolated from the I/O pad and the amplifier input. The amplifier may be a low noise amplifier (LNA) or some other type of amplifier. In an exemplary design, the shunt switch is isolated from the I/O pad by a series switch. The series switch and the shunt switch may be closed when the amplifier is disabled and may be opened when the amplifier is enabled.

    Abstract translation: 公开了具有用于减轻干扰的分流开关的放大器。 在示例性设计中，装置包括放大器和分流开关。 放大器具有可操作地耦合到集成电路（IC）芯片的输入/输出（I / O）焊盘的输入。 分流开关闭合时，分流开关接地放大器。 分流开关与I / O焊盘和放大器输入隔离。 放大器可以是低噪声放大器（LNA）或一些其他类型的放大器。 在示例性设计中，分流开关通过串联开关与I / O焊盘隔离。 当放大器禁用时，串联开关和并联开关可能关闭，并且当放大器使能时可以打开。

    Electrostatic discharge protection of amplifier cascode devices
    6.
    发明授权
    Electrostatic discharge protection of amplifier cascode devices 有权
    放大器共源共栅器件的静电放电保护

    公开(公告)号：US09106072B2

    公开(公告)日：2015-08-11

    申请号：US13720836

    申请日：2012-12-19

    Applicant: QUALCOMM Incorporated

    Inventor： Himanshu Khatri ,  Ojas M Choksi ,  Wei Zhuo

    IPC: H03F1/52 ,  H02H9/04 ,  H03F1/22

    CPC classification number: H02H9/043 ,  H03F1/223 ,  H03F1/52 ,  H03F1/523

    Abstract: Exemplary embodiments are directed to providing electrostatic discharge (ESD) protection of a cascode device of an amplifier. In an exemplary embodiment, a transistor is configured to receive a bias voltage and at least one circuit element coupled to the transistor and configured to receive an input voltage via an input pad. Additionally at least one diode can be coupled to a drain of the first transistor and configured to limit a voltage potential at an internal node of the amplifier caused by the input pad.

    Abstract translation: 示例性实施例涉及提供放大器的共射共基器件的静电放电（ESD）保护。 在示例性实施例中，晶体管被配置为接收偏置电压，并且耦合到晶体管的至少一个电路元件被配置为经由输入焊盘接收输入电压。 此外，至少一个二极管可以耦合到第一晶体管的漏极并且被配置为限制由输入焊盘引起的放大器的内部节点处的电压电位。

    ELECTROSTATIC DISCHARGE PROTECTION OF AMPLIFIER CASCODE DEVICES
    7.
    发明申请
    ELECTROSTATIC DISCHARGE PROTECTION OF AMPLIFIER CASCODE DEVICES 有权
    放大器放电器件的静电放电保护

    公开(公告)号：US20140167862A1

    公开(公告)日：2014-06-19

    申请号：US13720836

    申请日：2012-12-19

    Applicant: QUALCOMM INCORPORATED

    Inventor： Himanshu Khatri ,  Ojas M. Choksi ,  Wei Zhuo

    IPC: H02H9/04 ,  H03F1/52

    CPC classification number: H02H9/043 ,  H03F1/223 ,  H03F1/52 ,  H03F1/523

    Abstract: Exemplary embodiments are directed to providing electrostatic discharge (ESD) protection of a cascode device of an amplifier. In an exemplary embodiment, a transistor is configured to receive a bias voltage and at least one circuit element coupled to the transistor and configured to receive an input voltage via an input pad. Additionally at least one diode can be coupled to a drain of the first transistor and configured to limit a voltage potential at an internal node of the amplifier caused by the input pad.

    Abstract translation: 示例性实施例涉及提供放大器的共射共基器件的静电放电（ESD）保护。 在示例性实施例中，晶体管被配置为接收偏置电压，并且耦合到晶体管的至少一个电路元件被配置为经由输入焊盘接收输入电压。 此外，至少一个二极管可以耦合到第一晶体管的漏极并且被配置为限制由输入焊盘引起的放大器的内部节点处的电压电位。

    THRESHOLD TRACKING BIAS VOLTAGE FOR MIXERS
    8.
    发明申请
    THRESHOLD TRACKING BIAS VOLTAGE FOR MIXERS 有权
    混合器的阈值跟踪偏置电压

    公开(公告)号：US20140111252A1

    公开(公告)日：2014-04-24

    申请号：US13659700

    申请日：2012-10-24

    Applicant: QUALCOMM INCORPORATED

    Inventor： Wei Zhuo ,  Himanshu Khatri ,  Ojas M Choksi

    IPC: H03K17/06

    CPC classification number: H03D7/12 ,  H03F1/301

    Abstract: Bias voltage generators that can generate variable bias voltages for transistors in mixers and other circuits are disclosed. In an exemplary design, an apparatus (e.g., a wireless device or an integrated circuit (IC)) includes at least one transistor and a bias voltage generator. The transistor(s) have a threshold voltage and receive a bias voltage. The bias voltage generator generates the bias voltage based on changes to the threshold voltage of the transistor(s), e.g., due to IC process and/or temperature. In an exemplary design, the bias voltage generator includes a replica transistor that tracks the transistor(s) and an op-amp that provides a gate voltage for the replica transistor. The bias voltage is generated based on the gate voltage. The bias voltage generator may generate the bias voltage (i) to track the threshold voltage of the transistor(s) in a first mode or (ii) based on a fixed voltage in a second mode.

    Abstract translation: 公开了可以在混合器和其他电路中为晶体管产生可变偏压的偏压电压发生器。 在示例性设计中，装置（例如，无线装置或集成电路（IC））包括至少一个晶体管和偏置电压发生器。 晶体管具有阈值电压并接收偏置电压。 偏置电压发生器基于对晶体管的阈值电压的变化产生偏置电压，例如由于IC工艺和/或温度而产生偏置电压。 在示例性设计中，偏置电压发生器包括跟踪晶体管的复制晶体管和为复制晶体管提供栅极电压的运算放大器。 基于栅极电压产生偏置电压。 偏置电压发生器可以产生偏置电压（i）以在第一模式中跟踪晶体管的阈值电压，或者（ii）基于第二模式中的固定电压。

    RADIO FREQUENCY INTEGRATED CIRCUIT (RFIC) CHARGED-DEVICE MODEL (CDM) PROTECTION
    10.
    发明申请
    RADIO FREQUENCY INTEGRATED CIRCUIT (RFIC) CHARGED-DEVICE MODEL (CDM) PROTECTION 审中-公开
    无线电频率集成电路（RFIC）充电器模型（CDM）保护

    公开(公告)号：US20140268446A1

    公开(公告)日：2014-09-18

    申请号：US13840593

    申请日：2013-03-15

    Applicant: QUALCOMM INCORPORATED

    Inventor： Prasad Srinivasa Siva Gudem ,  Himanshu Khatri ,  Devavrata V. Godbole ,  Eugene Robert Worley

    IPC: H02H9/04

    CPC classification number: H02H9/041

    Abstract: An apparatus is described. The apparatus includes an input device. The apparatus also includes a positive supply voltage pad. The apparatus further includes an input signal pad. The apparatus also includes a ground pad. The apparatus further includes charged-device model protection circuitry that protects the input device from electrostatic discharge. The charged-device model protection circuitry includes at least one of de-Q circuitry and a cascode device.

    Abstract translation: 描述了一种装置。 该装置包括输入装置。 该装置还包括正电源电压垫。 该装置还包括输入信号垫。 该装置还包括接地垫。 该装置还包括保护输入装置免受静电放电的充电装置型号保护电路。 充电设备型号保护电路包括去Q电路和共源共用器件中的至少一个。

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