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    Metal-semiconductor wafer bonding for high-Q devices
    1.
    发明授权
    Metal-semiconductor wafer bonding for high-Q devices 有权
    用于高Q器件的金属半导体晶片接合

    公开(公告)号：US09431510B2

    公开(公告)日：2016-08-30

    申请号：US14554718

    申请日：2014-11-26

    Applicant: QUALCOMM Incorporated

    Inventor： Changhan Yun ,  Chengjie Zuo ,  Chi Shun Lo ,  Jonghae Kim ,  Mario F. Velez

    IPC: H01L21/20 ,  H01L29/66 ,  H01G4/33 ,  H01L49/02 ,  H01G4/12

    CPC classification number: H01L29/66174 ,  H01G4/1272 ,  H01G4/33 ,  H01L28/40 ,  H01L28/75

    Abstract: Methods and apparatus for metal semiconductor wafer bonding for high-Q devices are provided. An exemplary capacitor includes a first plate formed on a glass substrate, a second plate, and a dielectric layer. No organic bonding agent is used between the first plate and the glass substrate, and the dielectric layer can be an intrinsic semiconductor. A extrinsic semiconductor layer that is heavily doped contacts the dielectric layer. The dielectric and extrinsic semiconductor layers are sandwiched between the first and second plates. An intermetallic layer is formed between the first plate and the dielectric layer. The intermetallic layer is thermo compression bonded to the first plate and the dielectric layer. The capacitor can be coupled in a circuit as a high-Q capacitor and/or a varactor, and can be integrated with a mobile device.

    Abstract translation: 提供了用于高Q装置的金属半导体晶片接合的方法和装置。 示例性电容器包括形成在玻璃基板，第二板和介电层上的第一板。 在第一板和玻璃基板之间不使用有机粘合剂，并且电介质层可以是本征半导体。 重掺杂的非本征半导体层接触电介质层。 电介质和非本征半导体层夹在第一和第二板之间。 在第一板和电介质层之间形成金属间层。 金属间化合物层被热压接合到第一板和电介质层。 电容器可以作为高Q电容器和/或变容二极管耦合在电路中，并且可以与移动设备集成。

    RADIO FREQUENCY SWITCH FOR DIVERSITY RECEIVER
    4.
    发明申请
    RADIO FREQUENCY SWITCH FOR DIVERSITY RECEIVER 有权
    无线电频率开关用于多样性接收机

    公开(公告)号：US20150215026A1

    公开(公告)日：2015-07-30

    申请号：US14684072

    申请日：2015-04-10

    Applicant: QUALCOMM Incorporated

    Inventor： Chengjie Zuo ,  Changhan Hobie Yun ,  Chi Shun Lo ,  Mario Francisco Velez ,  Jonghae Kim

    IPC: H04B7/08 ,  H04B1/18

    CPC classification number: H04B7/0805 ,  H04B1/005 ,  H04B1/16 ,  H04B1/18 ,  H04B7/0825

    Abstract: A diversity receiver switch includes at least one second stage switch configured to communicate with a transceiver. The diversity receiver switch may also include at least one first stage switch coupled between a diversity receiver antenna and the second stage switch(es). The first stage switch(es) may be configured to handle a different amount of power than the second stage switch(es). The diversity receiver switch may include a bank of second stage switches configured to communicate with a transceiver. A first stage switch may be configured to handle more power than each switch in the bank of second stage switches. Alternatively, the diversity receiver switch include a bank of first stage switches coupled between the diversity receiver antenna and a second stage switch. The second stage switch may be configured to handle more power than each of the first stage switches.

    Abstract translation: 分集接收机交换机包括被配置为与收发机通信的至少一个第二级交换机。 分集接收机交换机还可以包括耦合在分集接收机天线和第二级交换机之间的至少一个第一级交换机。 第一级开关可以被配置为处理与第二级开关不同的功率量。 分集接收器开关可以包括被配置为与收发器通信的一组第二级交换机。 第一级开关可以被配置为处理比第二级开关组中的每个开关更多的功率。 或者，分集接收器开关包括耦合在分集接收器天线和第二级开关之间的一组第一级开关。 第二级开关可以被配置为处理比每个第一级开关更多的功率。

    Hybrid transformer structure on semiconductor devices
    5.
    发明授权
    Hybrid transformer structure on semiconductor devices 有权
    半导体器件上的混合变压器结构

    公开(公告)号：US09431473B2

    公开(公告)日：2016-08-30

    申请号：US13684103

    申请日：2012-11-21

    Applicant: Qualcomm Incorporated

    Inventor： Chi Shun Lo ,  Je-Hsiung Lan ,  Mario Francisco Velez ,  Jonghae Kim

    IPC: H01L27/08 ,  H01L21/337 ,  H01F27/30 ,  H01L49/02 ,  H01F21/00 ,  H01F19/04 ,  H01L23/522 ,  H01L23/64 ,  H01F19/08 ,  H01F27/28

    CPC classification number: H01L28/10 ,  H01F19/04 ,  H01F21/00 ,  H01F2019/085 ,  H01F2027/2809 ,  H01L21/00 ,  H01L23/5227 ,  H01L23/645 ,  H01L2924/0002 ,  Y10T29/41 ,  H01L2924/00

    Abstract: Several novel features pertain to a hybrid transformer formed within a semiconductor die having multiple layers. The hybrid transformer includes a first set of windings positioned on a first layer of the die. The first layer is positioned above a substrate of the die. The first set of windings includes a first port and a second port. The first set of windings is arranged to operate as a first inductor. The hybrid transformer includes a second set of windings positioned on a second layer of the die. The second layer is positioned above the substrate. The second set of windings includes a third port, a fourth port and a fifth port. The second set of windings is arranged to operate as a second inductor and a third inductor. The first set of windings and the second set of windings are arranged to operate as a vertical coupling hybrid transformer.

    Abstract translation: 几种新颖的特征涉及形成在具有多层的半导体管芯内的混合变压器。 混合变压器包括位于模具的第一层上的第一组绕组。 第一层位于模具的基底之上。 第一组绕组包括第一端口和第二端口。 第一组绕组被布置成作为第一电感器工作。 混合变压器包括位于模具的第二层上的第二组绕组。 第二层位于衬底上方。 第二组绕组包括第三端口，第四端口和第五端口。 第二组绕组被布置成用作第二电感器和第三电感器。 第一组绕组和第二组绕组被布置成作为垂直耦合混合变压器工作。

    HYBRID TRANSFORMER STRUCTURE ON SEMICONDUCTOR DEVICES
    7.
    发明申请
    HYBRID TRANSFORMER STRUCTURE ON SEMICONDUCTOR DEVICES 有权
    半导体器件的混合变压器结构

    公开(公告)号：US20140138792A1

    公开(公告)日：2014-05-22

    申请号：US13684103

    申请日：2012-11-21

    Applicant: QUALCOMM INCORPORATED

    Inventor： Chi Shun Lo ,  Je-Hsiung Lan ,  Mario Francisco Velez ,  Jonghae Kim

    IPC: H01L49/02 ,  H01L21/00

    CPC classification number: H01L28/10 ,  H01F19/04 ,  H01F21/00 ,  H01F2019/085 ,  H01F2027/2809 ,  H01L21/00 ,  H01L23/5227 ,  H01L23/645 ,  H01L2924/0002 ,  Y10T29/41 ,  H01L2924/00

    Abstract: Several novel features pertain to a hybrid transformer formed within a semiconductor die having multiple layers. The hybrid transformer includes a first set of windings positioned on a first layer of the die. The first layer is positioned above a substrate of the die. The first set of windings includes a first port and a second port. The first set of windings is arranged to operate as a first inductor. The hybrid transformer includes a second set of windings positioned on a second layer of the die. The second layer is positioned above the substrate. The second set of windings includes a third port, a fourth port and a fifth port. The second set of windings is arranged to operate as a second inductor and a third inductor. The first set of windings and the second set of windings are arranged to operate as a vertical coupling hybrid transformer.

    Abstract translation: 几种新颖的特征涉及形成在具有多层的半导体管芯内的混合变压器。 混合变压器包括位于模具的第一层上的第一组绕组。 第一层位于模具的基底之上。 第一组绕组包括第一端口和第二端口。 第一组绕组被布置成作为第一电感器工作。 混合变压器包括位于模具的第二层上的第二组绕组。 第二层位于衬底上方。 第二组绕组包括第三端口，第四端口和第五端口。 第二组绕组被布置成用作第二电感器和第三电感器。 第一组绕组和第二组绕组被布置成作为垂直耦合混合变压器工作。

    MULTI-MODE BANDPASS FILTER
    9.
    发明申请
    MULTI-MODE BANDPASS FILTER 审中-公开
    多模式滤波器

    公开(公告)号：US20140055214A1

    公开(公告)日：2014-02-27

    申请号：US13765669

    申请日：2013-02-12

    Applicant: QUALCOMM INCORPORATED

    Inventor： Sanghoon Joo ,  Chi Shun Lo ,  Chengjie Zuo ,  Changhan Hobie Yun ,  Jonghae Kim

    IPC: H03H9/70 ,  H03H9/54

    CPC classification number: H03H9/54 ,  H03H9/02062 ,  H03H9/02157 ,  H03H9/02259 ,  H03H9/462 ,  H03H9/525 ,  H03H9/568 ,  H03H9/70 ,  H03H2009/02291 ,  H03H2009/02527

    Abstract: A multi-mode bandpass filter is described. The bandpass filter includes a first multi-directional vibrating microelectromechanical systems resonator. The bandpass filter also includes a second multi-directional vibrating microelectromechanical systems resonator. The first multi-directional vibrating microelectromechanical systems resonator is in a parallel configuration. The second multi-directional vibrating microelectromechanical systems resonator is in a series configuration.

    Abstract translation: 描述了多模式带通滤波器。 带通滤波器包括第一多向振动微机电系统谐振器。 带通滤波器还包括第二多向振动微机电系统谐振器。 第一多向振动微机电系统谐振器处于并联配置。 第二多向振动微机电系统谐振器是串联配置。

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