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公开(公告)号：US20190189858A1
公开(公告)日：2019-06-20
申请号：US16283834
申请日：2019-02-25
Applicant: PlayNitride Inc.
Inventor： Yun-Li Li , Yu-Hung Lai , Tzu-Yang Lin
CPC classification number: H01L33/465 , G02B5/085 , G02B5/288 , H01L25/0753 , H01L33/08 , H01L33/10 , H01L33/382 , H01L33/60 , H01L33/62 , H01L2933/0016
Abstract: A display device including a backplane, a plurality of light-emitting devices, a first distributed Bragg reflector layer and a second distributed Bragg reflector layer is provided. The light-emitting devices are disposed on the backplane. The first distributed Bragg reflector layer is disposed between the backplane and the light-emitting devices. The light-emitting devices are disposed between the first distributed Bragg reflector layer and the second distributed Bragg reflector layer. A projected area of the first distributed Bragg reflector layer on the backplane is larger than a projected area of one of the light-emitting devices on the backplane or a projected area of the second distributed Bragg reflector layer on the backplane is larger than a projected area of one light-emitting device on the backplane.
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公开(公告)号：US20180294387A1
公开(公告)日：2018-10-11
申请号：US15612839
申请日：2017-06-02
Applicant: PlayNitride Inc.
Inventor： Yun-Li Li , Tzu-Yang Lin , Yu-Hung Lai , Pei-Hsin Chen
CPC classification number: H01L25/0753 , H01L24/27 , H01L24/29 , H01L24/30 , H01L24/32 , H01L24/83 , H01L2224/27002 , H01L2224/27003 , H01L2224/29006 , H01L2224/2908 , H01L2224/291 , H01L2224/29109 , H01L2224/29111 , H01L2224/29116 , H01L2224/29118 , H01L2224/2919 , H01L2224/30181 , H01L2224/30505 , H01L2224/32013 , H01L2224/32145 , H01L2224/32225 , H01L2224/83005 , H01L2224/83097 , H01L2224/83191 , H01L2224/83192 , H01L2924/12041 , H01L2924/37001 , H01L2924/01083 , H01L2924/0105
Abstract: A method of transferring micro devices is provided. A carrier substrate including a buffer layer and a plurality of micro devices is provided. The buffer layer is located between the carrier substrate and the micro devices. The micro devices are separated from one another and positioned on the carrier substrate through the buffer layer. A receiving substrate contacts the micro devices disposed on the carrier substrate. A temperature of at least one of the carrier substrate and the receiving substrate is changed, so that at least a portion of the micro devices are released from the carrier substrate and transferred onto the receiving substrate. A number of the at least a portion of the micro devices is between 1000 and 2000000.
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公开(公告)号：US10090449B2
公开(公告)日：2018-10-02
申请号：US15712145
申请日：2017-09-22
Applicant: PlayNitride Inc.
Inventor： Shao-Hua Huang , Yun-Li Li
Abstract: A light emitting device of the invention includes a substrate, an electrode connection layer, and at least one epitaxial structure. The substrate has an upper surface and a plurality of electrode pads disposed on the upper surface. The electrode connection layer is disposed on the upper surface of the substrate and electrically connected to the plurality of electrode pads. The electrode connection layer has at least one first electrode, at least one second electrode and at least one connection layer disposed between the substrate and the at least one first electrode and disposed between the substrate and the at least one second electrode. The at least one connection layer has at least one buffer region exposed on the upper surface of the substrate and being an empty gap. The at least one epitaxial structure is disposed on and electrically connected to the electrode connection layer.
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公开(公告)号：US20180166606A1
公开(公告)日：2018-06-14
申请号：US15424544
申请日：2017-02-03
Applicant: PlayNitride Inc.
Inventor： Tzu-Yang Lin , Yu-Hung Lai , Yun-Li Li , Yu-Yun Lo
IPC: H01L33/20 , H01L33/38 , H01L25/075
CPC classification number: H01L33/20 , H01L25/0753 , H01L33/382
Abstract: A light emitting diode (LED) chip has an inclined notch. The inclined notch has at least one inclined surface. The LED chip includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, a light emitting layer, a first electrode, and a second electrode. The light emitting layer is located between the first-type doped semiconductor layer and the second-type doped semiconductor layer. The inclined surface is inclined with respect to the light emitting layer. The first electrode is electrically connected to the first-type doped semiconductor layer. The second electrode is electrically connected to the second-type doped semiconductor layer. The inclined notch is disposed in the light emitting layer.
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公开(公告)号：US09620678B2
公开(公告)日：2017-04-11
申请号：US14922213
申请日：2015-10-26
Applicant: PlayNitride Inc.
Inventor： Shao-Hua Huang , Yun-Li Li
Abstract: An electrode structure of a light emitting device includes a plurality of first electrodes and a plurality of second electrodes. The first electrodes electrically contact with the light emitting device and are separated from one other. The second electrodes electrically contact with the light emitting device and are located at the same side with the first electrodes. The second electrodes are separated from one other, and the second electrodes have at least two different profiles when viewing from atop.
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Patent Agency Ranking
公开(公告)号：US20160141468A1
公开(公告)日：2016-05-19
申请号：US14924727
申请日：2015-10-28
Applicant: PlayNitride Inc.
Inventor： Yun-Li Li , Po-Jen Su , Hsuan-Wei Mai
CPC classification number: H01L33/505 , B29C39/025 , B29K2995/00 , B29K2995/0018 , B29L2011/00 , H01L2933/0041 , H01L2933/0091
Abstract: A method for manufacturing a wavelength converting film is provided. A release film is provided. At a least one coating process is performed to form at least one wavelength converting layer on the release film, wherein a first contact surface of the at least one wavelength converting layer and the release film has a first roughness. An adhesive layer is formed on a surface of the wavelength converting layer farthest from the release film, wherein a second contact surface of the adhesive layer and the wavelength converting layer has a second roughness. The second roughness is greater than the first roughness.
Abstract translation: 提供了制造波长转换膜的方法。 提供剥离膜。 在至少一个涂覆方法上进行以在剥离膜上形成至少一个波长转换层，其中至少一个波长转换层和剥离膜的第一接触表面具有第一粗糙度。 在距离离型膜最远的波长转换层的表面上形成粘合剂层，其中粘合剂层和波长转换层的第二接触表面具有第二粗糙度。 第二粗糙度大于第一粗糙度。
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公开(公告)号：US20160005935A1
公开(公告)日：2016-01-07
申请号：US14740283
申请日：2015-06-16
Applicant: PlayNitride Inc.
Inventor： Kuan-Yung Liao , Yun-Li Li , Chih-Ling Wu , Yen-Lin Lai
CPC classification number: H01L33/508 , H01L21/02488 , H01L21/02494 , H01L21/02502 , H01L33/007 , H01L33/08 , H01L33/502
Abstract: An epitaxy base adapted to form a light-emitting device thereon is provided. The epitaxy base includes a substrate and a patterned wavelength conversion structure disposed on a part of the substrate and protruding out from the substrate. A light-emitting device including the epitaxy base, a first type semiconductor layer, an emitting layer and a second type semiconductor layer is provided. The first type semiconductor layer is disposed on the substrate and the patterned wavelength conversion structure. The emitting layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the emitting layer.
Abstract translation: 提供了适于在其上形成发光器件的外延基底。 外延基底包括衬底和布置在衬底的一部分上且从衬底突出的图案化波长转换结构。 提供了包括外延基底，第一类型半导体层，发光层和第二类型半导体层的发光器件。 第一类型半导体层设置在衬底和图案化的波长转换结构上。 发光层设置在第一类型半导体层上。 第二类型半导体层设置在发光层上。
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公开(公告)号：US11705440B2
公开(公告)日：2023-07-18
申请号：US17224053
申请日：2021-04-06
Applicant: PlayNitride Inc.
Inventor： Kuan-Yung Liao , Ching-Liang Lin , Yun-Li Li , Yu-Chu Li
IPC: H01L25/07 , H01L25/075 , H01L33/62 , H01L25/16
CPC classification number: H01L25/0753 , H01L25/167 , H01L33/62
Abstract: A micro LED display panel includes a driving substrate and a plurality of micro light emitting diodes (LEDs). The driving substrate has a plurality of pixel regions. Each of the pixel regions includes a plurality of sub-pixel regions. The micro LEDs are located on the driving substrate. At least one of the sub-pixel regions is provided with two micro LEDs of the micro LEDs electrically connected in series, and a dominant wavelength of the two micro LEDs is within a wavelength range of a specific color light. In a repaired sub-pixel region of the sub-pixel regions, only one of the two micro LEDs emits light. In a normal sub-pixel region of the sub-pixel regions, both of the two micro LEDs emit light.
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公开(公告)号：US20190288245A1
公开(公告)日：2019-09-19
申请号：US16431744
申请日：2019-06-05
Applicant: PlayNitride Inc.
Inventor： Yu-Hung Lai , Yun-Li Li , Tzu-Yang Lin
IPC: H01L51/56 , H01L21/66 , H01L23/00 , H01L21/52 , H01L25/075
Abstract: A display including a back plate, a plurality of light emitting devices and a plurality of compensating light emitting devices is provided. The back plate has a plurality of pixels and at least one compensated region. The compensated region includes some of the pixels. The light emitting devices are arranged in all the pixels on the back plate. The compensated light emitting devices are disposed on the back plate and located in each pixel in the compensated region respectively. At least one of the pixels in the compensated region is dead pixel. Besides, a repair method of the display is also provided.
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公开(公告)号：US10125950B2
公开(公告)日：2018-11-13
申请号：US14967396
申请日：2015-12-14
Applicant: PlayNitride Inc.
Inventor： Kuan-Yung Liao , Yun-Li Li , Gwo-Jiun Sheu , Sheng-Yuan Sun , Po-Jen Su , Jun-Yu Lin
IPC: F21V7/04 , F21V9/30 , F21K9/64 , F21Y115/30 , F21Y113/20 , F21Y115/10
Abstract: An optical module including a reflecting component, a plurality of first light sources and a wavelength conversion body is provided. The reflecting component has a main axis and a focal point located on the main axis. The first light sources are located at one side of the reflecting component and each of the first light sources emits a first light parallel to the main axis towards the reflecting component. The wavelength conversion body is disposed on the focal point, wherein the first lights are reflected to the focal point via the reflecting component and a part of the first lights are converted to a second light via the wavelength conversion body. The second light and another part of the first lights are projected to the reflecting component and form a light beam parallel to the main axis via reflection by the reflecting component.
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