MICRO LED DISPLAY PANEL
    2.
    发明申请

    公开(公告)号:US20210225817A1

    公开(公告)日:2021-07-22

    申请号:US17224053

    申请日:2021-04-06

    申请人: PlayNitride Inc.

    摘要: A micro LED display panel includes a driving substrate and a plurality of micro light emitting diodes (LEDs). The driving substrate has a plurality of pixel regions. Each of the pixel regions includes a plurality of sub-pixel regions. The micro LEDs are located on the driving substrate. At least one of the sub-pixel regions is provided with two micro LEDs of the micro LEDs electrically connected in series, and a dominant wavelength of the two micro LEDs is within a wavelength range of a specific color light. In a repaired sub-pixel region of the sub-pixel regions, only one of the two micro LEDs emits light. In a normal sub-pixel region of the sub-pixel regions, both of the two micro LEDs emit light.

    SEMICONDUCTOR LIGHT EMITTING DEVICE

    公开(公告)号:US20170141262A1

    公开(公告)日:2017-05-18

    申请号:US15175789

    申请日:2016-06-07

    申请人: PlayNitride Inc.

    IPC分类号: H01L33/12 H01L33/32 H01L33/04

    摘要: A semiconductor light emitting device including an N-type semiconductor layer, a P-type semiconductor layer, a light emitting layer and a strain relief layer is provided. The light emitting layer is disposed between the N-type semiconductor layer and the P-type semiconductor layer, and the light emitting layer is a multiple quantum well structure. The strain relief layer is disposed between the light emitting layer and the N-type semiconductor layer, and is made of InxGa1-xN, where 0

    Display panel and repairing method therefor

    公开(公告)号:US10763302B2

    公开(公告)日:2020-09-01

    申请号:US16192623

    申请日:2018-11-15

    申请人: PLAYNITRIDE INC.

    摘要: A display panel and a repairing method thereof. The display panel includes micro LEDs and a circuit substrate. The circuit substrate includes first wires, second wires and connecting circuits. Respective one of the connecting circuits is configured to be electrically connected to respective one of the micro LEDs. Each of the connecting circuits includes a first pad, a second pad, a third pad and a connecting wire. The first pad is configured to be electrically connected to the corresponding micro LED and one of the first wires. The first and second pads are separated by a first gap. The second pad is configured to be electrically connected to one of the second wires. The second and third pads are separated by a second gap. The connecting wire is connected to the second pad and the third pad.

    Micro LED display panel
    6.
    发明授权

    公开(公告)号:US11705440B2

    公开(公告)日:2023-07-18

    申请号:US17224053

    申请日:2021-04-06

    申请人: PlayNitride Inc.

    摘要: A micro LED display panel includes a driving substrate and a plurality of micro light emitting diodes (LEDs). The driving substrate has a plurality of pixel regions. Each of the pixel regions includes a plurality of sub-pixel regions. The micro LEDs are located on the driving substrate. At least one of the sub-pixel regions is provided with two micro LEDs of the micro LEDs electrically connected in series, and a dominant wavelength of the two micro LEDs is within a wavelength range of a specific color light. In a repaired sub-pixel region of the sub-pixel regions, only one of the two micro LEDs emits light. In a normal sub-pixel region of the sub-pixel regions, both of the two micro LEDs emit light.

    SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
    8.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
    半导体发光器件及其制造方法

    公开(公告)号:US20160181469A1

    公开(公告)日:2016-06-23

    申请号:US14941681

    申请日:2015-11-16

    申请人: PlayNitride Inc.

    IPC分类号: H01L33/00 H01L33/32 H01L33/12

    摘要: A semiconductor light-emitting device including a first N-type semiconductor layer, a P-type semiconductor layer, and a light-emitting layer is provided. The first N-type semiconductor layer contains aluminum, and the concentration of the N-type dopant thereof is greater than or equal to 5×1018 atoms/cm3. The light-emitting layer is disposed between the first N-type semiconductor layer and the P-type semiconductor layer. A manufacturing method of a semiconductor light-emitting device is also provided.

    摘要翻译: 提供了包括第一N型半导体层,P型半导体层和发光层的半导体发光器件。 第一N型半导体层含有铝,其N型掺杂剂的浓度大于或等于5×1018原子/ cm3。 发光层设置在第一N型半导体层和P型半导体层之间。 还提供了一种半导体发光器件的制造方法。

    MICRO LED DISPLAY PANEL
    9.
    发明申请

    公开(公告)号:US20180374828A1

    公开(公告)日:2018-12-27

    申请号:US16018080

    申请日:2018-06-26

    申请人: PlayNitride Inc.

    摘要: A display panel includes a driving substrate and a plurality of micro light emitting diodes (LEDs). The driving substrate has a plurality of pixel regions. The micro LEDs are located on the driving substrate and arranged apart from each other. The micro LEDs at least includes a plurality of first micro LEDs and a plurality of second micro LEDs. Each of the pixel regions is at least provided with one first micro LED and one second micro LED, and the first micro LED and the second micro LED are electrically connected in series.