公开(公告)号：US11705440B2

公开(公告)日：2023-07-18

申请号：US17224053

申请日：2021-04-06

申请人： PlayNitride Inc.

发明人： Kuan-Yung Liao ,  Ching-Liang Lin ,  Yun-Li Li ,  Yu-Chu Li

IPC分类号： H01L25/07 ,  H01L25/075 ,  H01L33/62 ,  H01L25/16

CPC分类号： H01L25/0753 ,  H01L25/167 ,  H01L33/62

摘要： A micro LED display panel includes a driving substrate and a plurality of micro light emitting diodes (LEDs). The driving substrate has a plurality of pixel regions. Each of the pixel regions includes a plurality of sub-pixel regions. The micro LEDs are located on the driving substrate. At least one of the sub-pixel regions is provided with two micro LEDs of the micro LEDs electrically connected in series, and a dominant wavelength of the two micro LEDs is within a wavelength range of a specific color light. In a repaired sub-pixel region of the sub-pixel regions, only one of the two micro LEDs emits light. In a normal sub-pixel region of the sub-pixel regions, both of the two micro LEDs emit light.

公开(公告)号：US11616050B2

公开(公告)日：2023-03-28

申请号：US17356538

申请日：2021-06-24

申请人： PlayNitride Inc.

发明人： Yu-Yun Lo ,  Tzu-Yang Lin ,  Yu-Hung Lai

IPC分类号： H01L25/075 ,  H01L33/62 ,  H01L25/00 ,  H01L33/00 ,  H01L33/38 ,  H01L33/44

摘要： A method for manufacturing a micro light emitting diode device is provided. A plurality of first type epitaxial structures are formed on a first substrate and the first type epitaxial structures are separated from each other. A first connection layer and a first adhesive layer are configured between the first type epitaxial structures and the first substrate. The first connection layer is connected to the first type epitaxial structures. The first adhesive layer is located between the first connection layer and the first type epitaxial substrate. The Young's modulus of the first connection layer is larger than the Young's modulus of the first adhesive layer. The first connection layer located between any two adjacent first type epitaxial structures is removed so as to form a plurality of first connection portions separated from each other. Each of the first connection portions is connected to the corresponding first type epitaxial structure.

公开(公告)号：US11257987B2

公开(公告)日：2022-02-22

申请号：US15953509

申请日：2018-04-16

申请人： PlayNitride Inc.

发明人： Yu-Yun Lo ,  Chih-Ling Wu ,  Yi-Min Su

IPC分类号： H01L21/677 ,  H01L33/48 ,  H01L25/075 ,  H01L33/00

摘要： A structure with micro light-emitting device includes a substrate, at least one micro light-emitting device, a holding structure, and at least one buffer structure. The micro light-emitting device is disposed on the substrate, and there is a vertical distance between the micro light-emitting device and the substrate. The holding structure is disposed on the substrate and directly contacts the micro light-emitting device. The buffer structure directly contacts the holding structure. Here, a Young's modulus of the buffer structure is smaller than a Young's modulus of the holding structure.

公开(公告)号：US10832610B2

公开(公告)日：2020-11-10

申请号：US16388628

申请日：2019-04-18

申请人： PLAYNITRIDE INC.

发明人： Pei-Hsin Chen ,  Yi-Ching Chen ,  Yi-Chun Shih ,  Yu-Chu Li ,  Ying-Tsang Liu

IPC分类号： H01L27/15 ,  G09G3/20 ,  G09G3/32 ,  G06F3/041

摘要： A display panel of micro light emitting diode comprises a substrate, a plurality of micro light emitting diodes, a plurality of driving chips and a shading layer. The substrate having a first surface and a display area. The plurality of micro light emitting diodes is disposed on the first surface of the substrate and is located in the display area, with each of the micro light emitting diodes having a light emitting surface while the light emitting surface is away from the first surface of the substrate. The plurality of driving chips is disposed on the first surface of the substrate and is located in the display area, with each driving chip electrically connecting to at least one of the micro light emitting diodes. The shading layer is disposed on the first surface of the substrate and covering the driving chips while exposing the light emitting surfaces.

公开(公告)号：US20200350466A1

公开(公告)日：2020-11-05

申请号：US16935163

申请日：2020-07-21

申请人： PlayNitride Inc.

发明人： Yu-Hung Lai ,  Yu-Yun Lo ,  Tzu-Yang Lin

IPC分类号： H01L33/06 ,  H01L27/146 ,  C30B25/18 ,  G09G3/32 ,  H01L25/075 ,  H01L27/12 ,  C30B29/40 ,  H01L27/15

摘要： A micro light emitting diode chip having a plurality of light-emitting regions, including a semiconductor epitaxial structure, a first electrode and a plurality of second electrodes disposed at interval is provided. The semiconductor epitaxial structure includes a first-type doped semiconductor layer, a plurality of second-type doped semiconductor layers and a plurality of light-emitting layers disposed at interval. The light-emitting layers are located between the first-type doped semiconductor layer and the second-type doped semiconductor layer. The light-emitting layers are located in the light-emitting regions respectively and electrically contact to the first-type doped semiconductor layer. The first electrode is electrically connected and contacts to the first-type doped semiconductor layers. The second electrodes are electrically connected to the second-type doped semiconductor layers. Furthermore, a display panel is also provided.

公开(公告)号：US10763393B2

公开(公告)日：2020-09-01

申请号：US15866473

申请日：2018-01-10

申请人： PlayNitride Inc.

发明人： Yu-Hung Lai ,  Yu-Yun Lo ,  Tzu-Yang Lin

IPC分类号： H01L33/06 ,  H01L27/146 ,  C30B25/18 ,  G09G3/32 ,  H01L25/075 ,  H01L27/12 ,  C30B29/40 ,  H01L27/15 ,  H01L33/08 ,  H01L25/16 ,  H01L33/38

摘要： A micro light emitting diode chip having a plurality of light-emitting regions, including a semiconductor epitaxial structure, a first electrode and a plurality of second electrodes disposed at interval is provided. The semiconductor epitaxial structure includes a first-type doped semiconductor layer, a plurality of second-type doped semiconductor layers and a plurality of light-emitting layers disposed at interval. The light-emitting layers are located between the first-type doped semiconductor layer and the second-type doped semiconductor layer. The light-emitting layers are located in the light-emitting regions respectively and electrically contact to the first-type doped semiconductor layer. The first electrode is electrically connected and contacts to the first-type doped semiconductor layers. The second electrodes are electrically connected to the second-type doped semiconductor layers. Furthermore, a display panel is also provided.

公开(公告)号：US20200091370A1

公开(公告)日：2020-03-19

申请号：US16541055

申请日：2019-08-14

申请人： PLAYNITRIDE INC.

发明人： Tzu-Yu TING ,  Yu-Hung LAI ,  Hsiang-Wen TANG ,  Yi-Chun SHIH

IPC分类号： H01L33/00 ,  H01L27/15 ,  G09F9/33

摘要： A method of manufacturing display device is disclosed. a substrate includes a basal layer and metal contacts on the top surface. An insulation layer is disposed on the top surface and includes a first mounting surface and a bottom surface. Multiple grooves are formed on the insulation layer and each extends from the first mounting surface to the bottom surface. The grooves respectively correspond to the metal contacts and expose respective metal contacts. An electromagnetic force is provided with a direction from the basal layer toward the insulation layer. A droplet containing multiple micro components is provided on the first mounting surface. A configuration of an electrode of the micro component corresponds to a configuration of one of the grooves. The electrode is attracted to the corresponding groove by the electromagnetic force so as to electrically contact the metal contact.

公开(公告)号：US10593658B2

公开(公告)日：2020-03-17

申请号：US16199253

申请日：2018-11-26

申请人： PlayNitride Inc.

发明人： Tzu-Yang Lin ,  Yu-Hung Lai ,  Yu-Yun Lo

IPC分类号： H01L29/205 ,  H01L33/00 ,  H01L25/16 ,  H01L25/075 ,  H01L33/38 ,  H01L33/62 ,  H01L33/44 ,  H01L33/58 ,  H01L23/00 ,  H01L33/48 ,  H01L27/12 ,  H01L33/20

摘要： A method of forming a light emitting device is provided. A carrier with a plurality of buffer pads and a plurality of light emitting diode chips is provided, wherein the buffer pads are disposed between the carrier and the light emitting diode chips and are with Young's modulus of 2˜10 GPa. The carrier is positioned over a receiving substrate. A thermal bonding process is performed to electrically connect the light emitting diode chips to the receiving substrate, and wherein the buffer pads and the receiving substrate are located at opposite sides of each light emitting diode chip.

公开(公告)号：US10580825B2

公开(公告)日：2020-03-03

申请号：US16230629

申请日：2018-12-21

申请人： PLAYNITRIDE INC.

发明人： Yu-Hung Lai

IPC分类号： H01L27/15 ,  H01L27/32 ,  H01L25/075 ,  H01L21/66 ,  H01L33/08 ,  H01L33/02 ,  H01L33/14 ,  H01L33/22

摘要： Disclosed are a method of manufacturing display device, an epitaxial wafer and a display device that includes a display substrate, a first sub pixel unit and a second sub pixel unit. The first sub pixel unit and the second sub pixel unit belong to same color type. The first sub pixel unit and the second sub pixel unit are formed from an epitaxial structure on the epitaxial wafer. The first sub pixel unit and the second sub pixel unit are formed and transferred to the display substrate from the epitaxial wafer. A first light emitting area of the first sub pixel unit and a second light emitting area of the second sub pixel unit are related to at least the photoluminescence measurement result of the epitaxial wafer.

公开(公告)号：US20200028043A1

公开(公告)日：2020-01-23

申请号：US16212690

申请日：2018-12-07

申请人： PlayNitride Inc.

发明人： Chih-Ling Wu ,  Yi-Min Su ,  Yu-Yun Lo

IPC分类号： H01L33/62 ,  H01L33/12 ,  H01L25/075

摘要： A structure with micro devices includes a substrate, at least one micro device, and at least one holding structure. The micro device is disposed on the substrate. The micro device has a top surface and a bottom surface opposite to each other, a peripheral surface connected with the top surface and the bottom surface, a first-type electrode, and a second-type electrode. The holding structure is disposed on the substrate and is away from the first-type electrode and the second-type electrode. The holding structure includes at least one connecting portion and at least one holding portion. The connecting portion is disposed on an edge of the top surface of the micro device. The holding portion is connected to the connecting portion and extends onto the substrate.