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公开(公告)号：US11257987B2
公开(公告)日：2022-02-22
申请号：US15953509
申请日：2018-04-16
申请人： PlayNitride Inc.
发明人： Yu-Yun Lo , Chih-Ling Wu , Yi-Min Su
IPC分类号： H01L21/677 , H01L33/48 , H01L25/075 , H01L33/00
摘要： A structure with micro light-emitting device includes a substrate, at least one micro light-emitting device, a holding structure, and at least one buffer structure. The micro light-emitting device is disposed on the substrate, and there is a vertical distance between the micro light-emitting device and the substrate. The holding structure is disposed on the substrate and directly contacts the micro light-emitting device. The buffer structure directly contacts the holding structure. Here, a Young's modulus of the buffer structure is smaller than a Young's modulus of the holding structure.
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公开(公告)号：US20200028043A1
公开(公告)日：2020-01-23
申请号：US16212690
申请日：2018-12-07
申请人： PlayNitride Inc.
发明人： Chih-Ling Wu , Yi-Min Su , Yu-Yun Lo
IPC分类号： H01L33/62 , H01L33/12 , H01L25/075
摘要： A structure with micro devices includes a substrate, at least one micro device, and at least one holding structure. The micro device is disposed on the substrate. The micro device has a top surface and a bottom surface opposite to each other, a peripheral surface connected with the top surface and the bottom surface, a first-type electrode, and a second-type electrode. The holding structure is disposed on the substrate and is away from the first-type electrode and the second-type electrode. The holding structure includes at least one connecting portion and at least one holding portion. The connecting portion is disposed on an edge of the top surface of the micro device. The holding portion is connected to the connecting portion and extends onto the substrate.
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公开(公告)号：US10424615B2
公开(公告)日：2019-09-24
申请号：US16003133
申请日：2018-06-08
申请人： PlayNitride Inc.
发明人： Chih-Ling Wu , Yu-Hung Lai , Yi-Min Su , Yu-Yun Lo , Tzu-Yang Lin
IPC分类号： H01L33/40 , H01L27/15 , H01L25/075 , H01L33/62 , H01L33/20
摘要： A display panel including a backplane, a first bonding layer, a plurality of micro light-emitting diodes, a first insulation layer, and a second bonding layer is provided. The first bonding layer is disposed on the backplane. The micro light-emitting diodes are disposed on the first bonding layer and are electrically connected to the first bonding layer. The first insulation layer is located between any adjacent two of the micro light-emitting diodes. The first insulation layer has a concave-convex surface. The second bonding layer is disposed on the micro light-emitting diodes and the first insulation layer and is electrically connected to the micro light-emitting diodes. A micro light-emitting diode apparatus including a substrate, a plurality of micro light-emitting diodes, and a first insulation layer is provided. The first insulation layer is located between any adjacent two of the micro light-emitting diodes. The first insulation layer has a concave-convex surface.
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公开(公告)号：US20190115498A1
公开(公告)日：2019-04-18
申请号：US15869097
申请日：2018-01-12
申请人： PlayNitride Inc.
发明人： Chih-Ling Wu , Yi-Min Su
IPC分类号： H01L33/20 , H01L25/075 , H01L33/62
CPC分类号： H01L33/20 , H01L25/0753 , H01L33/62
摘要： A micro light emitting device includes an epitaxial structure, a first type electrode, and a second type electrode. The epitaxial structure has a first accommodating cavity. The first type electrode is disposed on the first accommodating cavity of the epitaxial structure and has a second accommodating cavity. The second type electrode is disposed on the epitaxial structure, wherein the epitaxial structure is located between the first type electrode and the second type electrode.
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公开(公告)号：US11094849B2
公开(公告)日：2021-08-17
申请号：US16659584
申请日：2019-10-22
申请人： PlayNitride Inc.
发明人： Chih-Ling Wu , Yi-Min Su
摘要： A light emitting diode display includes a driving substrate, a plurality of micro light-emitting devices, a first common electrode, and a second common electrode. The micro light-emitting devices are arranged on the driving substrate. Each of the micro light-emitting devices includes an epitaxial structure, a first type electrode, and a second type electrode. The first common electrode is disposed on the driving substrate and located between the second type electrodes of the micro light-emitting devices, wherein the first common electrode exposes at least a portion of an upper surface of each of the second type electrodes. The second common electrode is located between the second type electrodes of the micro light-emitting devices and electrically connected to the first common electrode, wherein the second common electrode does not directly contact the micro light-emitting devices.
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公开(公告)号：US20200176637A1
公开(公告)日：2020-06-04
申请号：US16779682
申请日：2020-02-03
申请人： PlayNitride Inc.
发明人： Chih-Ling Wu , Yi-Min Su
IPC分类号： H01L33/38 , G09G3/32 , H01L33/62 , H01L25/075
摘要： A micro light emitting device includes an epitaxial structure and a first type electrode. The epitaxial structure includes a first type semiconductor layer, a light emitting layer and a second type semiconductor layer. The light emitting layer is disposed between the first type semiconductor layer and the second type semiconductor layer. The first type semiconductor layer has a first accommodating cavity. The first type electrode is disposed on the first accommodating cavity. A maximum width of the first type electrode is greater than or equal to a maximum width of an upper surface of the first type semiconductor layer.
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公开(公告)号：US10121772B1
公开(公告)日：2018-11-06
申请号：US15869090
申请日：2018-01-12
申请人： PlayNitride Inc.
发明人： Chih-Ling Wu , Yu-Hung Lai , Yi-Min Su
摘要： A display apparatus includes a driving substrate, a plurality of light-emitting devices, and a plurality of metal common electrodes. The light-emitting devices are dispersedly disposed on the driving substrate, and each of the light-emitting devices includes an epitaxial structure and a first type electrode and a second type electrode disposed on the epitaxial structure. The metal common electrodes are dispersedly disposed on the driving substrate and in contact with a portion of the second type electrode of each of the light-emitting devices to form an ohmic contact.
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公开(公告)号：US10079265B1
公开(公告)日：2018-09-18
申请号：US15658405
申请日：2017-07-25
申请人： PlayNitride Inc.
发明人： Chih-Ling Wu , Yu-Hung Lai , Yi-Min Su , Yu-Yun Lo , Tzu-Yang Lin
摘要： A display panel including a backplane, a first bonding layer, a plurality of micro light-emitting diodes, a first insulation layer, and a second bonding layer is provided. The first bonding layer is disposed on the backplane. The micro light-emitting diodes are disposed on the first bonding layer and are electrically connected to the first bonding layer. The first insulation layer is located between any adjacent two of the micro light-emitting diodes. The first insulation layer has a concave-convex surface. The second bonding layer is disposed on the micro light-emitting diodes and the first insulation layer and is electrically connected to the micro light-emitting diodes. A micro light-emitting diode apparatus including a substrate, a plurality of micro light-emitting diodes, and a first insulation layer is provided. The first insulation layer is located between any adjacent two of the micro light-emitting diodes. The first insulation layer has a concave-convex surface.
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公开(公告)号：US09787053B2
公开(公告)日：2017-10-10
申请号：US15197790
申请日：2016-06-30
申请人： PlayNitride Inc.
发明人： Chih-Ling Wu , Yu-Yun Lo
CPC分类号： H01S5/0224 , H01L2224/48463 , H01L2224/49107 , H01S5/0213 , H01S5/02461 , H01S5/0425 , H01S5/2205 , H01S5/227
摘要： A laser diode chip includes a removable substrate, a first semiconductor layer disposed on the removable substrate, an emitting layer disposed on one part of the first semiconductor layer, a second semiconductor layer disposed on the emitting layer and forming a ridge mesa, a current conducting layer disposed on another part of the first semiconductor layer, a patterned insulating layer covering the second semiconductor layer and the current conducting layer and including a first zone and a second zone which respectively expose a part of the current conducting layer and a part of the second semiconductor layer, a first electrode and a second electrode respectively disposed on the first zone and the second zone. A projection of the ridge mesa projected to the removable substrate covers a part of projections of the first electrode and the second electrode projected to the removable substrate.
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公开(公告)号：US09722393B2
公开(公告)日：2017-08-01
申请号：US15197789
申请日：2016-06-30
申请人： PlayNitride Inc.
发明人： Chih-Ling Wu , Yu-Yun Lo
CPC分类号： H01S5/0224 , H01L2224/48463 , H01L2224/49107 , H01S5/0213 , H01S5/02461 , H01S5/0422 , H01S5/0425 , H01S5/22 , H01S5/227
摘要： A flip chip type laser diode includes a first substrate, a first semiconductor layer disposed on the first substrate, an emitting layer disposed on one part of the first semiconductor layer, a second semiconductor layer disposed on the emitting layer and forming a ridge mesa, a current conducting layer disposed on another part of the first semiconductor layer, a patterned insulating layer covering the second semiconductor layer and the current conducting layer and including a first zone and a second zone which respectively expose a part of the current conducting layer and a part of the second semiconductor layer, a first electrode and a second electrode respectively disposed on the first zone and the second zone. A projection of the ridge mesa projected to the first substrate covers a part of projections of the first electrode and the second electrode projected to the first substrate.
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