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公开(公告)号：US12027599B2
公开(公告)日：2024-07-02
申请号：US17387876
申请日：2021-07-28
Inventor： Rock Hyun Baek , Jun Sik Yoon
IPC: H01L29/423 , H01L21/822 , H01L21/8234 , H01L27/088 , H01L29/06
CPC classification number: H01L29/42392 , H01L21/8221 , H01L21/823412 , H01L21/823418 , H01L21/823437 , H01L21/823481 , H01L27/088 , H01L29/0673
Abstract: Disclosed in a CASCODE device in which multiple transistors are stacked in a vertical direction and connected in series. The CASCODE device exhibits improvements in device/circuit intrinsic gain (GmRo) that is a performance index for analog/RF applications, cutoff frequency (Ft), and maximum oscillation frequency (Fmax). A method of manufacturing the CASCODE device is also disclosed.
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公开(公告)号：US11894424B2
公开(公告)日：2024-02-06
申请号：US18071876
申请日：2022-11-30
Inventor： Rock Hyun Baek , Jun Sik Yoon , Jin Su Jeong , Seung Hwan Lee
IPC: H01L29/08 , H01L29/10 , H01L29/49 , H01L29/51 , H01L29/66 , H01L29/78 , H01L21/311 , H01L21/3205 , H01L29/423
CPC classification number: H01L29/0847 , H01L29/1079 , H01L29/4941 , H01L29/518 , H01L29/66795 , H01L29/785 , H01L2029/7858
Abstract: Disclosed is a fin field-effect transistor having size-reduced source/drain regions so that a merging phenomenon of epitaxial structures between transistors in a layout is prevented, thus increasing the number of transistors per unit area, and so that an additional mask process is not required, thus maintain processing costs without change, and a method of manufacturing the same.
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公开(公告)号：US11387317B2
公开(公告)日：2022-07-12
申请号：US16750292
申请日：2020-01-23
Inventor： Rock Hyun Baek , Jun Sik Yoon , Jin Su Jeong , Seung Hwan Lee
Abstract: Disclosed is a field effect transistor including an insulating film disposed between a source/drain region and a substrate. Since the insulating film prevents current leakage under a channel, it is not necessary to form a punch-through stopper. Further disclosed is a method of forming a field effect transistor.
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