公开(公告)号：US20160284414A1

公开(公告)日：2016-09-29

申请号：US14727878

申请日：2015-06-02

Applicant: PHISON ELECTRONICS CORP.

Inventor： Wei Lin ,  Tien-Ching Wang ,  Kuo-Hsin Lai ,  Yu-Cheng Hsu ,  Chi-Heng Yang

IPC: G11C16/14 ,  G11C29/44 ,  G11C16/26 ,  G06F3/06 ,  G06F12/08

CPC classification number: G11C16/14 ,  G06F3/0604 ,  G06F3/0619 ,  G06F3/0629 ,  G06F3/0679 ,  G06F12/0246 ,  G06F12/0802 ,  G06F2212/1044 ,  G06F2212/7203 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/26 ,  G11C16/349 ,  G11C29/021 ,  G11C29/028 ,  G11C29/4401 ,  G11C2029/0409 ,  G11C2211/5648

Abstract: A data programming method, a memory storage device and a memory control circuit unit are provided. The method includes: receiving first data and programming the first data into a first lower physical programming unit; receiving second data; in response to the second data to be programmed into a first upper physical programming unit corresponding to the first lower physical programming unit, performing a first data obtaining operation which does not include reading the first lower physical programming unit by using a default read voltage; and programming the second data into the first upper physical programming unit according to the third data obtained through the first data obtaining operation.

Abstract translation: 提供数据编程方法，存储器存储装置和存储器控制电路单元。 该方法包括：接收第一数据并将第一数据编程到第一较低物理编程单元中; 接收第二数据; 响应于要被编程到与第一下部物理编程单元相对应的第一上部物理编程单元的第二数据，执行不包括通过使用默认读取电压读取第一下部物理编程单元的第一数据获取操作; 以及根据通过第一数据获取操作获得的第三数据将第二数据编程到第一上层物理编程单元中。

公开(公告)号：US09530509B2

公开(公告)日：2016-12-27

申请号：US14727878

申请日：2015-06-02

Applicant: PHISON ELECTRONICS CORP.

Inventor： Wei Lin ,  Tien-Ching Wang ,  Kuo-Hsin Lai ,  Yu-Cheng Hsu ,  Chi-Heng Yang

IPC: G06F12/00 ,  G11C16/14 ,  G06F3/06 ,  G06F12/08 ,  G11C16/26 ,  G11C29/44

CPC classification number: G11C16/14 ,  G06F3/0604 ,  G06F3/0619 ,  G06F3/0629 ,  G06F3/0679 ,  G06F12/0246 ,  G06F12/0802 ,  G06F2212/1044 ,  G06F2212/7203 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/26 ,  G11C16/349 ,  G11C29/021 ,  G11C29/028 ,  G11C29/4401 ,  G11C2029/0409 ,  G11C2211/5648

Abstract: A data programming method, a memory storage device and a memory control circuit unit are provided. The method includes: receiving first data and programming the first data into a first lower physical programming unit; receiving second data; in response to the second data to be programmed into a first upper physical programming unit corresponding to the first lower physical programming unit, performing a first data obtaining operation which does not include reading the first lower physical programming unit by using a default read voltage; and programming the second data into the first upper physical programming unit according to the third data obtained through the first data obtaining operation.

Abstract translation: 提供数据编程方法，存储器存储装置和存储器控制电路单元。 该方法包括：接收第一数据并将第一数据编程到第一较低物理编程单元中; 接收第二数据; 响应于要被编程到与第一下部物理编程单元相对应的第一上部物理编程单元的第二数据，执行不包括通过使用默认读取电压读取第一下部物理编程单元的第一数据获取操作; 以及根据通过第一数据获取操作获得的第三数据将第二数据编程到第一上层物理编程单元中。