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公开(公告)号：US20140328121A1
公开(公告)日：2014-11-06
申请号：US14336600
申请日：2014-07-21
申请人： Ovonyx, Inc.
发明人： George A. Gordon , Semyon D. Savransky , Ward D. Parkinson , Sergey Kostylev , James Reed , Tyler A. Lowrey , Ilya V. Karpov , Gianpaolo Spadini
CPC分类号： G11C13/0033 , G11C8/10 , G11C11/5678 , G11C13/0004 , G11C13/003 , G11C13/0035 , G11C13/004 , G11C13/0061 , G11C13/0069 , G11C16/3431 , G11C29/04 , G11C2013/0052 , G11C2013/0078 , G11C2013/0092 , G11C2213/76
摘要： Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
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公开(公告)号：US09251895B2
公开(公告)日：2016-02-02
申请号：US14512545
申请日：2014-10-13
申请人： Ovonyx, Inc.
发明人： George A. Gordon , Semyon D. Savransky , Ward D. Parkinson , Sergey Kostylev , James Reed , Tyler A. Lowrey , Ilya V. Karpov , Gianpaolo Spadini
CPC分类号： G11C13/0033 , G11C8/10 , G11C11/5678 , G11C13/0004 , G11C13/003 , G11C13/0035 , G11C13/004 , G11C13/0061 , G11C13/0069 , G11C16/3431 , G11C29/04 , G11C2013/0052 , G11C2013/0078 , G11C2013/0092 , G11C2213/76
摘要： Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
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公开(公告)号：US09536606B2
公开(公告)日：2017-01-03
申请号：US14533341
申请日：2014-11-05
申请人： Ovonyx, Inc.
CPC分类号： G11C13/0069 , G11C13/0004 , G11C13/0061 , G11C2013/009 , G11C2013/0092 , G11C2213/77
摘要： A seasoned phase change memory has been subjected to a longer pulse to adjust resistance levels prior to use of the phase change memory.
摘要翻译： 在使用相变存储器之前，经验丰富的相变存储器已经经受更长的脉冲以调整电阻水平。
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公开(公告)号：US20150055409A1
公开(公告)日：2015-02-26
申请号：US14533341
申请日：2014-11-05
申请人： Ovonyx, Inc.
IPC分类号： G11C13/00
CPC分类号： G11C13/0069 , G11C13/0004 , G11C13/0061 , G11C2013/009 , G11C2013/0092 , G11C2213/77
摘要： A seasoned phase change memory has been subjected to a longer pulse to adjust resistance levels prior to use of the phase change memory.
摘要翻译： 在使用相变存储器之前，经验丰富的相变存储器已经经受更长的脉冲以调整电阻水平。
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公开(公告)号：US08861293B2
公开(公告)日：2014-10-14
申请号：US14102820
申请日：2013-12-11
申请人： Ovonyx, Inc.
发明人： George A. Gordon , Semyon D. Savransky , Ward D. Parkinson , Sergey Kostylev , James Reed , Tyler A. Lowrey , Ilya V. Karpov , Gianpaolo Spadini
CPC分类号： G11C13/0033 , G11C8/10 , G11C11/5678 , G11C13/0004 , G11C13/003 , G11C13/0035 , G11C13/004 , G11C13/0061 , G11C13/0069 , G11C16/3431 , G11C29/04 , G11C2013/0052 , G11C2013/0078 , G11C2013/0092 , G11C2213/76
摘要： Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
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公开(公告)号：US20140104939A1
公开(公告)日：2014-04-17
申请号：US14132286
申请日：2013-12-18
申请人： Ovonyx, Inc.
发明人： Ilya V. Karpov , Sean Jong Lee , Yudong Kim , Greg Atwood
CPC分类号： H01L45/141 , G11C13/0004 , H01L27/2427 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/1683
摘要： An ovonic threshold switch may be formed of a continuous chalcogenide layer. That layer spans multiple cells, forming a phase change memory. In other words, the ovonic threshold switch may be formed of a chalcogenide layer which extends, uninterrupted, over numerous cells of a phase change memory.
摘要翻译： 可以由连续的硫族化物层形成一个超声阈值开关。 该层跨越多个单元，形成相变存储器。 换句话说，超声阈值开关可以由在相变存储器的多个单元上不间断地延伸的硫族化物层形成。
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公开(公告)号：US20140098604A1
公开(公告)日：2014-04-10
申请号：US14102820
申请日：2013-12-11
申请人： Ovonyx, Inc.
发明人： George A. Gordon , Semyon D. Savransky , Ward D. Parkinson , Sergey Kostylev , James Reed , Tyler A. Lowrey , Ilya V. Karpov , Gianpaolo Spadini
CPC分类号： G11C13/0033 , G11C8/10 , G11C11/5678 , G11C13/0004 , G11C13/003 , G11C13/0035 , G11C13/004 , G11C13/0061 , G11C13/0069 , G11C16/3431 , G11C29/04 , G11C2013/0052 , G11C2013/0078 , G11C2013/0092 , G11C2213/76
摘要： Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
摘要翻译： 通过在对相变存储器中的复位状态进行编程时产生基本上不含结晶核的非晶相，可以减小从复位到设定状态的干扰。 在一些实施例中，这可以通过使用超过相变存储元件的阈值电压的电流或电压来实现，但不超过将导致干扰的安全电流电压来实现。
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公开(公告)号：US20150109857A1
公开(公告)日：2015-04-23
申请号：US14512545
申请日：2014-10-13
申请人： Ovonyx, Inc.
发明人： George A. Gordon , Semyon D. Savransky , Ward D. Parkinson , Sergey Kostylev , James Reed , Tyler A. Lowrey , Ilya V. Karpov , Gianpaolo Spadini
CPC分类号： G11C13/0033 , G11C8/10 , G11C11/5678 , G11C13/0004 , G11C13/003 , G11C13/0035 , G11C13/004 , G11C13/0061 , G11C13/0069 , G11C16/3431 , G11C29/04 , G11C2013/0052 , G11C2013/0078 , G11C2013/0092 , G11C2213/76
摘要： Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
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公开(公告)号：US09159915B2
公开(公告)日：2015-10-13
申请号：US14132286
申请日：2013-12-18
申请人： Ovonyx, Inc.
发明人： Ilya V. Karpov , Sean Jong Lee , Yudong Kim , Greg Atwood
CPC分类号： H01L45/141 , G11C13/0004 , H01L27/2427 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/1683
摘要： An ovonic threshold switch may be formed of a continuous chalcogenide layer. That layer spans multiple cells, forming a phase change memory. In other words, the ovonic threshold switch may be formed of a chalcogenide layer which extends, uninterrupted, over numerous cells of a phase change memory.
摘要翻译： 可以由连续的硫族化物层形成一个超声阈值开关。 该层跨越多个单元，形成相变存储器。 换句话说，超声阈值开关可以由在相变存储器的多个单元上不间断地延伸的硫族化物层形成。
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公开(公告)号：US20150206581A1
公开(公告)日：2015-07-23
申请号：US14672332
申请日：2015-03-30
申请人： Ovonyx, Inc.
发明人： George A. Gordon , Semyon D. Savransky , Ward D. Parkinson , Sergey Kostylev , James Reed , Tyler A. Lowrey , Ilya V. Karpov , Gianpaolo Spadini
CPC分类号： G11C13/0033 , G11C8/10 , G11C11/5678 , G11C13/0004 , G11C13/003 , G11C13/0035 , G11C13/004 , G11C13/0061 , G11C13/0069 , G11C16/3431 , G11C29/04 , G11C2013/0052 , G11C2013/0078 , G11C2013/0092 , G11C2213/76
摘要： Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
摘要翻译： 通过在对相变存储器中的复位状态进行编程时产生基本上不含结晶核的非晶相，可以减小从复位到设定状态的干扰。 在一些实施例中，这可以通过使用超过相变存储元件的阈值电压的电流或电压来实现，但不超过将导致干扰的安全电流电压来实现。
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