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公开(公告)号：US11581707B2
公开(公告)日：2023-02-14
申请号：US17324416
申请日：2021-05-19
申请人： OSRAM OLED GmbH
摘要： A method of producing a laser diode bar includes producing a plurality of emitters arranged side by side, emitters each including a semiconductor layer sequence having an active layer that generates laser radiation, a p-contact on a first main surface of the laser diode bar and an n-contact on a second main surface of the laser diode bar opposite the first main surface, testing at least one optical and/or electrical property of the emitters, wherein emitters in which the optical and/or electrical property lies within a predetermined setpoint range are assigned to a group of first emitters, and emitters in which the at least one optical and/or electrical property lies outside the predetermined setpoint range are assigned to a group of second emitters, and electrically contacting first emitters, wherein second emitters are not electrically contacted so that they are not supplied with current during operation of the laser diode bar.
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公开(公告)号：US20210273416A1
公开(公告)日：2021-09-02
申请号：US17324416
申请日：2021-05-19
申请人： OSRAM OLED GmbH
IPC分类号： H01S5/40 , H01S5/042 , H01S5/00 , H01S5/02345
摘要： A method of producing a laser diode bar includes producing a plurality of emitters arranged side by side, emitters each including a semiconductor layer sequence having an active layer that generates laser radiation, a p-contact on a first main surface of the laser diode bar and an n-contact on a second main surface of the laser diode bar opposite the first main surface, testing at least one optical and/or electrical property of the emitters, wherein emitters in which the optical and/or electrical property lies within a predetermined setpoint range are assigned to a group of first emitters, and emitters in which the at least one optical and/or electrical property lies outside the predetermined setpoint range are assigned to a group of second emitters, and electrically contacting first emitters, wherein second emitters are not electrically contacted so that they are not supplied with current during operation of the laser diode bar.
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公开(公告)号：US10938180B2
公开(公告)日：2021-03-02
申请号：US16834037
申请日：2020-03-30
申请人： OSRAM OLED GmbH
发明人： Sven Gerhard , Alfred Lell , Clemens Vierheilig , Andreas Löffler
摘要： An optoelectronic component includes a layer structure including an active zone that generates electromagnetic radiation, wherein the active zone is arranged in a plane, the layer structure includes a top side and four side faces, the first and third side faces are arranged opposite one another, the second and fourth side faces are arranged opposite one another, a strip-type ridge structure is arranged on the top side of the layer structure, the ridge structure extends between the first side face and the third side face, the first side face constitutes an emission face for electromagnetic radiation, a first recess is introduced into the top side of the layer structure laterally alongside the ridge structure, a second recess is introduced into the first recess, and the second recess extends as far as the second side face.
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公开(公告)号：US20210057884A1
公开(公告)日：2021-02-25
申请号：US16982425
申请日：2019-03-13
申请人： OSRAM OLED GmbH
发明人： Jan Marfeld , André Somers , Andreas Löffler , Sven Gerhard
摘要： In an embodiment, the semiconductor laser (1) comprises a semiconductor layer sequence (2) in which an active zone (22) for generating laser radiation (L) is located. Several electrical contact surfaces (5) serve for external electrical contacting of the semiconductor layer sequence (2). Several parallel ridge waveguides (3) are formed from the semiconductor layer sequence (2) and configured to guide the laser radiation (L) along a resonator axis, so that there is a separating trench (6) between adjacent ridge waveguides. At least one electrical feed (4) serves from at least one of the electrical contact surfaces (5) to guide the current to at least one of the ridge waveguides (3). A distance (A4) between the ridge waveguides is at most 50 μm. The ridge waveguides (3) are electrically controllable individually or in groups independently of one another and/or configured for single-mode operation.
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公开(公告)号：US20210167581A1
公开(公告)日：2021-06-03
申请号：US17172138
申请日：2021-02-10
申请人： OSRAM OLED GmbH
发明人： Sven Gerhard , Alfred Lell , Clemens Vierheilig , Andreas Löffler
摘要： An optoelectronic component includes a layer structure including an active zone that generates electromagnetic radiation and is arranged in a plane, wherein the layer structure includes a top side and four side faces, first and third side faces are arranged opposite one another, second and fourth side faces are arranged opposite one another, a strip-shaped ridge structure is arranged on the top side of the layer structure and extends between the first side face and the third side face, the first side face constitutes an emission face for electromagnetic radiation, wherein a first recess is introduced into the top side of the layer structure laterally alongside the ridge structure, a second recess is introduced into the first recess, the second recess extends as far as the second side face, and at least one third recess is introduced into a base face of the first recess laterally alongside the ridge structure.
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公开(公告)号：US11742633B2
公开(公告)日：2023-08-29
申请号：US17172138
申请日：2021-02-10
申请人： OSRAM OLED GmbH
发明人： Sven Gerhard , Alfred Lell , Clemens Vierheilig , Andreas Löffler
IPC分类号： H01S5/22 , H01S5/30 , H01S5/02 , H01S5/0234
CPC分类号： H01S5/2205 , H01S5/22 , H01S5/3013 , H01S5/3018 , H01S5/0202 , H01S5/0234 , H01S5/2222 , H01S2301/176
摘要： An optoelectronic component includes a layer structure including an active zone that generates electromagnetic radiation and is arranged in a plane, wherein the layer structure includes a top side and four side faces, first and third side faces are arranged opposite one another, second and fourth side faces are arranged opposite one another, a strip-shaped ridge structure is arranged on the top side of the layer structure and extends between the first side face and the third side face, the first side face constitutes an emission face for electromagnetic radiation, wherein a first recess is introduced into the top side of the layer structure laterally alongside the ridge structure, a second recess is introduced into the first recess, the second recess extends as far as the second side face, and at least one third recess is introduced into a base face of the first recess laterally alongside the ridge structure.
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公开(公告)号：US20200227893A1
公开(公告)日：2020-07-16
申请号：US16834037
申请日：2020-03-30
申请人： OSRAM OLED GmbH
发明人： Sven Gerhard , Alfred Lell , Clemens Vierheilig , Andreas Löffler
摘要： An optoelectronic component includes a layer structure including an active zone that generates electromagnetic radiation, wherein the active zone is arranged in a plane, the layer structure includes a top side and four side faces, the first and third side faces are arranged opposite one another, the second and fourth side faces are arranged opposite one another, a strip-type ridge structure is arranged on the top side of the layer structure, the ridge structure extends between the first side face and the third side face, the first side face constitutes an emission face for electromagnetic radiation, a first recess is introduced into the top side of the layer structure laterally alongside the ridge structure, a second recess is introduced into the first recess, and the second recess extends as far as the second side face.
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公开(公告)号：US10693033B2
公开(公告)日：2020-06-23
申请号：US16452015
申请日：2019-06-25
申请人： OSRAM OLED GMBH
IPC分类号： H01L33/00 , H01L21/687 , H01L33/26 , H01L21/67 , H01L33/62 , H01S5/10 , H01S5/22 , H01S5/40 , H01S5/32 , H01S5/026 , H01S5/20 , H01S5/227 , H01L33/32 , H01S5/323
摘要： A semiconductor chip (100) is provided, having a first semiconductor layer (1), which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).
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公开(公告)号：US11973317B2
公开(公告)日：2024-04-30
申请号：US16982425
申请日：2019-03-13
申请人： OSRAM OLED GmbH
发明人： Jan Marfeld , André Somers , Andreas Löffler , Sven Gerhard
IPC分类号： H01S5/0234 , H01S5/0237 , H01S5/02375 , H01S5/024 , H01S5/026 , H01S5/042 , H01S5/22 , H01S5/323
CPC分类号： H01S5/22 , H01S5/0234 , H01S5/0237 , H01S5/02375 , H01S5/02469 , H01S5/026 , H01S5/0422 , H01S5/32341
摘要： In an embodiment, the semiconductor laser (1) comprises a semiconductor layer sequence (2) in which an active zone (22) for generating laser radiation (L) is located. Several electrical contact surfaces (5) serve for external electrical contacting of the semiconductor layer sequence (2). Several parallel ridge waveguides (3) are formed from the semiconductor layer sequence (2) and configured to guide the laser radiation (L) along a resonator axis, so that there is a separating trench (6) between adjacent ridge waveguides. At least one electrical feed (4) serves from at least one of the electrical contact surfaces (5) to guide the current to at least one of the ridge waveguides (3). A distance (A4) between the ridge waveguides is at most 50 μm. The ridge waveguides (3) are electrically controllable individually or in groups independently of one another and/or configured for single-mode operation.
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公开(公告)号：US11837844B2
公开(公告)日：2023-12-05
申请号：US16961901
申请日：2018-12-27
申请人： OSRAM OLED GmbH
发明人： John Brückner , Urs Heine , Sven Gerhard , Lars Nähle , Andreas Löffler , André Somers
IPC分类号： H01S5/02 , H01L21/304 , H01L21/302
CPC分类号： H01S5/0203 , H01S5/0206 , H01L21/302 , H01L21/304
摘要： A method for singulating semiconductor components (20) is specified, said method comprising the steps of providing a carrier (21), applying at least two semiconductor chips (22) on the carrier (21), etching at least one break nucleus (23) at a side of the carrier (21) facing the semiconductor chips (22), and singulating at least two semiconductor components (20) by breaking the carrier (21) along the at least one break nucleus (23). The at least one break nucleus (23) extends at least in places in a vertical direction (z), the vertical direction (z) being perpendicular to a main extension plane of the carrier (21), and the at least one break nucleus (23) is arranged between the two semiconductor chips (22) in a lateral direction (x), the lateral direction (x) being parallel to the main extension plane of the carrier (21). Further, each of the semiconductor components (20) comprises at least one of the semiconductor chips (22), and the expansion of the at least one break nucleus (23) in the vertical direction (z) is at least 1% of the expansion of the carrier (21) in the vertical direction (z). Furthermore, a semiconductor component (20) is specified.
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