公开(公告)号：US20040249614A1

公开(公告)日：2004-12-09

申请号：US10800611

申请日：2004-03-15

Applicant: NOVA MEASURING INSTRUMENTS LTD.

Inventor： Moshe Finarov

IPC: G06F015/00

CPC classification number: B05C11/1005 ,  B24B37/013 ,  B24B49/04 ,  B24B49/12

Abstract: A method and system are presented for monitoring a process sequentially applied to a stream of substantially identical articles by a processing tool, so as to terminate the operation of the processing tool upon detecting an end-point signal corresponding to a predetermined value of a desired parameter of the article being processed. The article is processed with the processing tool. Upon completing the processing in response to the end-point signal generated by an end-point detector continuously operating during the processing of the article, integrated monitoring is applied to the processed article to measure the value of the desired parameter. The measured value of the desired parameter is analyzed to determine a correction value thereof to be used for adjusting the end-point signal corresponding to the predetermined value of the desired parameter for terminating the processing of the next article in the stream.

公开(公告)号：US20040191652A1

公开(公告)日：2004-09-30

申请号：US10763383

申请日：2004-01-26

Applicant: Nova Measuring Instruments Ltd.

Inventor： Giora Dishon ,  Moshe Finarov ,  Zvi Nirel ,  Yoel Cohen

IPC: G03F007/00

CPC classification number: G03F7/70058 ,  G01B11/14 ,  G01N21/88 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/8867 ,  G03F7/3028 ,  G03F7/70525 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/7065 ,  G03F7/70675 ,  G03F7/7075 ,  G03F7/70991 ,  H01L21/67155

Abstract: Apparatus for processing substrates according to a predetermined photolithography process includes a loading station in which the substrates are loaded, a coating station in which the substrates are coated with a photoresist material, an exposing station in which the photoresist coating is exposed to light through a mask having a predetermined pattern to produce a latent image of the mask on the photoresist coating, a developing station in which the latent image is developed, an unloading station in which the substrates are unloaded and a monitoring station for monitoring the substrates with respect to predetermined parameters of said photolithography process before reaching the unloading station.

Abstract translation: 用于根据预定的光刻工艺处理衬底的设备包括其中装载衬底的装载站，其中衬底涂覆有光致抗蚀剂材料的涂覆站，其中光致抗蚀剂涂层通过掩模暴露于光的曝光站 具有预定图案以在光致抗蚀剂涂层上产生掩模的潜像，其中潜像显影的显影站，卸载基板的卸载站和用于相对于预定参数监测基板的监控站 的光刻工艺。

公开(公告)号：US20030169423A1

公开(公告)日：2003-09-11

申请号：US10303052

申请日：2002-11-25

Applicant: Nova Measuring Instruments Ltd.

Inventor： Moshe Finarov ,  David Scheiner

IPC: G01B011/00

CPC classification number: G03F7/70633

Abstract: An optical measurement method and system are presented for imaging two target structures in two parallel layers, respectively, of a sample, to enable determination of a registration between the two target structures along two mutually perpendicular axes of the layer. The sample is illuminated with incident radiation to produce a radiation response of the sample. The radiation response is collected by an objective lens arrangement, and the collected radiation response is split into two spatially separated radiation components. The split radiation components are directed towards at least one imaging plane along different optical channels characterized by optical paths of different lengths, respectively. The two split radiation components are detected in said at least one imaging plane, and two image parts are thereby acquired, each image part containing images of the two target structures. This enables determination of the relative distance between the two target structures.

Abstract translation: 提出了一种光学测量方法和系统，用于分别对样本的两个平行层中的两个目标结构进行成像，以便能够沿着该层的两个相互垂直的轴确定两个目标结构之间的配准。 用入射辐射照射样品以产生样品的辐射响应。 辐射响应由物镜布置收集，并且收集的辐射响应被分成两个空间上分离的辐射分量。 分裂的辐射分量被引导到沿着不同长度的光路的不同光通道的至少一个成像平面。 在所述至少一个成像平面中检测到两个分离的辐射分量，从而获得两个图像部分，每个图像部分包含两个目标结构的图像。 这使得能够确定两个目标结构之间的相对距离。

公开(公告)号：US20020171828A1

公开(公告)日：2002-11-21

申请号：US10184953

申请日：2002-07-01

Applicant: Nova Measuring Instruments Ltd.

Inventor： Yoel Cohen ,  Moshe Finarov

IPC: G01J003/28

CPC classification number: G03F7/70558

Abstract: A method and measuring tool are presented for automatic control of photoresist-based processing of a workpiece progressing through a processing tool arrangement. Spectrophotometric measurements are applied to the workpiece prior to being processed, spectral characteristics of the workpiece are measured, thereby obtaining measured data indicative of at least one parameter of the workpiece that defines an optimal value of at least processing time parameter of the processing tool to be used in the processing of said workpiece to obtain certain process results. This data is analyzed to determine data indicative of the optimal value of said at least processing time parameter, and thereby enable calculation of a correction value to be applied to said processing time parameter prior to applying the processing tool to the workpiece.

Abstract translation: 提出了一种方法和测量工具，用于自动控制通过加工工具布置进行的工件的基于光致抗蚀剂的处理。 在处理之前将分光光度测量值应用于工件，测量工件的光谱特性，从而获得指示工件的至少一个参数的测量数据，其将处理工具的至少处理时间参数的最佳值定义为 用于处理所述工件以获得一定的工艺结果。 分析该数据以确定指示所述至少处理时间参数的最佳值的数据，从而能够在将加工工具应用于工件之前计算要应用于所述处理时间参数的校正值。

公开(公告)号：US20020090744A1

公开(公告)日：2002-07-11

申请号：US10005118

申请日：2001-12-07

Applicant: NOVA MEASURING INSTRUMENTS LTD.

Inventor： Boaz Brill ,  Moshe Finarov

IPC: H01L021/00

CPC classification number: H01J37/28 ,  G01B15/00 ,  G01N21/47 ,  G01N21/956 ,  G01N23/225 ,  G03F7/70625 ,  H01J2237/2817

Abstract: A measurement method and system are presented for measuring parameters of a patterned structure. Scatterometry and SEM measurements are applied to the structure, measured data indicative of, respectively, the structure parameters and lateral pattern dimensions of the structure are generated. The entire measured data are analyzed so as to enable using measurement results of either one of the scatterometry and SEM measurements for optimizing the other measurement results.

Abstract translation: 提出了一种用于测量图案结构参数的测量方法和系统。 散射测量和SEM测量应用于结构，产生分别表示结构参数和结构的横向图形尺寸的测量数据。 分析整个测量数据，以便能够使用散射测量和SEM测量中的任一个的测量结果来优化其他测量结果。

公开(公告)号：US20020033450A1

公开(公告)日：2002-03-21

申请号：US09942968

申请日：2001-08-31

Applicant: NOVA MEASURING INSTRUMENTS LTD.

Inventor： Moshe Finarov ,  Yoel Cohen

IPC: G21K007/00 ,  G01N023/00

CPC classification number: G01N21/956

Abstract: A method and system are presented for inspecting a structure containing a pattern in the form of a surface relief fabricated by a pattern-creating tool applied to the structure. Reference data is provided being indicative of photometric intensities of light components of different wavelengths returned from a structure having a pattern similar to the pattern of the structure under inspection. Spectrophotometric measurements are continuously applied to successive locations within the surface relief on the structure so as to form a measurement slice thereon. Measured data in the form of a spectrum indicative of photometric intensities of light components of different wavelengths returned from the successive locations within the slice is detected and analyzed to determine whether it correlates with the reference data in accordance with predetermined criteria results.

Abstract translation: 提出了一种方法和系统，用于检查包含由应用于结构的图案生成工具制成的表面浮雕形式的结构。 提供了参考数据，其指示从具有与被检查结构的图案类似的图案的结构返回的不同波长的光分量的光度强度。 分光光度测量连续地施加到结构上的表面浮雕内的连续位置，以便在其上形成测量切片。 检测并分析表示从切片内的连续位置返回的不同波长的光成分的光度强度的光谱的测量数据，以根据预定的标准结果来确定它是否与参考数据相关。

公开(公告)号：US20020051135A1

公开(公告)日：2002-05-02

申请号：US09898467

申请日：2001-07-05

Applicant: NOVA MEASURING INSTRUMENTS LTD.

Inventor： Moshe Finarov

IPC: G01N021/00

CPC classification number: H01L21/6838 ,  B24B37/005 ,  B24B37/013 ,  B24B49/12 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/20

Abstract: An optical system is disclosed for the inspection of wafers during polishing which also includes a measurement system for measuring the thickness of the wafers top layer. The optical system views the wafer through a window and includes a gripping system, which places the wafer in a predetermined viewing location while maintaining the patterned surface completely under water. The optical system also includes a pull-down unit for pulling the measurement system slightly below the horizontal prior to the measurement and returns the measuring system to the horizontal afterwards.

Abstract translation: 公开了一种用于在抛光期间检查晶片的光学系统，其还包括用于测量晶片顶层厚度的测量系统。 光学系统通过窗口观察晶片，并且包括夹持系统，其将晶片放置在预定的观察位置，同时将图案化表面完全保持在水下。 光学系统还包括一个下拉单元，用于在测量之前将测量系统稍微拉到水平面以下，然后将测量系统返回到水平面。

公开(公告)号：US20020005957A1

公开(公告)日：2002-01-17

申请号：US09942849

申请日：2001-08-31

Applicant: NOVA MEASURING INSTRUMENTS LTD.

Inventor： Moshe Finarov ,  David Scheiner ,  Avi Ravid

IPC: G01B011/28

CPC classification number: H01L22/34 ,  B24B37/013 ,  B24B49/02 ,  B24B49/12 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/26

Abstract: A method is presented for optical control of the quality of a process of chemical mechanical planarization (CMP) performed by a polishing tool applied to an article having a patterned area. The article contains a plurality of stacks each formed by a plurality of different layers, thereby defining a pattern in the form of spaced-apart metal regions. The method is capable of locating at least one of residues, erosion and dishing conditions on the article. At least one predetermined site on the article is selected for control. This at least one predetermined site is illuminated, and spectral characteristics of light components reflected from this location are detected. Data representative of the detected light components is analyzed for determining at least one parameter of the article within the at least one illuminated site.

Abstract translation: 提出了一种用于光学控制由应用于具有图案化区域的制品的抛光工具执行的化学机械平面化（CMP）工艺的质量的方法。 该物品包含多个由多个不同层形成的堆叠，从而限定了间隔金属区域形式的图案。 该方法能够定位物品上的残留物，侵蚀和凹陷条件中的至少一种。 选择物品上至少一个预定的位置进行控制。 该至少一个预定位置被照亮，并且检测从该位置反射的光分量的光谱特性。 分析表示检测到的光成分的数据，以确定至少一个照明部位内的物品的至少一个参数。

公开(公告)号：US20040109173A1

公开(公告)日：2004-06-10

申请号：US10724113

申请日：2003-12-01

Applicant: NOVA MEASURING INSTRUMENTS LTD.

Inventor： Moshe Finarov ,  Boaz Brill

IPC: G01B011/14

CPC classification number: G03F7/70616 ,  G01B11/24 ,  G01N21/4788 ,  G01N21/55 ,  G03F1/84

Abstract: A measurement method and system configured to determine parameters of a structure during production, the system including: a stage configured to support the structure during measurements; a measuring unit coupled to the stage; and a processor coupled to the measuring unit. The measuring unit includes: an illumination system configured to direct incident light of substantially broad wavelengths band toward a surface of the structure during measurements; and a detection system coupled to the illumination system and configured to detect light propagating from the surface of the structure during measurements. The measuring unit is configured to generate one or more output signals in response to the detected light during measurements. The processor is configured to determine the parameters of the structure from the one or more output signals during measurements. The parameters include a critical dimension of the structure and a layer characteristic of the structure.

Abstract translation: 一种测量方法和系统，其被配置为在生产期间确定结构的参数，所述系统包括：被配置为在测量期间支撑所述结构的平台; 耦合到所述台的测量单元; 以及耦合到所述测量单元的处理器。 测量单元包括：照明系统，被配置为在测量期间将基本上宽的波长带的入射光引向结构的表面; 以及耦合到所述照明系统并被配置为在测量期间检测从所述结构的表面传播的光的检测系统。 测量单元被配置为在测量期间响应于检测到的光而产生一个或多个输出信号。 处理器被配置为在测量期间从一个或多个输出信号确定结构的参数。 参数包括结构的临界尺寸和结构的层特性。

公开(公告)号：US20030086097A1

公开(公告)日：2003-05-08

申请号：US10259828

申请日：2002-09-30

Applicant: Nova Measuring Instruments Ltd.

Inventor： Moshe Finarov

IPC: G01B011/28

CPC classification number: G01N21/8422 ,  G01B11/0625 ,  G01N21/211 ,  G01N21/3563 ,  G01N21/9501

Abstract: A method and system are presented for optical measurements in multi-layer structures to determine the properties of at least some of the layers. The structure is patterned by removing layer materials within a measurement site of the structure from the top layer to the lowermost layer of interest. Optical measurements are sequentially applied to the layers, by illuminating a measurement area in the layer under measurements, when the layer material above said layer under measurements is removed, thereby obtaining measured data portions for the at least some of the layers, respectively. The properties of each of the at least some layers are calculated, by analyzing the measured data portion of the lowermost layer, and then sequentially interpreting the measured data portions of all the other layers towards the uppermost layer, while utilizing for each layer the calculation results of the one or more underlying layers.

Abstract translation: 提出了一种用于多层结构中的光学测量的方法和系统，以确定至少一些层的性质。 通过将结构的测量位置内的层材料从顶层移到最下层来图案化结构。 当去除在测量下的所述层上方的层材料时，分别通过照射测量层中的测量区域来分别对所述层中的至少一些层进行光学测量。 通过分析最下层的测量数据部分，然后依次将所有其它层的测量数据部分顺序地解释为最上层，同时为每个层使用计算结果来计算每个至少一些层的属性 的一个或多个下层。