公开(公告)号：US20010015811A1

公开(公告)日：2001-08-23

申请号：US09789276

申请日：2001-02-20

Applicant: Nova Measuring Instruments Ltd.

Inventor： Avi Ravid ,  Vladimir Machavariani ,  Amit Weingarten ,  David Scheiner

IPC: G01B011/30

CPC classification number: B24B37/013 ,  B24B37/042 ,  B24B49/12 ,  B24B49/14 ,  H01L21/3212 ,  H01L22/34

Abstract: A test structure is presented to be formed on a patterned structure and to be used for controlling a CMP process applied to the patterned structure, which has a pattern area formed by spaced-apart metal-containing regions representative of real features of the patterned structure. The test structure thus undergoes the same CMP processing as the pattern area. The test structure comprises at least one pattern zone in the form of a metal area with at least one region included in the metal area and made of a material relatively transparent with respect to incident light, as compared to that of the metal.

Abstract translation: 呈现在图案化结构上形成的测试结构，并且用于控制施加到图案化结构的CMP工艺，其具有由表示图案化结构的实际特征的间隔开的含金属区域形成的图案区域。 因此，测试结构经历与图案区域相同的CMP处理。 测试结构包括金属区域形式的至少一个图案区域，其中至少一个区域包括在金属区域中并且由与金属相比相对于入射光相对透明的材料制成。

公开(公告)号：US20010026364A1

公开(公告)日：2001-10-04

申请号：US09789277

申请日：2001-02-20

Applicant: Nova Measuring Instruments Ltd.

Inventor： Avi Ravid ,  Vladimir Machavariani ,  Amit Weingarten

IPC: G01N021/00

CPC classification number: B24B37/013 ,  B24B37/042 ,  B24B49/12 ,  B24B49/14 ,  H01L21/3212 ,  H01L22/34

Abstract: A test structure is presented to be formed on a patterned structure and to be used for controlling a CMP process applied to the patterned structure, which has a pattern area formed by spaced-apart metal-containing regions representative of real features of the patterned structure. The test structure thus undergoes the same CMP processing as the pattern area. The test structure comprises at least two structures aligned along a vertical axis in a spaced-apart parallel relationship, each structure comprising at least one pattern zone containing spaced-apart metal regions, the test structure thereby comprising at least one pair of vertically aligned upper and lower pattern zones. The upper and lower pattern zones in each pair have different patterns oriented with respect to each other such that the metal regions of the lower pattern are located underneath the spaces between the metal regions of the upper pattern.

Abstract translation: 呈现在图案化结构上形成的测试结构，并且用于控制施加到图案化结构的CMP工艺，其具有由表示图案化结构的实际特征的间隔开的含金属区域形成的图案区域。 因此，测试结构经历与图案区域相同的CMP处理。 测试结构包括至少两个以垂直轴线间隔开的平行关系对准的结构，每个结构包括至少一个包含间隔开的金属区域的图案区域，测试结构由此包括至少一对垂直对准的上部和 较低的图案区域。 每对中的上图案区和下图案区具有相对于彼此定向的不同图案，使得下图案的金属区域位于上图案的金属区域之间的空间的下方。

公开(公告)号：US20030155537A1

公开(公告)日：2003-08-21

申请号：US10309348

申请日：2002-12-04

Applicant: Nova Measuring Instruments Ltd.

Inventor： Vladimir Machavariani ,  David Scheiner ,  Amit Weingarten ,  Avi Ravid

IPC: G01V008/00 ,  G01N021/86

CPC classification number: G01N21/95623 ,  G01N21/21 ,  G01N21/8422 ,  G01N21/9501 ,  G01N21/95607

Abstract: A method and system are presented for use in controlling a process of material removal from the surface of a patterned structure, by measuring at least one of residue, erosion, dishing and corrosion effects in the structure induced by this process. The structure is imaged utilizing phase modulation of light reflected from the structure, and a phase map of the structure is thereby obtained. This phase map is analyzed and data indicative of light reflective properties of layer stacks of the structure is utilized to determine a phase difference between light reflected from a selected measured site and at least one reference site spaced-apart from the selected site. The phase difference is thus indicative of the measured effect.

Abstract translation: 提供了一种方法和系统，用于通过测量由该方法诱导的结构中的残留物，侵蚀，凹陷和腐蚀效应中的至少一种来控制从图案化结构的表面去除材料的过程。 利用从结构反射的光的相位调制对该结构进行成像，从而获得该结构的相位图。 分析该相位图，并且利用表示该结构的层叠层的光反射特性的数据来​​确定从所选择的测量部位反射的光与至少一个与选定部位间隔开的参考部位的相位差。 因此，相位差表示测量的效果。

公开(公告)号：US20020005957A1

公开(公告)日：2002-01-17

申请号：US09942849

申请日：2001-08-31

Applicant: NOVA MEASURING INSTRUMENTS LTD.

Inventor： Moshe Finarov ,  David Scheiner ,  Avi Ravid

IPC: G01B011/28

CPC classification number: H01L22/34 ,  B24B37/013 ,  B24B49/02 ,  B24B49/12 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/26

Abstract: A method is presented for optical control of the quality of a process of chemical mechanical planarization (CMP) performed by a polishing tool applied to an article having a patterned area. The article contains a plurality of stacks each formed by a plurality of different layers, thereby defining a pattern in the form of spaced-apart metal regions. The method is capable of locating at least one of residues, erosion and dishing conditions on the article. At least one predetermined site on the article is selected for control. This at least one predetermined site is illuminated, and spectral characteristics of light components reflected from this location are detected. Data representative of the detected light components is analyzed for determining at least one parameter of the article within the at least one illuminated site.

Abstract translation: 提出了一种用于光学控制由应用于具有图案化区域的制品的抛光工具执行的化学机械平面化（CMP）工艺的质量的方法。 该物品包含多个由多个不同层形成的堆叠，从而限定了间隔金属区域形式的图案。 该方法能够定位物品上的残留物，侵蚀和凹陷条件中的至少一种。 选择物品上至少一个预定的位置进行控制。 该至少一个预定位置被照亮，并且检测从该位置反射的光分量的光谱特性。 分析表示检测到的光成分的数据，以确定至少一个照明部位内的物品的至少一个参数。