公开(公告)号：US07701022B2

公开(公告)日：2010-04-20

申请号：US10426015

申请日：2003-04-30

申请人： Noriyuki Shimoji ,  Masaki Takaoka

发明人： Noriyuki Shimoji ,  Masaki Takaoka

IPC分类号： H01L29/84

CPC分类号： F04B43/043 ,  B81B2203/0353 ,  B81C1/00626 ,  B81C2201/0136 ,  H01L29/0657

摘要： A semiconductor device and a method of producing the same is disclosed, in which a through hole is formed in the upper surface of a semiconductor substrate from the lower surface thereof, and an opening of a desired size is formed in a desired position on the upper surface of the substrate. A guide that functions as an etching stopper is formed in the semiconductor substrate. An opening having a width W2 is formed in the guide. The opening faces an opening in a mask used in the formation of a through hole, and the width W2 thereof is narrower than a width W4 of the opening in the mask. The direction in which etching progresses is controlled by the opening formed in the guide as etching is conducted from a lower surface of the substrate to an upper surface of the substrate, and thus deviations in the width W1 and position of an opening in the upper surface of the substrate can be controlled.

摘要翻译： 公开了一种半导体器件及其制造方法，其中从半导体衬底的下表面形成在半导体衬底的上表面中的通孔，并且在上部的所需位置形成所需尺寸的开口 基板的表面。 在半导体衬底中形成用作蚀刻阻挡层的引导件。 在导向件中形成具有宽度W2的开口。 开口面对形成通孔的掩模中的开口，其宽度W2比掩模中的开口的宽度W4窄。 蚀刻进行的方向由形成在引导件中的开口作为蚀刻控制，从基板的下表面传导到基板的上表面，因此在上表面中的宽度W1和开口的位置 可以控制基板。

公开(公告)号：US07354864B2

公开(公告)日：2008-04-08

申请号：US11276320

申请日：2006-02-24

申请人： Noriyuki Shimoji ,  Masaki Takaoka

发明人： Noriyuki Shimoji ,  Masaki Takaoka

IPC分类号： H01L21/302

CPC分类号： F04B43/043 ,  B81B2203/0353 ,  B81C1/00626 ,  B81C2201/0136 ,  H01L29/0657

摘要： A method of producing a semiconductor device is disclosed, in which a through hole is formed in the upper surface of a semiconductor substrate from the lower surface thereof, and an opening of a desired size is formed in a desired position on the upper surface of the substrate. A guide that functions as an etching stopper is formed in the semiconductor substrate. An opening having a width W2 is formed in the guide. The opening faces an opening in a mask used in the formation of a through hole, and the width W2 thereof is narrower than a width W4 of the opening in the mask. The direction in which etching progresses is controlled by the opening formed in the guide as etching is conducted from a lower surface of the substrate to an upper surface of the substrate, and thus deviations in the width W1 and position of an opening in the upper surface of the substrate can be controlled.

摘要翻译： 公开了一种制造半导体器件的方法，其中在半导体衬底的上表面中形成有从其下表面的通孔，并且所需尺寸的开口形成在所述半导体衬底的上表面上的期望位置 基质。 在半导体衬底中形成用作蚀刻阻挡层的引导件。 在导向件中形成宽度为W 2的开口。 开口面向形成通孔所使用的掩模中的开口，其宽度W 2比掩模中的开口的宽度W 4窄。 蚀刻进行的方向由蚀刻形成在导向器中的开口控制，从基板的下表面传导到基板的上表面，因此宽度W 1和上部开口的位置的偏差 可以控制基板的表面。

公开(公告)号：US20050098855A1

公开(公告)日：2005-05-12

申请号：US10426015

申请日：2003-04-30

申请人： Noriyuki Shimoji ,  Masaki Takaoka

发明人： Noriyuki Shimoji ,  Masaki Takaoka

IPC分类号： B81B1/00 ,  F04B43/04 ,  H01L29/06 ,  H01L29/40

CPC分类号： F04B43/043 ,  B81B2203/0353 ,  B81C1/00626 ,  B81C2201/0136 ,  H01L29/0657

摘要： A semiconductor device and a method of producing the same is disclosed, in which a through hole is formed in the upper surface of a semiconductor substrate from the lower surface thereof, and an opening of a desired size is formed in a desired position on the upper surface of the substrate. A guide that functions as an etching stopper is formed in the semiconductor substrate. An opening having a width W2 is formed in the guide. The opening faces an opening in a mask used in the formation of a through hole, and the width W2 thereof is narrower than a width W4 of the opening in the mask. The direction in which etching progresses is controlled by the opening formed in the guide as etching is conducted from a lower surface of the substrate to an upper surface of the substrate, and thus deviations in the width W1 and position of an opening in the upper surface of the substrate can be controlled.

摘要翻译： 公开了一种半导体器件及其制造方法，其中从半导体衬底的下表面形成在半导体衬底的上表面中的通孔，并且在上部的所需位置形成所需尺寸的开口 基板的表面。 在半导体衬底中形成用作蚀刻阻挡层的引导件。 在导向件中形成宽度为W 2的开口。 开口面向形成通孔所使用的掩模中的开口，其宽度W 2比掩模中的开口的宽度W 4窄。 蚀刻进行的方向由作为蚀刻形成在导向器中的开口控制，从基板的下表面传导到基板的上表面，因此宽度W 1和上部开口的位置的偏差 可以控制基板的表面。

公开(公告)号：US20060141398A1

公开(公告)日：2006-06-29

申请号：US11276320

申请日：2006-02-24

申请人： Noriyuki Shimoji ,  Masaki Takaoka

发明人： Noriyuki Shimoji ,  Masaki Takaoka

IPC分类号： G03F7/00

CPC分类号： F04B43/043 ,  B81B2203/0353 ,  B81C1/00626 ,  B81C2201/0136 ,  H01L29/0657

摘要： A method of producing a semiconductor device is disclosed, in which a through hole is formed in the upper surface of a semiconductor substrate from the lower surface thereof, and an opening of a desired size is formed in a desired position on the upper surface of the substrate. A guide that functions as an etching stopper is formed in the semiconductor substrate. An opening having a width W2 is formed in the guide. The opening faces an opening in a mask used in the formation of a through hole, and the width W2 thereof is narrower than a width W4 of the opening in the mask. The direction in which etching progresses is controlled by the opening formed in the guide as etching is conducted from a lower surface of the substrate to an upper surface of the substrate, and thus deviations in the width W1 and position of an opening in the upper surface of the substrate can be controlled.

摘要翻译： 公开了一种制造半导体器件的方法，其中在半导体衬底的上表面中形成有从其下表面的通孔，并且所需尺寸的开口形成在所述半导体衬底的上表面上的期望位置 基质。 在半导体衬底中形成用作蚀刻阻挡层的引导件。 在导向件中形成宽度为W 2的开口。 开口面向形成通孔所使用的掩模中的开口，其宽度W 2比掩模中的开口的宽度W 4窄。 蚀刻进行的方向由蚀刻形成在导向器中的开口控制，从基板的下表面传导到基板的上表面，因此宽度W 1和上部开口的位置的偏差 可以控制基板的表面。

公开(公告)号：US20100206073A1

公开(公告)日：2010-08-19

申请号：US12678942

申请日：2008-09-25

申请人： Daisuke Kaminishi ,  Masaki Takaoka ,  Yoshikazu Fujimori

发明人： Daisuke Kaminishi ,  Masaki Takaoka ,  Yoshikazu Fujimori

IPC分类号： G01C19/56 ,  H01L21/02

CPC分类号： G01C19/56 ,  G01C19/5656

摘要： An angular velocity detecting device includes a semiconductor substrate (2); an oscillator (3) formed on the semiconductor substrate (2); and a control circuit (4) which is formed on the semiconductor substrate (2) and controls the oscillator (3).

摘要翻译： 角速度检测装置包括半导体衬底（2）; 形成在半导体衬底（2）上的振荡器（3）; 以及形成在半导体衬底（2）上并控制振荡器（3）的控制电路（4）。

公开(公告)号：US08978469B2

公开(公告)日：2015-03-17

申请号：US13436931

申请日：2012-03-31

申请人： Masaki Takaoka ,  Daisuke Kaminishi ,  Mizuho Okada ,  Nobuhisa Yamashita

发明人： Masaki Takaoka ,  Daisuke Kaminishi ,  Mizuho Okada ,  Nobuhisa Yamashita

IPC分类号： G01C19/56 ,  G01C19/5769 ,  H01L41/08 ,  H01L41/113

CPC分类号： G01C19/5769 ,  H01L41/0815 ,  H01L41/1132

摘要： A piezoelectric thin film structure includes a substrate, a silicon oxide film disposed on the substrate, a first aluminum oxide film disposed on the silicon oxide film, a lower electrode layer disposed on the first aluminum oxide film, a piezoelectric film layer disposed on the lower electrode layer, and an upper electrode layer disposed on the piezoelectric film layer.

摘要翻译： 一种压电薄膜结构，包括基板，设置在基板上的氧化硅膜，设置在氧化硅膜上的第一氧化铝膜，设置在第一氧化铝膜上的下电极层，设置在下层的压电膜层 电极层和设置在压电膜层上的上电极层。

公开(公告)号：US20070037032A1

公开(公告)日：2007-02-15

申请号：US11331384

申请日：2006-01-12

申请人： Norikazu Nishiyama ,  Masaki Takaoka ,  Akira Kamisawa

发明人： Norikazu Nishiyama ,  Masaki Takaoka ,  Akira Kamisawa

IPC分类号： H01M8/10 ,  C08J5/22

CPC分类号： C08J5/2256 ,  C08J2383/04 ,  H01M8/1011 ,  H01M8/1037 ,  H01M8/1048 ,  H01M8/1072 ,  H01M8/1088 ,  Y02E60/523 ,  Y02P70/56

摘要： The proton-conductive film comprises a mesoporous thin film that has, as the principal component thereof, a crosslinked structure having a metal-oxygen skeleton with an acid group bonding to at least a part thereof, in which the pores are periodically aligned and the inner wall of the pores is coated with a silanol group.

摘要翻译： 质子传导膜包括介孔薄膜，其以其主要成分为具有键合至少部分的具有酸基的金属 - 氧骨架的交联结构，其中孔周期性地取向，并且内部 孔的壁涂有硅烷醇基团。

公开(公告)号：US20060292413A1

公开(公告)日：2006-12-28

申请号：US10570802

申请日：2004-09-10

申请人： Masaki Takaoka

发明人： Masaki Takaoka

IPC分类号： H01M8/10 ,  B05D5/12

CPC分类号： H01M8/1037 ,  H01M8/1067 ,  H01M8/1074 ,  H01M8/109 ,  H01M2300/0082 ,  Y02P70/56

摘要： An aim of the invention is to provide a stable fuel cell having a high mechanical strength and a high reliability. Another aim of the invention is to provide a fuel cell which can be easily produced. The fuel cell comprises a porous electrically-conductive material (13) as a substrate, a protonically-conductive membrane (16) formed on the porous electrically-conductive material (13) made of a mesoporous thin film comprising as a main component a crosslinked structure having a metal-oxygen skeleton having an acid group connected to at least a part thereof and having pores periodically aligned therein and a porous electrically-conductive material layer (17) formed on the protonically-conductive membrane.

摘要翻译： 本发明的目的是提供一种具有高机械强度和高可靠性的稳定型燃料电池。 本发明的另一个目的是提供一种易于生产的燃料电池。 燃料电池包括作为基底的多孔导电材料（13），形成在由介孔薄膜构成的多孔导电材料（13）上的质子传导膜（16），该介孔薄膜包含交联结构 具有连接到其至少一部分并具有周期性排列的孔的酸基的金属 - 氧骨架和形成在该质子导电膜上的多孔导电材料层（17）。

公开(公告)号：US20060263660A1

公开(公告)日：2006-11-23

申请号：US10570723

申请日：2004-09-10

申请人： Masaki Takaoka ,  Akira Kamisawa ,  Norikazu Nishiyama

发明人： Masaki Takaoka ,  Akira Kamisawa ,  Norikazu Nishiyama

IPC分类号： H01M8/10 ,  C08J5/22

CPC分类号： H01B1/122 ,  H01M4/92 ,  H01M4/926 ,  H01M8/0289 ,  H01M8/1037 ,  H01M8/1074 ,  H01M8/109 ,  Y02P70/56

摘要： An object of the present invention is to provide a stable protonically-conductive membrane for fuel cell having a high reliability. Another object of the present invention is to provide a high efficiency fuel cell having a high mechanical strength which operates over an extended period of time. The protonically-conductive membrane (ionically-conductive membrane) of the present invention is formed by a mesoporous thin film comprising as a main component a crosslinked structure having a metal-oxygen skeleton having an acid group connected to at least a part thereof and having pores (3) periodically aligned therein.

摘要翻译： 本发明的目的是提供一种具有高可靠性的用于燃料电池的稳定的质子传导膜。 本发明的另一个目的是提供一种具有高机械强度的高效率燃料电池，其在长时间内运行。 本发明的质子传导性膜（离子导电膜）由介孔性薄膜形成，该介孔性薄膜以主要成分为具有金属 - 氧骨架的交联结构，所述金属 - 氧骨架具有与其至少一部分连接的酸基且具有孔 （3）。

公开(公告)号：US20100102368A1

公开(公告)日：2010-04-29

申请号：US12525357

申请日：2008-02-01

申请人： Osamu Matsushima ,  Masaki Takaoka ,  Kenichi Miyazaki ,  Shogo Ishizuka ,  Keiichiro Sakurai ,  Shigeru Niki

发明人： Osamu Matsushima ,  Masaki Takaoka ,  Kenichi Miyazaki ,  Shogo Ishizuka ,  Keiichiro Sakurai ,  Shigeru Niki

IPC分类号： H01L31/032 ,  H01L31/18

CPC分类号： H01L31/18 ,  H01L27/14632 ,  H01L27/14665 ,  H01L27/14687 ,  H01L31/0322

摘要： A solid state imaging device with an easy structure in which have the high sensitivity which reaches the wide wavelength region from visible light to near infrared light wavelength region, and dark current is reduced, and a fabrication method for the same, are provided.A solid state imaging device and a fabrication method for the same, the solid state imaging device comprising: a circuit unit (30) formed on a substrate; and a photoelectric conversion unit (28) including a lower electrode layer (25) placed on the circuit unit (30), a compound semiconductor thin film (24) of chalcopyrite structure which is placed on the lower electrode layer (25) and functions as an optical absorption layer, and an optical transparent electrode layer (26) placed on the compound semiconductor thin film (24), wherein the lower electrode layer (25), the compound semiconductor thin film (24), and the optical transparent electrode layer (26) are laminated one after another on the circuit unit (30).

摘要翻译： 具有容易结构的固态成像装置具有从可见光到近红外光波长区域到达宽波长区域的高灵敏度，并且暗电流降低，并且提供了其制造方法。 一种固态成像装置及其制造方法，所述固态成像装置包括：形成在基板上的电路单元（30）; 以及包括放置在电路单元（30）上的下电极层（25）的光电转换单元（28），放置在下电极层（25）上的黄铜矿结构的化合物半导体薄膜（24） 光吸收层和放置在化合物半导体薄膜（24）上的光透明电极层（26），其中下电极层（25），化合物半导体薄膜（24）和光透明电极层 26）在电路单元（30）上依次层叠。