公开(公告)号：US08487191B2

公开(公告)日：2013-07-16

申请号：US13141730

申请日：2009-12-22

申请人： Nobuhito Makino ,  Hajime Inazumi ,  Taku Yoshida

发明人： Nobuhito Makino ,  Hajime Inazumi ,  Taku Yoshida

IPC分类号： H05K1/00 ,  B32B15/08

CPC分类号： B32B15/08 ,  B32B7/12 ,  B32B15/20 ,  B32B27/16 ,  B32B27/281 ,  B32B2307/202 ,  B32B2307/538 ,  B32B2307/546 ,  B32B2307/732 ,  H05K1/0346 ,  H05K3/388 ,  H05K2201/0154 ,  H05K2203/095 ,  H05K2203/1545 ,  Y10T428/12569

摘要： An adhesive-free flexible laminate formed from a polyimide film in which at least one surface has been plasma treated, a tie-coat layer formed on the surface of the plasma-treated polyimide film, a metal seed layer made of either copper or copper alloy and which is formed on the tie-coat layer, and a metal conductive layer made of either copper or copper alloy and which is formed on the metal seed layer, wherein the atomic percent of Cu inclusion in the tie-coat layer is 0.5 at % or less. Consequently, provided is a flexible laminate capable of effectively inhibiting the deterioration of the peel strength upon producing a flexible laminate (in particular a two-layer metalizing laminate).

摘要翻译： 由聚酰亚胺膜形成的无粘合剂柔性层压体，其中至少一个表面经过等离子体处理，形成在等离子体处理的聚酰亚胺膜的表面上的粘结层，由铜或铜合金制成的金属籽晶层 并且在所述连接层上形成有由铜或铜合金构成的金属导电层，所述金属导电层形成在所述金属种子层上，其中所述连接层中的Cu夹杂物的原子百分比为0.5原子％ 或更少。 因此，提供了一种柔性层压体，其能够有效地抑制柔性层压体（特别是两层金属化层压体）的剥离强度的劣化。

公开(公告)号：US20120012367A1

公开(公告)日：2012-01-19

申请号：US13141730

申请日：2009-12-22

申请人： Nobuhito Makino ,  Hajime Inazumi ,  Taku Yoshida

发明人： Nobuhito Makino ,  Hajime Inazumi ,  Taku Yoshida

IPC分类号： B32B15/08 ,  H05K1/00

CPC分类号： B32B15/08 ,  B32B7/12 ,  B32B15/20 ,  B32B27/16 ,  B32B27/281 ,  B32B2307/202 ,  B32B2307/538 ,  B32B2307/546 ,  B32B2307/732 ,  H05K1/0346 ,  H05K3/388 ,  H05K2201/0154 ,  H05K2203/095 ,  H05K2203/1545 ,  Y10T428/12569

摘要： An adhesive-free flexible laminate formed from a polyimide film in which at least one surface has been plasma treated, a tie-coat layer formed on the surface of the plasma-treated polyimide film, a metal seed layer made of either copper or copper alloy and which is formed on the tie-coat layer, and a metal conductive layer made of either copper or copper alloy and which is formed on the metal seed layer, wherein the atomic percent of Cu inclusion in the tie-coat layer is 0.5 at % or less. Consequently, provided is a flexible laminate capable of effectively inhibiting the deterioration of the peel strength upon producing a flexible laminate (in particular a two-layer metalizing laminate).

摘要翻译： 由聚酰亚胺膜形成的无粘合剂柔性层压体，其中至少一个表面经过等离子体处理，形成在等离子体处理的聚酰亚胺膜的表面上的粘结层，由铜或铜合金制成的金属籽晶层 并且在所述连接层上形成有由铜或铜合金构成的金属导电层，所述金属导电层形成在所述金属种子层上，其中所述连接层中的Cu夹杂物的原子百分比为0.5原子％ 或更少。 因此，提供了一种柔性层压体，其能够有效地抑制柔性层压体（特别是两层金属化层压体）的剥离强度的劣化。

公开(公告)号：US20110003169A1

公开(公告)日：2011-01-06

申请号：US12865885

申请日：2008-12-25

申请人： Nobuhito Makino ,  Akito Hokura ,  Hajime Inazumi

发明人： Nobuhito Makino ,  Akito Hokura ,  Hajime Inazumi

IPC分类号： B32B15/08

CPC分类号： H05K3/388 ,  H05K1/0346 ,  H05K3/381 ,  H05K2201/0154 ,  H05K2203/095 ,  Y10T428/12569

摘要： Provided is a non-adhesive flexible laminate comprising a polyimide film at least one surface of which has been plasma-treated, a tie-coat layer formed on the plasma-treated surface, a metal seed layer formed on the tie-coat layer, and a metal conductor layer formed on the metal seed layer, wherein a ratio ρp/ρt of actual density ρp to theoretical density ρt of the tie-coat layer satisfies ρp/ρt>0.6. The invention aims to improve the adhesion between the metal layer and the polyimide film of the non-adhesive flexible laminate (in particular a two-layered metalizing laminate).

摘要翻译： 提供了一种不粘性柔性层压体，其包括至少一个表面经过等离子体处理的聚酰亚胺膜，形成在等离子体处理表面上的粘结层，形成在粘结层上的金属种子层，以及 形成在金属种子层上的金属导体层，其中实心密度与理论密度的比值与结合层的理论密度之比满足r≥0.6。 本发明旨在改善非粘性柔性层压材料（特别是两层金属层压板）的金属层与聚酰亚胺膜之间的粘附性。

公开(公告)号：US09951412B2

公开(公告)日：2018-04-24

申请号：US13809189

申请日：2011-07-27

申请人： Kenichi Nagata ,  Nobuhito Makino

发明人： Kenichi Nagata ,  Nobuhito Makino

IPC分类号： C23C14/00 ,  C23C14/34 ,  C21D1/74 ,  C21D3/06 ,  C22C14/00 ,  C22F1/00 ,  C22F1/18 ,  C22C27/02 ,  H01J37/34

CPC分类号： C23C14/34 ,  C21D1/74 ,  C21D3/06 ,  C22C14/00 ,  C22C27/02 ,  C22F1/00 ,  C22F1/18 ,  C22F1/183 ,  C23C14/3414 ,  C23C14/3471 ,  H01J37/3426 ,  H01J37/3464 ,  H01J37/3491 ,  H01J37/3497 ,  Y10T29/49865

摘要： Provided is a sputtering target and/or a coil disposed at the periphery of a plasma-generating region for confining plasma. The target and/or the coil has a surface to be eroded having a hydrogen content of 500 μL/cm2 or less. In dealing with reduction in the hydrogen content of the surface of the target and/or the coil, the process of producing the target and/or the coil, in particular, the conditions for heating the surface of the target and/or the coil, which is thought to be cause of hydrogen occlusion, are appropriately regulated. As a result, hydrogen occlusion at the surface of the target can be reduced, and the degree of vacuum during sputtering can be improved. Thus, the present invention provides a target and/or a coil that has a uniform and fine structure, makes plasma stable, and allows a film to be formed with excellent uniformity and provides a method of producing the target and/or the coil.

公开(公告)号：US20140158532A1

公开(公告)日：2014-06-12

申请号：US14235865

申请日：2012-09-05

申请人： Kenichi Nagata ,  Tomio Otsuki ,  Takeo Okabe ,  Nobuhito Makino ,  Atsushi Fukushima

发明人： Kenichi Nagata ,  Tomio Otsuki ,  Takeo Okabe ,  Nobuhito Makino ,  Atsushi Fukushima

IPC分类号： C23C14/14

CPC分类号： C23C14/14 ,  C22C9/05 ,  C23C14/3414 ,  H01J37/3426

摘要： Provided is a high-purity copper-manganese-alloy sputtering target comprising 0.05 to 20 wt. % of Mn, 2 wt ppm or less of C, and the remainder being Cu and inevitable impurities, wherein in formation of a film on a wafer by sputtering the target, the number of particles composed of C, at least one element selected from Mn, Si, and Mg, or a compound composed of C and at least one element selected from Mn, Si, and Mg and having a diameter of 0.20 μm or more is 30 or less on average. Particle generation during sputtering can be effectively suppressed by thus adding an appropriate amount of Mn element to copper and controlling the amount of carbon. In particular, a high-purity copper-manganese-alloy sputtering target that is useful for forming semiconductor copper alloy line having a self-diffusion suppression function is provided.

摘要翻译： 提供了一种高纯度铜 - 锰合金溅射靶，其包含0.05-20重量％ Mn为2重量ppm以下，余量为Cu和不可避免的杂质，其中，在通过溅射靶材在晶片上形成膜时，由C组成的微粒数，选自Mn中的至少一种元素 ，Si和Mg，或由C和至少一种选自Mn，Si和Mg的元素组成的化合物，直径为0.20μm以上的化合物的平均值为30以下。 通过向铜中添加适量的Mn元素并控制碳的量，能够有效地抑制溅射时的粒子产生。 特别地，提供了可用于形成具有自扩散抑制功能的半导体铜合金线的高纯度铜 - 锰合金溅射靶。

公开(公告)号：US20140097084A1

公开(公告)日：2014-04-10

申请号：US14118591

申请日：2012-09-06

申请人： Kenichi Nagata ,  Tomio Otsuki ,  Takeo Okabe ,  Nobuhito Makino ,  Atsushi Fukushima

发明人： Kenichi Nagata ,  Tomio Otsuki ,  Takeo Okabe ,  Nobuhito Makino ,  Atsushi Fukushima

IPC分类号： C23C14/34

CPC分类号： C23C14/3414 ,  C22C9/05 ,  C22F1/00 ,  C22F1/08

摘要： Provided is a high-purity copper-manganese-alloy sputtering target comprising 0.05 to 20 wt % of Mn and the remainder being Cu and inevitable impurities. The high-purity copper-manganese-alloy sputtering target is characterized in that the in-plane variation (CV value) in Mn concentration of the target is 3% or less. It is thus possible to form a thin film having excellent uniformity by adding an appropriate amount of a Mn element to copper and reducing the in-plane variation of the sputtering target. In particular, there is provided a high-purity copper-manganese-alloy sputtering target which is useful for improving the yield and the reliability of semiconductor products which are making progress in a degree of refinement and integration.

摘要翻译： 提供了包含0.05〜20重量％的Mn，余量为Cu和不可避免的杂质的高纯度铜 - 锰合金溅射靶。 高纯度铜锰合金溅射靶的特征在于靶的Mn浓度的面内变化（CV值）为3％以下。 因此，通过向铜中添加适量的Mn元素并降低溅射靶的面内变化，可以形成具有优异均匀性的薄膜。 特别是提供了一种高纯度的铜 - 锰合金溅射靶，其可用于提高在细化和集成度方面取得进步的半导体产品的产率和可靠性。

公开(公告)号：US20120135160A1

公开(公告)日：2012-05-31

申请号：US13355603

申请日：2012-01-23

申请人： Nobuhito Makino

发明人： Nobuhito Makino

IPC分类号： B05D5/12 ,  B05D3/02 ,  B05D3/10

CPC分类号： H05K3/388 ,  H05K1/0346 ,  H05K3/381 ,  H05K2201/0154 ,  H05K2203/095 ,  Y10T428/12472

摘要： A non-adhesive-type flexible laminate including a polyimide film with at least one surface thereof being plasma-treated, a tie-coat layer formed on the plasma-treated surface, and a metal conductor layer fanned on the tie-coat layer is provided. A ratio (T/Rz) of a tie-coat layer thickness (T) to a 10-point mean roughness (Rz) of the plasma-treated polyimide film surface is made to be 2 or more. This improves initial adhesion, which is an indicator of adhesion strength of the non-adhesive-type flexible laminate (in particular, a two-layered, flexible laminate), and also increases adhesion of the laminate after heat aging (i.e., after being allowed to stand for 168 hours at 150° C. for 168 hours in the atmosphere). A method of manufacturing the laminate is also provided.

摘要翻译： 提供一种非粘合型柔性层压体，其包括具有至少一个表面的聚酰亚胺膜进行等离子体处理，形成在等离子体处理表面上的接合层和在接合层上扇形的金属导体层 。 将等离子体处理的聚酰亚胺膜表面的粘结层厚度（T）与10点平均粗糙度（Rz）的比率（T / Rz）设定为2以上。 这提高了初始粘合性，其是非粘合型柔性层压材料（特别是两层柔性层压材料）的粘合强度的指示剂，并且还增加了热老化后的层压体的粘附性（即，在允许之后） 在大气中在150℃下放置168小时168小时）。 还提供了制造层压板的方法。

公开(公告)号：US20100323215A1

公开(公告)日：2010-12-23

申请号：US12525871

申请日：2008-02-01

申请人： Nobuhito Makino

发明人： Nobuhito Makino

IPC分类号： B32B15/088 ,  C09J5/02

CPC分类号： H05K3/388 ,  H05K1/0346 ,  H05K3/381 ,  H05K2201/0154 ,  H05K2203/095 ,  Y10T428/12472

摘要： The present invention relates to a non-adhesive-type flexible laminate including a polyimide film with at least one surface thereof being plasma-treated, a tie-coat layer formed on the plasma-treated surface, and a metal conductor layer formed on the tie-coat layer, wherein a proportion (T/Rz) of the tie-coat layer thickness (T) to 10-point mean roughness (Rz) of the plasma-treated polyimide film surface is 2 or more. An object of the invention is not only to improve initial adhesion which is an indicator of adhesion strength of the non-adhesive-type flexible laminate (in particular, a two-layered, flexible laminate), but also to increase adhesion of the laminate after heat aging (after being allowed to stand for 168 hours at 150° C. for 168 hours in the atmosphere).

摘要翻译： 本发明涉及一种非粘合型柔性层压体，其包括具有等离子体处理的至少一个表面的聚酰亚胺膜，形成在等离子体处理表面上的粘结层以及形成在该领带上的金属导体层 涂层厚度（T）与等离子体处理的聚酰亚胺膜表面的10点平均粗糙度（Rz）的比例（T / Rz）为2以上。 本发明的目的不仅是提高作为非粘合型柔性层压体（特别是两层柔性层压体）的粘合强度的指标的初始粘合性，而且还增加层压体之后的粘合力 热老化（在大气中在150℃下放置168小时168小时）。

公开(公告)号：US20070163504A1

公开(公告)日：2007-07-19

申请号：US10589348

申请日：2005-02-15

申请人： Eiichi Shimizu ,  Nobuhito Makino ,  Manabu Kawabe

发明人： Eiichi Shimizu ,  Nobuhito Makino ,  Manabu Kawabe

IPC分类号： C23C16/00

CPC分类号： C30B25/10 ,  C23C16/4583

摘要： It is to provide a vapor phase growth apparatus which can perform vapor phase growth of a thin film having a good uniformity throughout a surface of a wafer. The vapor phase growth apparatus includes at least a sealable reactor, a wafer containing member (wafer holder) installed within the reactor and having a wafer mounting portion (pocket hole) on a surface thereof for holding a wafer, a gas supply member (gas inlet pipe) for supplying raw material gas towards the wafer, a heating member (heater) for heating the wafer, and a heat uniformizing member (susceptor) for holding the wafer containing member and uniformizing heat from the heating member, wherein raw material gas is supplied into the reactor in a high temperature environment while heating the wafer by using the heating member via the heat uniformizing member and the wafer containing member, to form a film grown on a surface of the wafer, and wherein a recess portion depressed in a dome shape is formed at a back side of the wafer containing member.

摘要翻译： 本发明提供一种气相生长装置，其能够在整个晶片的表面上实现均匀性均匀的薄膜的气相生长。 气相生长装置至少包括可密封的反应器，安装在反应器内的晶片容纳构件（晶片保持器），并且在其表面上具有用于保持晶片的晶片安装部分（凹穴），气体供给构件 用于向晶片供应原料气体的加热构件（加热器），用于保持晶片容纳构件的热均匀化构件（基座），并且来自加热构件的均匀化热量，其中提供原料气体 在高温环境下进入反应器，同时通过使用加热构件经由热均匀化构件和晶片容纳构件加热晶片，以形成在晶片的表面上生长的膜，并且其中凹陷的圆顶形状的凹部 形成在晶片容纳构件的背面。

公开(公告)号：US09704695B2

公开(公告)日：2017-07-11

申请号：US14348174

申请日：2012-09-12

申请人： Kenichi Nagata ,  Tomio Otsuki ,  Takeo Okabe ,  Nobuhito Makino ,  Atsushi Fukushima

发明人： Kenichi Nagata ,  Tomio Otsuki ,  Takeo Okabe ,  Nobuhito Makino ,  Atsushi Fukushima

IPC分类号： C23C14/35 ,  H01J37/34 ,  C22C9/05 ,  C23C14/34 ,  B21D53/00

CPC分类号： H01J37/3435 ,  B21D53/00 ,  C22C9/05 ,  C23C14/3407 ,  C23C14/3414 ,  H01J37/3414 ,  H01J37/3426

摘要： A backing plate integrated sputtering target includes a flange part having a Vicker's hardness (Hv) of 90 or more and a 0.2% yield stress of 6.98×107 N/m2 or more. Enhancing the mechanical strength of only the flange part of the target inhibits the target from being deformed during sputtering, and further, does not vary the original sputtering characteristics. Consequently, the target can form a thin film having excellent uniformity. This can improve the yield and the reliability of semiconductor products, which have been progressing in miniaturization and integration.