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    Bridge structure
    3.
    发明授权
    Bridge structure 有权
    桥梁结构

    公开(公告)号：US08975674B2

    公开(公告)日：2015-03-10

    申请号：US13672971

    申请日：2012-11-09

    Applicant: National Applied Research Laboratories

    Inventor： Chun-Lin Chu ,  Shu-Han Hsu ,  Guang-Li Luo ,  Chee-Wee Liu

    IPC: H01L27/088 ,  H01L29/12 ,  H01L29/267 ,  B82Y10/00 ,  H01L29/06 ,  H01L29/66 ,  H01L29/775 ,  H01L29/32 ,  H01L29/49 ,  H01L29/51

    CPC classification number: H01L29/0673 ,  B82Y10/00 ,  H01L29/32 ,  H01L29/42392 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696

    Abstract: A bridge structure for use in a semiconductor device includes a semiconductor substrate and a semiconductor structure layer. The semiconductor structure layer is formed on a surface of the semiconductor substrate and a lattice difference is formed between the semiconductor structure layer and the semiconductor substrate. The semiconductor structure layer includes at least a first block, at least a second block and at least a third block, wherein the first block and the third block are bonded on the surface of the semiconductor substrate, the second block is floated over the semiconductor substrate and connected with the first block and the third block.

    Abstract translation: 用于半导体器件的桥结构包括半导体衬底和半导体结构层。 半导体结构层形成在半导体衬底的表面上，并且在半导体结构层和半导体衬底之间形成晶格差。 半导体结构层至少包括第一块，至少第二块和至少第三块，其中第一块和第三块结合在半导体衬底的表面上，第二块浮在半导体衬底上 并与第一块和第三块连接。

    GERMANIUM STRUCTURE, GERMANIUM FIN FIELD EFFECT TRANSISTOR STRUCTURE AND GERMANIUM COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TRANSISTOR STRUCTURE
    4.
    发明申请
    GERMANIUM STRUCTURE, GERMANIUM FIN FIELD EFFECT TRANSISTOR STRUCTURE AND GERMANIUM COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TRANSISTOR STRUCTURE 审中-公开
    锗结构，锗元素场效应晶体结构和锗复合金属氧化物半导体晶体管结构

    公开(公告)号：US20140374834A1

    公开(公告)日：2014-12-25

    申请号：US13922354

    申请日：2013-06-20

    Applicant: National Applied Research Laboratories

    Inventor： Guang-Li Luo ,  Chee-Wee Liu ,  Shu-Han Hsu ,  Chun-Lin Chu ,  Chih-Hung Lo

    IPC: H01L27/092

    CPC classification number: H01L27/0924 ,  H01L21/02381 ,  H01L21/02532 ,  H01L29/1054 ,  H01L29/66795 ,  H01L29/785 ,  Y10T428/12528

    Abstract: A germanium (Ge) structure includes a substrate, a Ge layer and at least a Ge spatial structure. The Ge layer is formed on the substrate, and a surface of the Ge layer is a Ge {110} lattice plane. The Ge spatial structure is formed in the Ge layer and includes a top surface and a sidewall surface, wherein the top surface is a Ge {110} lattice plane and the sidewall surface is perpendicular to the top surface. An axis is formed at a junction of the sidewall surface and the top surface, and an extensive direction of the axis is parallel to a Ge [112] lattice vector on the surface of the Ge layer, therefore the sidewall surface is a Ge {111} lattice plane. Because Ge {111} surface channels have very high electron mobility, this Ge spatial structure may be applied for fabricating high-performance Ge semiconductor devices.

    Abstract translation: 锗（Ge）结构包括基底，Ge层和至少Ge空间结构。 Ge层形成在基板上，Ge层的表面是Ge {110}晶格面。 Ge空间结构形成在Ge层中并且包括顶表面和侧壁表面，其中顶表面是Ge {110}晶格平面，并且侧壁表面垂直于顶表面。 在侧壁表面和顶表面的接合处形成轴线，并且轴的宽大方向平行于Ge层表面上的Ge [112]晶格矢量，因此侧壁表面是Ge {111 }晶格面。 由于Ge {111}表面通道具有非常高的电子迁移率，所以该Ge空间结构可用于制造高性能Ge半导体器件。

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