公开(公告)号：US20110175142A1

公开(公告)日：2011-07-21

申请号：US13120382

申请日：2009-08-26

申请人： Naohiro Tsurumi ,  Satoshi Nakazawa ,  Tetsuzo Ueda

发明人： Naohiro Tsurumi ,  Satoshi Nakazawa ,  Tetsuzo Ueda

IPC分类号： H01L29/80

CPC分类号： H01L29/1075 ,  H01L23/481 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/4175 ,  H01L29/7787 ,  H01L2924/0002 ,  H01L2924/00

摘要： A nitride semiconductor device includes a first nitride semiconductor layer; a second nitride semiconductor layer formed on the first nitride semiconductor layer, and having a wider bad gap than the first nitride semiconductor layer; a source electrode, a drain electrode, and a gate electrode, which are formed on the second nitride semiconductor layer; a high resistive layer formed lower than the first nitride semiconductor layer; a conductive layer formed under and in contact with the high resistive layer; a lower insulating layer formed under the conductive layer; and a bias terminal electrically connected to the conductive layer.

摘要翻译： 氮化物半导体器件包括第一氮化物半导体层; 形成在所述第一氮化物半导体层上并且具有比所述第一氮化物半导体层更宽的不良间隙的第二氮化物半导体层; 源电极，漏电极和栅电极，形成在第二氮化物半导体层上; 形成为低于第一氮化物半导体层的高电阻层; 形成在所述高电阻层之下并与所述高电阻层接触的导电层; 形成在导电层下面的下绝缘层; 以及电连接到所述导电层的偏置端子。

公开(公告)号：US07838904B2

公开(公告)日：2010-11-23

申请号：US12023461

申请日：2008-01-31

申请人： Kazushi Nakazawa ,  Satoshi Nakazawa ,  Tetsuzo Ueda ,  Tsuyoshi Tanaka ,  Masahiro Hikita

发明人： Kazushi Nakazawa ,  Satoshi Nakazawa ,  Tetsuzo Ueda ,  Tsuyoshi Tanaka ,  Masahiro Hikita

IPC分类号： H01L29/778

CPC分类号： H01L29/7787 ,  H01L29/1029 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/4236 ,  H01L29/66462

摘要： In FET, a second nitride semiconductor layer is provided on a first nitride semiconductor layer, and a source electrode and a drain electrode are each provided to have at least a portion thereof in contact with the second nitride semiconductor layer. A concave portion is formed in the upper surface of the second nitride semiconductor layer to be located between the source electrode and the drain electrode. A gate electrode is provided over the concave portion to cover the opening of the concave portion.

摘要翻译： 在FET中，第二氮化物半导体层设置在第一氮化物半导体层上，并且源电极和漏电极分别设置成使其至少一部分与第二氮化物半导体层接触。 在第二氮化物半导体层的上表面上形成凹部，位于源电极和漏电极之间。 在所述凹部上设置有栅电极以覆盖所述凹部的开口。

公开(公告)号：US07714359B2

公开(公告)日：2010-05-11

申请号：US11355939

申请日：2006-02-17

申请人： Satoshi Nakazawa ,  Tetsuzo Ueda ,  Tsuyoshi Tanaka

发明人： Satoshi Nakazawa ,  Tetsuzo Ueda ,  Tsuyoshi Tanaka

IPC分类号： H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/365

摘要： A field effect transistor includes a nitride semiconductor layer; an InxAlyGa1-x-yN layer (wherein 0

摘要翻译： 场效应晶体管包括氮化物半导体层; 形成在氮化物半导体层上的In x Al y Ga 1-x-y N层（其中0

公开(公告)号：US07465968B2

公开(公告)日：2008-12-16

申请号：US11600067

申请日：2006-11-16

申请人： Tetsuzo Ueda ,  Satoshi Nakazawa ,  Tatsuo Morita

发明人： Tetsuzo Ueda ,  Satoshi Nakazawa ,  Tatsuo Morita

IPC分类号： H01L29/737

CPC分类号： H01L29/452 ,  H01L29/045 ,  H01L29/0692 ,  H01L29/2003 ,  H01L29/8122

摘要： A semiconductor device includes: a first nitride semiconductor layer having at least one projection on an upper surface thereof; a second nitride semiconductor layer formed on a top surface of the projection of the first nitride semiconductor layer and having a higher carrier concentration than the first nitride semiconductor layer; a first electrode formed on the second nitride semiconductor layer so as to overhang like a canopy and functioning as one of a source and a drain; and a second electrode formed to the side of the projection on the first nitride semiconductor layer and functioning as a gate.

摘要翻译： 半导体器件包括：在其上表面上具有至少一个突起的第一氮化物半导体层; 第二氮化物半导体层，其形成在所述第一氮化物半导体层的所述突起的顶表面上，并且具有比所述第一氮化物半导体层更高的载流子浓度; 第一电极，形成在第二氮化物半导体层上，以便像顶盖一样悬垂并用作源极和漏极之一; 以及第二电极，其形成在第一氮化物半导体层上的突起侧并用作栅极。

公开(公告)号：US20060244003A1

公开(公告)日：2006-11-02

申请号：US11410920

申请日：2006-04-26

申请人： Tetsuzo Ueda ,  Satoshi Nakazawa ,  Daisuke Ueda ,  Toshiyuki Takizawa

发明人： Tetsuzo Ueda ,  Satoshi Nakazawa ,  Daisuke Ueda ,  Toshiyuki Takizawa

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/1035 ,  H01L33/06 ,  H01S5/322 ,  H01S5/34333 ,  Y02E10/544

摘要： A nitride semiconductor device includes an active layer including a first nitride semiconductor layer and a second nitride semiconductor layer which are periodically stacked, the second nitride semiconductor layer having a different composition from a composition of the first nitride semiconductor layer. An energy at a lower edge of a conduction band in the first nitride semiconductor layer is lower than an energy at a lower edge of a conduction band in the second nitride semiconductor layer, and an energy at an upper edge of a valence band in the first nitride semiconductor layer is lower than an energy at an upper edge of a valence band in the second nitride semiconductor layer.

摘要翻译： 氮化物半导体器件包括包含周期性堆叠的第一氮化物半导体层和第二氮化物半导体层的有源层，所述第二氮化物半导体层与第一氮化物半导体层的组成不同。 在第一氮化物半导体层中的导带的下边缘处的能量低于第二氮化物半导体层中的导带的下边缘处的能量，并且第一氮化物半导体层中的导带的上边缘处的能量 氮化物半导体层比在第二氮化物半导体层中的价带的上边缘处的能量低。

公开(公告)号：US20060203871A1

公开(公告)日：2006-09-14

申请号：US11371249

申请日：2006-03-09

申请人： Tetsuzo Ueda ,  Satoshi Nakazawa ,  Toshiyuki Takizawa

发明人： Tetsuzo Ueda ,  Satoshi Nakazawa ,  Toshiyuki Takizawa

IPC分类号： H01S5/00

CPC分类号： H01S5/32341

摘要： A nitride semiconductor light emitting device includes: an active layer formed of a first III-V nitride semiconductor, the active layer having opposite surfaces which face each other; an alloy crystal layer formed of InxAlyGa1-x-yN (0

摘要翻译： 氮化物半导体发光器件包括：由第一III-V族氮化物半导体形成的有源层，所述有源层具有彼此相对的相对表面; 由Al x Al 2 O 3（0

公开(公告)号：US20100167478A1

公开(公告)日：2010-07-01

申请号：US12723069

申请日：2010-03-12

申请人： Satoshi NAKAZAWA ,  Tetsuzo Ueda

发明人： Satoshi NAKAZAWA ,  Tetsuzo Ueda

IPC分类号： H01L21/335

CPC分类号： H01L29/7783 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787

摘要： A field effect transistor includes a nitride semiconductor layered structure that is formed on a substrate and includes a capping layer made of a compound represented by a general formula of InxAlyGa1-yN (wherein 0

摘要翻译： 场效应晶体管包括氮化物半导体层状结构，其形成在基板上，并且包括由通式In x Al y Ga 1-y N表示的化合物制成的覆盖层（其中0

公开(公告)号：US20070117355A1

公开(公告)日：2007-05-24

申请号：US11600067

申请日：2006-11-16

申请人： Tetsuzo Ueda ,  Satoshi Nakazawa ,  Tatsuo Morita

发明人： Tetsuzo Ueda ,  Satoshi Nakazawa ,  Tatsuo Morita

IPC分类号： H01L21/20

CPC分类号： H01L29/452 ,  H01L29/045 ,  H01L29/0692 ,  H01L29/2003 ,  H01L29/8122

摘要： A semiconductor device includes: a first nitride semiconductor layer having at least one projection on an upper surface thereof; a second nitride semiconductor layer formed on a top surface of the projection of the first nitride semiconductor layer and having a higher carrier concentration than the first nitride semiconductor layer; a first electrode formed on the second nitride semiconductor layer so as to overhang like a canopy and functioning as one of a source and a drain; and a second electrode formed to the side of the projection on the first nitride semiconductor layer and functioning as a gate.

摘要翻译： 半导体器件包括：在其上表面上具有至少一个突起的第一氮化物半导体层; 第二氮化物半导体层，其形成在所述第一氮化物半导体层的所述突起的顶表面上，并且具有比所述第一氮化物半导体层更高的载流子浓度; 第一电极，形成在第二氮化物半导体层上，以便像顶盖一样悬垂并用作源极和漏极之一; 以及第二电极，其形成在第一氮化物半导体层上的突起侧并用作栅极。

公开(公告)号：US07705371B2

公开(公告)日：2010-04-27

申请号：US11730615

申请日：2007-04-03

申请人： Satoshi Nakazawa ,  Tetsuzo Ueda

发明人： Satoshi Nakazawa ,  Tetsuzo Ueda

IPC分类号： H01L29/772

CPC分类号： H01L29/7783 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787

摘要： A field effect transistor includes a nitride semiconductor layered structure that is formed on a substrate and includes a capping layer made of a compound represented by a general formula of InxAlyGa1-yN (wherein 0

摘要翻译： 场效应晶体管包括氮化物半导体层叠结构，其形成在基板上，并且包括由通式In x Al y Ga 1-y N表示的化合物制成的覆盖层（其中0

公开(公告)号：US07425732B2

公开(公告)日：2008-09-16

申请号：US11410920

申请日：2006-04-26

申请人： Tetsuzo Ueda ,  Satoshi Nakazawa ,  Daisuke Ueda ,  Toshiyuki Takizawa

发明人： Tetsuzo Ueda ,  Satoshi Nakazawa ,  Daisuke Ueda ,  Toshiyuki Takizawa

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/1035 ,  H01L33/06 ,  H01S5/322 ,  H01S5/34333 ,  Y02E10/544

摘要： A nitride semiconductor device includes an active layer including a first nitride semiconductor layer and a second nitride semiconductor layer which are periodically stacked, the second nitride semiconductor layer having a different composition from a composition of the first nitride semiconductor layer. An energy at a lower edge of a conduction band in the first nitride semiconductor layer is lower than an energy at a lower edge of a conduction band in the second nitride semiconductor layer, and an energy at an upper edge of a valence band in the first nitride semiconductor layer is lower than an energy at an upper edge of a valence band in the second nitride semiconductor layer.

摘要翻译： 氮化物半导体器件包括包含周期性堆叠的第一氮化物半导体层和第二氮化物半导体层的有源层，所述第二氮化物半导体层与第一氮化物半导体层的组成不同。 在第一氮化物半导体层中的导带的下边缘处的能量低于第二氮化物半导体层中的导带的下边缘处的能量，并且第一氮化物半导体层中的导带的上边缘处的能量 氮化物半导体层比在第二氮化物半导体层中的价带的上边缘处的能量低。