发明授权
- 专利标题： Semiconductor device and method for fabricating the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11600067申请日： 2006-11-16
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公开(公告)号： US07465968B2公开(公告)日： 2008-12-16
- 发明人: Tetsuzo Ueda , Satoshi Nakazawa , Tatsuo Morita
- 申请人： Tetsuzo Ueda , Satoshi Nakazawa , Tatsuo Morita
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2005-335504 20051121
- 主分类号： H01L29/737
- IPC分类号： H01L29/737
摘要：
A semiconductor device includes: a first nitride semiconductor layer having at least one projection on an upper surface thereof; a second nitride semiconductor layer formed on a top surface of the projection of the first nitride semiconductor layer and having a higher carrier concentration than the first nitride semiconductor layer; a first electrode formed on the second nitride semiconductor layer so as to overhang like a canopy and functioning as one of a source and a drain; and a second electrode formed to the side of the projection on the first nitride semiconductor layer and functioning as a gate.
公开/授权文献
- US20070117355A1 Semiconductor device and method for fabricating the same 公开/授权日：2007-05-24
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