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公开(公告)号：US20200219564A1
公开(公告)日：2020-07-09
申请号：US16735643
申请日：2020-01-06
申请人： Nantero, Inc.
发明人： Claude L. Bertin , Lee Cleveland
摘要： Methods for reading and programming one or more resistive change elements within a 1-R resistive change element array are disclosed. These methods include using measurement and storage elements to measure the electrical response of one or more selected cells within an array and then comparing that stored electrical response to the electrical response of a reference element within the array to determine the resistive state of the one or more selected cells. These methods also include programming methods wherein selectable current limiting elements are used to permit or inhibit programming currents from flowing through selected and unselected cells, respectively. These methods further include programing methods that use specific biasing of array lines to provide sufficient programing currents through only selected cells.
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2.发明授权公开(公告)号：US09299430B1
公开(公告)日：2016-03-29
申请号：US14603037
申请日：2015-01-22
申请人： Nantero Inc.
发明人： Claude L. Bertin , Lee Cleveland
CPC分类号： G11C13/0069 , G11C11/5678 , G11C13/0004 , G11C13/0007 , G11C13/0011 , G11C13/0026 , G11C13/0028 , G11C13/0038 , G11C13/004 , G11C13/0061 , G11C13/025 , G11C2013/0054 , G11C2013/0078 , G11C2213/71 , G11C2213/72 , G11C2213/77
摘要： Methods for reading and programming one or more resistive change elements within a 1-R resistive change element array are disclosed. These methods include using measurement and storage elements to measure the electrical response of one or more selected cells within an array and then comparing that stored electrical response to the electrical response of a reference element within the array to determine the resistive state of the one or more selected cells. These methods also include programming methods wherein selectable current limiting elements are used to permit or inhibit programming currents from flowing through selected and unselected cells, respectively. These methods further include programming methods that use specific biasing of array lines to provide sufficient programming currents through only selected cells.
摘要翻译： 公开了用于读取和编程1-R电阻变化元件阵列内的一个或多个电阻变化元件的方法。 这些方法包括使用测量和存储元件来测量阵列内的一个或多个所选择的单元的电响应，然后将该存储的电响应与该阵列内的参考元件的电响应进行比较，以确定一个或多个 选定的单元格。 这些方法还包括编程方法，其中可选择的电流限制元件分别用于允许或禁止编程电流流过选定和未选择的单元。 这些方法还包括使用阵列线的特定偏置以通过仅选择的单元提供足够的编程电流的编程方法。
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公开(公告)号：US10937497B2
公开(公告)日：2021-03-02
申请号：US16735643
申请日：2020-01-06
申请人： Nantero, Inc.
发明人： Claude L. Bertin , Lee Cleveland
摘要： Methods for reading and programming one or more resistive change elements within a 1-R resistive change element array are disclosed. These methods include using measurement and storage elements to measure the electrical response of one or more selected cells within an array and then comparing that stored electrical response to the electrical response of a reference element within the array to determine the resistive state of the one or more selected cells. These methods also include programming methods wherein selectable current limiting elements are used to permit or inhibit programming currents from flowing through selected and unselected cells, respectively. These methods further include programing methods that use specific biasing of array lines to provide sufficient programing currents through only selected cells.
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公开(公告)号：US10529422B2
公开(公告)日：2020-01-07
申请号：US16260080
申请日：2019-01-28
申请人： Nantero, Inc.
发明人： Claude L. Bertin , Lee Cleveland
摘要： Methods for reading and programming one or more resistive change elements within a 1-R resistive change element array are disclosed. These methods include using measurement and storage elements to measure the electrical response of one or more selected cells within an array and then comparing that stored electrical response to the electrical response of a reference element within the array to determine the resistive state of the one or more selected cells. These methods also include programming methods wherein selectable current limiting elements are used to permit or inhibit programming currents from flowing through selected and unselected cells, respectively. These methods further include programing methods that use specific biasing of array lines to provide sufficient programing currents through only selected cells.
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公开(公告)号：US10192619B2
公开(公告)日：2019-01-29
申请号：US15657447
申请日：2017-07-24
申请人： Nantero, Inc.
发明人： Claude L. Bertin , Lee Cleveland
摘要： Methods for reading and programming one or more resistive change elements within a 1-R resistive change element array are disclosed. These methods include using measurement and storage elements to measure the electrical response of one or more selected cells within an array and then comparing that stored electrical response to the electrical response of a reference element within the array to determine the resistive state of the one or more selected cells. These methods also include programming methods wherein selectable current limiting elements are used to permit or inhibit programming currents from flowing through selected and unselected cells, respectively. These methods further include programming methods that use specific biasing of array lines to provide sufficient programming currents through only selected cells.
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公开(公告)号：US20190172536A1
公开(公告)日：2019-06-06
申请号：US16260080
申请日：2019-01-28
申请人： Nantero, Inc.
发明人： Claude L. Bertin , Lee Cleveland
摘要： Methods for reading and programming one or more resistive change elements within a 1-R resistive change element array are disclosed. These methods include using measurement and storage elements to measure the electrical response of one or more selected cells within an array and then comparing that stored electrical response to the electrical response of a reference element within the array to determine the resistive state of the one or more selected cells. These methods also include programming methods wherein selectable current limiting elements are used to permit or inhibit programming currents from flowing through selected and unselected cells, respectively. These methods further include programing methods that use specific biasing of array lines to provide sufficient programing currents through only selected cells.
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公开(公告)号：US20170330619A1
公开(公告)日：2017-11-16
申请号：US15657447
申请日：2017-07-24
申请人： Nantero, Inc.
发明人： Claude L. Bertin , Lee Cleveland
CPC分类号： G11C13/0069 , G11C11/5678 , G11C13/0004 , G11C13/0007 , G11C13/0011 , G11C13/0026 , G11C13/0028 , G11C13/0038 , G11C13/004 , G11C13/0061 , G11C13/025 , G11C2013/0054 , G11C2013/0078 , G11C2213/71 , G11C2213/72 , G11C2213/77
摘要： Methods for reading and programming one or more resistive change elements within a 1-R resistive change element array are disclosed. These methods include using measurement and storage elements to measure the electrical response of one or more selected cells within an array and then comparing that stored electrical response to the electrical response of a reference element within the array to determine the resistive state of the one or more selected cells. These methods also include programming methods wherein selectable current limiting elements are used to permit or inhibit programming currents from flowing through selected and unselected cells, respectively. These methods further include programing methods that use specific biasing of array lines to provide sufficient programing currents through only selected cells.
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公开(公告)号：US09715927B2
公开(公告)日：2017-07-25
申请号：US15079458
申请日：2016-03-24
申请人： Nantero Inc.
发明人： Claude L. Bertin , Lee Cleveland
CPC分类号： G11C13/0069 , G11C11/5678 , G11C13/0004 , G11C13/0007 , G11C13/0011 , G11C13/0026 , G11C13/0028 , G11C13/0038 , G11C13/004 , G11C13/0061 , G11C13/025 , G11C2013/0054 , G11C2013/0078 , G11C2213/71 , G11C2213/72 , G11C2213/77
摘要： Methods for reading and programming one or more resistive change elements within a 1-R resistive change element array are disclosed. These methods include using measurement and storage elements to measure the electrical response of one or more selected cells within an array and then comparing that stored electrical response to the electrical response of a reference element within the array to determine the resistive state of the one or more selected cells. These methods also include programming methods wherein selectable current limiting elements are used to permit or inhibit programming currents from flowing through selected and unselected cells, respectively. These methods further include programming methods that use specific biasing of array lines to provide sufficient programming currents through only selected cells.
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