公开(公告)号：US20140239471A1

公开(公告)日：2014-08-28

申请号：US13779889

申请日：2013-02-28

Applicant: NXP B.V.

Inventor： Peeradech Khunpukdee ,  Bodin Kasemset ,  Ernst Eiper ,  Christian Zenz

IPC: H01L23/495 ,  H01L21/768

CPC classification number: H01L23/495 ,  H01L21/76838 ,  H01L23/49541 ,  H01L23/49558 ,  H01L23/49582 ,  H01L23/49586 ,  H01L24/97 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Various aspects of the disclosure are directed to integrated circuit (IC) die leadframe packages. In accordance with one or more embodiments, a stainless steel leadframe apparatus has a polymer-based layer that adheres to both stainless steel and IC die encapsulation, with the stainless steel conducting signals/data between respective surfaces for communicating with the packaged IC die. In some embodiments, the apparatus includes the IC die adhered to the polymer-based layer via an adhesive, wire bonds coupled to the stainless steel leadframe for passing the signals/data, and an encapsulation epoxy that encapsulates the IC die and wire bonds.

Abstract translation: 本公开的各个方面涉及集成电路（IC）管芯引线框封装。 根据一个或多个实施例，不锈钢引线框架设备具有粘附于不锈钢和IC管芯封装的基于聚合物的层，其中不锈钢在相应表面之间传导信号/数据以与封装的IC管芯连通。 在一些实施例中，该装置包括通过粘合剂粘附到基于聚合物的层的IC管芯，耦合到用于传递信号/数据的不锈钢引线框架的引线接合，以及封装IC管芯和引线接合的封装环氧树脂。

公开(公告)号：US09536188B2

公开(公告)日：2017-01-03

申请号：US14677836

申请日：2015-04-02

Applicant: NXP B.V.

Inventor： Patrick Schoengrundner ,  Ernst Eiper ,  Christian Zenz

IPC: G06K19/06 ,  G06K19/077 ,  H01L23/00

CPC classification number: G06K19/07769 ,  G06K19/07747 ,  G06K19/07754 ,  H01L23/49855 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/83 ,  H01L24/97 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48228 ,  H01L2224/48465 ,  H01L2224/49109 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/12042 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012

Abstract: Dual-interface Integrated Circuit (IC) card components and methods for manufacturing the dual-interface IC card components are described. In an embodiment, a dual-interface IC card component includes a single-sided contact base structure, which includes a substrate with an electrical contact layer. On the single-sided contact base structure, one or more antenna contact leads are attached to the single-sided contact base structure to form a dual-interface contact structure by applying an adhesive material to partially cover an overlapping area of the at least one antenna contact and the substrate, which is a component of a dual-interface IC card. Other embodiments are also described.

Abstract translation: 描述了用于制造双接口IC卡组件的双接口集成电路（IC）卡组件和方法。 在一个实施例中，双接口IC卡部件包括单面接触基部结构，其包括具有电接触层的基板。 在单面接触基底结构上，一个或多个天线接触引线附接到单面接触基底结构以通过施加粘合剂材料以部分地覆盖至少一个天线的重叠区域而形成双界面接触结构 接触和基板，它是双接口IC卡的组件。 还描述了其它实施例。

公开(公告)号：US08884415B2

公开(公告)日：2014-11-11

申请号：US13779889

申请日：2013-02-28

Applicant: NXP B.V.

Inventor： Peeradech Khunpukdee ,  Bodin Kasemset ,  Ernst Eiper ,  Christian Zenz

IPC: H01L23/495 ,  H01L21/768

CPC classification number: H01L23/495 ,  H01L21/76838 ,  H01L23/49541 ,  H01L23/49558 ,  H01L23/49582 ,  H01L23/49586 ,  H01L24/97 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Various aspects of the disclosure are directed to integrated circuit (IC) die leadframe packages. In accordance with one or more embodiments, a stainless steel leadframe apparatus has a polymer-based layer that adheres to both stainless steel and IC die encapsulation, with the stainless steel conducting signals/data between respective surfaces for communicating with the packaged IC die. In some embodiments, the apparatus includes the IC die adhered to the polymer-based layer via an adhesive, wire bonds coupled to the stainless steel leadframe for passing the signals/data, and an encapsulation epoxy that encapsulates the IC die and wire bonds.

Abstract translation: 本公开的各个方面涉及集成电路（IC）管芯引线框封装。 根据一个或多个实施例，不锈钢引线框架设备具有粘附于不锈钢和IC管芯封装的基于聚合物的层，其中不锈钢在相应表面之间传导信号/数据以与封装的IC管芯连通。 在一些实施例中，该装置包括通过粘合剂粘附到基于聚合物的层的IC管芯，耦合到用于传递信号/数据的不锈钢引线框架的引线接合，以及封装IC管芯和引线接合的封装环氧树脂。

公开(公告)号：US11721586B2

公开(公告)日：2023-08-08

申请号：US16721083

申请日：2019-12-19

Applicant: NXP B.V.

Inventor： Antonius Hendrikus Jozef Kamphuis ,  Ernst Eiper ,  Johannes Cobussen ,  Chantal Dijkstra

IPC: H01L21/82 ,  G01R31/28 ,  H01L21/66

CPC classification number: H01L21/82 ,  G01R31/2831 ,  G01R31/2856 ,  H01L22/32 ,  H01L22/34

Abstract: Speed of plasma etching is regulated in regions prone to over-etching by providing an etch resistant structure, such as a metal saw bow, in the region. By adjusting dimensions, such as the length and width of the saw bow legs and an area defined by the saw bow legs, as well as a shape of the etch region through techniques such as chamfering, plasma etch speed in the region can be controlled with an intent to match the speed of etching in non-over-etched regions.

公开(公告)号：US20150278674A1

公开(公告)日：2015-10-01

申请号：US14677836

申请日：2015-04-02

Applicant: NXP B.V.

Inventor： Patrick Schoengrundner ,  Ernst Eiper ,  Christian Zenz

IPC: G06K19/077 ,  H01L23/00

CPC classification number: G06K19/07769 ,  G06K19/07747 ,  G06K19/07754 ,  H01L23/49855 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/83 ,  H01L24/97 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48228 ,  H01L2224/48465 ,  H01L2224/49109 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/12042 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012

Abstract: Dual-interface Integrated Circuit (IC) card components and methods for manufacturing the dual-interface IC card components are described. In an embodiment, a dual-interface IC card component includes a single-sided contact base structure, which includes a substrate with an electrical contact layer. On the single-sided contact base structure, one or more antenna contact leads are attached to the single-sided contact base structure to form a dual-interface contact structure by applying an adhesive material to partially cover an overlapping area of the at least one antenna contact and the substrate, which is a component of a dual-interface IC card. Other embodiments are also described.

Abstract translation: 描述了用于制造双接口IC卡组件的双接口集成电路（IC）卡组件和方法。 在一个实施例中，双接口IC卡部件包括单面接触基部结构，其包括具有电接触层的基板。 在单面接触基底结构上，一个或多个天线接触引线附接到单面接触基底结构以通过施加粘合剂材料以部分地覆盖至少一个天线的重叠区域而形成双界面接触结构 接触和基板，它是双接口IC卡的组件。 还描述了其它实施例。

公开(公告)号：US12142527B2

公开(公告)日：2024-11-12

申请号：US18334421

申请日：2023-06-14

Applicant: NXP B.V.

Inventor： Antonius Hendrikus Jozef Kamphuis ,  Ernst Eiper ,  Johannes Cobussen ,  Chantal Claude Dijkstra

IPC: H01L21/82 ,  G01R31/28 ,  H01L21/66

Abstract: Speed of plasma etching is regulated in regions prone to over-etching by providing an etch resistant structure, such as a metal saw bow, in the region. By adjusting dimensions, such as the length and width of the saw bow legs and an area defined by the saw bow legs, as well as a shape of the etch region through techniques such as chamfering, plasma etch speed in the region can be controlled with an intent to match the speed of etching in non-over-etched regions.

公开(公告)号：US20230326796A1

公开(公告)日：2023-10-12

申请号：US18334421

申请日：2023-06-14

Applicant: NXP B.V.

Inventor： Antonius Hendrikus Jozef Kamphuis ,  Ernst Eiper ,  Johannes Cobussen ,  Chantal Claude Dijkstra

IPC: H01L21/82 ,  G01R31/28 ,  H01L21/66

CPC classification number: H01L21/82 ,  G01R31/2856 ,  G01R31/2831 ,  H01L22/32 ,  H01L22/34

Abstract: Speed of plasma etching is regulated in regions prone to over-etching by providing an etch resistant structure, such as a metal saw bow, in the region. By adjusting dimensions, such as the length and width of the saw bow legs and an area defined by the saw bow legs, as well as a shape of the etch region through techniques such as chamfering, plasma etch speed in the region can be controlled with an intent to match the speed of etching in non-over-etched regions.

公开(公告)号：US20210193524A1

公开(公告)日：2021-06-24

申请号：US16721083

申请日：2019-12-19

Applicant: NXP B.V.

Inventor： Antonius Hendrikus Jozef Kamphuis ,  Ernst Eiper ,  Johannes Cobussen ,  Chantal Dijkstra

IPC: H01L21/82 ,  G01R31/28 ,  H01L21/66

Abstract: Speed of plasma etching is regulated in regions prone to over-etching by providing an etch resistant structure, such as a metal saw bow, in the region. By adjusting dimensions, such as the length and width of the saw bow legs and an area defined by the saw bow legs, as well as a shape of the etch region through techniques such as chamfering, plasma etch speed in the region can be controlled with an intent to match the speed of etching in non-over-etched regions.