公开(公告)号：US12142527B2

公开(公告)日：2024-11-12

申请号：US18334421

申请日：2023-06-14

Applicant: NXP B.V.

Inventor： Antonius Hendrikus Jozef Kamphuis ,  Ernst Eiper ,  Johannes Cobussen ,  Chantal Claude Dijkstra

IPC: H01L21/82 ,  G01R31/28 ,  H01L21/66

Abstract: Speed of plasma etching is regulated in regions prone to over-etching by providing an etch resistant structure, such as a metal saw bow, in the region. By adjusting dimensions, such as the length and width of the saw bow legs and an area defined by the saw bow legs, as well as a shape of the etch region through techniques such as chamfering, plasma etch speed in the region can be controlled with an intent to match the speed of etching in non-over-etched regions.

公开(公告)号：US20230326796A1

公开(公告)日：2023-10-12

申请号：US18334421

申请日：2023-06-14

Applicant: NXP B.V.

Inventor： Antonius Hendrikus Jozef Kamphuis ,  Ernst Eiper ,  Johannes Cobussen ,  Chantal Claude Dijkstra

IPC: H01L21/82 ,  G01R31/28 ,  H01L21/66

CPC classification number: H01L21/82 ,  G01R31/2856 ,  G01R31/2831 ,  H01L22/32 ,  H01L22/34

Abstract: Speed of plasma etching is regulated in regions prone to over-etching by providing an etch resistant structure, such as a metal saw bow, in the region. By adjusting dimensions, such as the length and width of the saw bow legs and an area defined by the saw bow legs, as well as a shape of the etch region through techniques such as chamfering, plasma etch speed in the region can be controlled with an intent to match the speed of etching in non-over-etched regions.