公开(公告)号：US11943910B2

公开(公告)日：2024-03-26

申请号：US17646482

申请日：2021-12-30

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： Chung-Lin Huang

IPC: H10B12/00

CPC classification number: H10B12/053 ,  H10B12/34

Abstract: A manufacturing method of a semiconductor device includes forming an opening in a substrate, implanting a dopant in the substrate from a sidewall of the opening such that a doping region is formed in the substrate at the sidewall of the opening, filling a dielectric material in the opening to form a first dielectric structure after implanting the dopant in the substrate from the sidewall of the opening, and forming a passing word line in the dielectric structure.

公开(公告)号：US10651081B2

公开(公告)日：2020-05-12

申请号：US16138066

申请日：2018-09-21

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： Chung-Lin Huang

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/285 ,  H01L27/108

Abstract: The present disclosure provides a semiconductor structure and a method for manufacturing the semiconductor structure. The semiconductor structure includes a semiconductor substrate, a dielectric layer, a barrier layer, and a conductive layer. The semiconductor substrate has a plurality of mesas. The dielectric layer is disposed over the semiconductor substrate and has a plurality of blocks disposed over the mesas, respectively. The barrier layer is formed over a first lateral surface of the mesa, a second lateral surface of the block, an upper surface of the semiconductor substrate adjacent to the first lateral surface, and a front surface of the dielectric layer adjacent to the second lateral surface. The conductive layer has a base and a plurality of protrusions extending from the base and in contact with the barrier layer disposed over the upper surface, the first lateral surface, and the second lateral surface. A grain size of the base and the protrusions is consistent.

公开(公告)号：US11450553B2

公开(公告)日：2022-09-20

申请号：US16993251

申请日：2020-08-13

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： Ying-Cheng Chuang ,  Chung-Lin Huang ,  Lai-Cheng Tien ,  Chih-Lin Huang ,  Zhi-Yi Huang ,  Hsu Chiang

IPC: H01L21/762 ,  H01L23/00

Abstract: A method of forming a semiconductor structure includes following steps. A semiconductor material structure is formed over a substrate. A first pad layer is formed over the semiconductor material structure. The first pad layer and the semiconductor material structure are etched to form a trench. An oxidation process is performed on a sidewall of the semiconductor material structure to form a first oxide structure on the sidewall of the semiconductor material structure. A second oxide structure is formed in the trench.

公开(公告)号：US11121081B2

公开(公告)日：2021-09-14

申请号：US16656711

申请日：2019-10-18

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： Chung-Peng Hao ,  Chung-Lin Huang

IPC: H01L23/525

Abstract: An antifuse element includes a conductive region formed in a semiconductor substrate extending in a first direction, a dielectric layer formed on a portion of the conductive region, a first conductive plug formed on the dielectric layer, a second conductive plug formed on another portion of the conductive region, a first conductive member formed over the first conductive plug, and a second conductive member formed over the second conductive plug. The dielectric layer has a first dielectric portion extending in a second direction, and a second dielectric portion extending in the first direction, in which the dielectric layer implements an electrical isolation between the conductive region and the first conductive plug. The first conductive plug has a first region of a first width and a second region of a second width, and the first width is greater than the second width.

公开(公告)号：US12219749B2

公开(公告)日：2025-02-04

申请号：US17653629

申请日：2022-03-04

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： Szu-Yao Chang ,  Chung-Lin Huang

IPC: H10B12/00 ,  H01L29/66

Abstract: A semiconductor device structure and method for manufacturing the same are provided. The method includes: providing a substrate; forming a first word line and a second word line extending along a first direction; forming a dielectric material conformally on a first sidewall of the first word line and on a second sidewall of the second word line, wherein the second sidewall of the second word line faces the first sidewall of the first word line; forming a semiconductor material on a sidewall of the dielectric material; and patterning the dielectric material and the semiconductor material to form a gate dielectric structure and a channel layer between the first word line and the second word line.

公开(公告)号：US11315887B2

公开(公告)日：2022-04-26

申请号：US16902726

申请日：2020-06-16

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： Ying-Cheng Chuang ,  Chung-Lin Huang

IPC: H01L23/00 ,  H01L21/308 ,  H01L21/311

Abstract: The present disclosure provides a semiconductor structure and a method of manufacturing the semiconductor structure. The semiconductor structure includes a substrate defined with a peripheral region and an array area at least partially surrounded by the peripheral region, wherein the substrate includes a plurality of fins protruding from the substrate and disposed in the array area, and a first elongated member protruding from the substrate and at least partially surrounding the plurality of fins; an insulating layer disposed over the plurality of fins and the first elongated member; a capping layer disposed over the insulating layer; and an isolation surrounding the plurality of fins, the first elongated member, the insulating layer and the capping layer.

公开(公告)号：US10985163B2

公开(公告)日：2021-04-20

申请号：US16720846

申请日：2019-12-19

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： Chung-Lin Huang

IPC: H01L27/00 ,  H01L49/02 ,  H01L27/108 ,  H01L21/84

Abstract: The present disclosure provides a semiconductor capacitor structure. The semiconductor capacitor structure includes a substrate, a comb-like bottom electrode disposed over the substrate, a top electrode disposed over the comb-like bottom electrode, and a dielectric layer sandwiched between the top electrode and the comb-like bottom electrode. The comb-like bottom electrode includes a plurality of tooth portions parallel to the substrate and a supporting portion coupled to the plurality of tooth portions and perpendicular to the substrate.

公开(公告)号：US10573725B1

公开(公告)日：2020-02-25

申请号：US16137236

申请日：2018-09-20

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： Chung-Lin Huang

IPC: H01L23/52 ,  H01L29/66 ,  H01L23/532 ,  H01L21/768 ,  H01L21/3213 ,  H01L21/3205

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductor substrate, a dielectric layer, and silicide layer. The semiconductor substrate has a plurality of protrusions. The dielectric layer is disposed over the semiconductor substrate and has a plurality of blocks disposed over the protrusions. The silicide layer is disposed over a first sidewall of the protrusions, a second sidewall of the blocks, and an upper surface of the semiconductor substrate adjacent to the first sidewall, and a bottom surface of the silicide layer is lower than a first surface of the semiconductor substrate. The present disclosure further provides a method for manufacturing the semiconductor structure.

公开(公告)号：US12225717B2

公开(公告)日：2025-02-11

申请号：US18470446

申请日：2023-09-20

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： Chung-Lin Huang

IPC: H10B12/00

Abstract: A semiconductor device includes a substrate, a passing word line in the substrate, and a dielectric structure surrounding the passing word line. The dielectric structure has an enlargement portion at a bottom of the dielectric structure, and a maximum width of the enlargement portion of the dielectric structure is wider than a width of a top of the dielectric structure.

公开(公告)号：US12225709B2

公开(公告)日：2025-02-11

申请号：US18582672

申请日：2024-02-21

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： Chung-Lin Huang

IPC: H10B12/00

Abstract: A manufacturing method of a semiconductor device includes forming an opening in a substrate, implanting a dopant in the substrate from a sidewall of the opening such that a doping region is formed in the substrate at the sidewall of the opening, filling a dielectric material in the opening to form a first dielectric structure after implanting the dopant in the substrate from the sidewall of the opening, and forming a passing word line in the dielectric structure.