公开(公告)号：US12219749B2

公开(公告)日：2025-02-04

申请号：US17653629

申请日：2022-03-04

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： Szu-Yao Chang ,  Chung-Lin Huang

IPC: H10B12/00 ,  H01L29/66

Abstract: A semiconductor device structure and method for manufacturing the same are provided. The method includes: providing a substrate; forming a first word line and a second word line extending along a first direction; forming a dielectric material conformally on a first sidewall of the first word line and on a second sidewall of the second word line, wherein the second sidewall of the second word line faces the first sidewall of the first word line; forming a semiconductor material on a sidewall of the dielectric material; and patterning the dielectric material and the semiconductor material to form a gate dielectric structure and a channel layer between the first word line and the second word line.

公开(公告)号：US11641734B2

公开(公告)日：2023-05-02

申请号：US17659493

申请日：2022-04-18

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： Szu-Yao Chang

IPC: G11C8/14 ,  G11C11/402 ,  H01L49/02

Abstract: A method of forming a semiconductor structure includes forming a capacitor on a substrate. A recess is formed in the capacitor. A drain region is formed in the recess. A word line is formed on the drain region. A gate structure is formed on the drain region, and the gate structure is electrically connected to the word line. A first bit line is formed on the gate structure, such that the first bit line servers as a source region.

公开(公告)号：US11469231B2

公开(公告)日：2022-10-11

申请号：US17071444

申请日：2020-10-15

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： Chiang-Lin Shih ,  Chih-Hung Chen ,  Szu-Yao Chang

IPC: H01L27/108

Abstract: The present application discloses a semiconductor device with a protruding contact and a method for fabricating the semiconductor device with the protruding contact. The semiconductor device includes a substrate, a capacitor contact structure protruding from the substrate, and a landing pad layer covering a portion of a top surface of the capacitor contact structure and an upper portion of a sidewall of the capacitor contact structure.

公开(公告)号：US11264389B2

公开(公告)日：2022-03-01

申请号：US16892268

申请日：2020-06-03

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： Szu-Yao Chang

IPC: H01L21/20 ,  H01L27/108 ,  H01L49/02 ,  H01L29/94

Abstract: The stack capacitor structure includes a substrate, first, second, third, and fourth support layers, first, second, and third insulating layers, first, second, and third holes, and a capacitor. The first support layer is disposed over the substrate. The first insulating layer is disposed on the first support layer. The second support layer is disposed on the first insulating layer. The third support layer is disposed on the second support layer. The second insulating layer is disposed on the third support layer. The third insulating layer is disposed on the second insulating layer. The fourth support layer is disposed on the third insulating layer. The first hole penetrates through from the second support layer to the first support layer. The second and third holes penetrate through from the fourth support layer to the third support layer. The capacitor is disposed in the first, second, and third holes.

公开(公告)号：US20240023321A1

公开(公告)日：2024-01-18

申请号：US17862527

申请日：2022-07-12

Applicant: Nanya Technology Corporation

Inventor： Szu-Yao Chang

IPC: H01L27/108

CPC classification number: H01L27/10891 ,  H01L27/10852 ,  H01L27/10864

Abstract: The present application provides a memory device having a word line (WL) surrounding a gate structure and a manufacturing method of the memory device. The memory device includes a first dielectric surrounding a capacitor; a second dielectric disposed over the first dielectric and the capacitor; a word line embedded in the second dielectric; and a gate structure disposed over the capacitor and extending through the second dielectric, wherein the gate structure is at least partially surrounded by the word line.

公开(公告)号：US11574911B2

公开(公告)日：2023-02-07

申请号：US17544663

申请日：2021-12-07

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： Chiang-Lin Shih ,  Chih-Hung Chen ,  Szu-Yao Chang

IPC: H01L27/108

Abstract: The present application discloses a method for fabricating a semiconductor device with a protruding contact. The method includes providing a substrate; forming a bit line structure on the substrate; forming a capacitor contact structure next to the bit line structure; recessing a top surface of the bit line structure; and forming a landing pad layer covering a portion of a top surface of the capacitor contact structure and an upper portion of a sidewall of the capacitor contact structure.

公开(公告)号：US11342335B2

公开(公告)日：2022-05-24

申请号：US16673975

申请日：2019-11-05

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： Szu-Yao Chang

IPC: H01L27/108 ,  G11C8/14 ,  G11C11/402 ,  H01L49/02

Abstract: A semiconductor structure includes a substrate, a drain region, a word line, a gate structure, and a first bit line. The drain region is disposed on the substrate. The gate structure is disposed on the drain region and has a portion in the word line. The first bit line is disposed on the gate structure to serve as a source region.