公开(公告)号：US11450553B2

公开(公告)日：2022-09-20

申请号：US16993251

申请日：2020-08-13

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： Ying-Cheng Chuang ,  Chung-Lin Huang ,  Lai-Cheng Tien ,  Chih-Lin Huang ,  Zhi-Yi Huang ,  Hsu Chiang

IPC: H01L21/762 ,  H01L23/00

Abstract: A method of forming a semiconductor structure includes following steps. A semiconductor material structure is formed over a substrate. A first pad layer is formed over the semiconductor material structure. The first pad layer and the semiconductor material structure are etched to form a trench. An oxidation process is performed on a sidewall of the semiconductor material structure to form a first oxide structure on the sidewall of the semiconductor material structure. A second oxide structure is formed in the trench.