公开(公告)号：US11450553B2

公开(公告)日：2022-09-20

申请号：US16993251

申请日：2020-08-13

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： Ying-Cheng Chuang ,  Chung-Lin Huang ,  Lai-Cheng Tien ,  Chih-Lin Huang ,  Zhi-Yi Huang ,  Hsu Chiang

IPC: H01L21/762 ,  H01L23/00

Abstract: A method of forming a semiconductor structure includes following steps. A semiconductor material structure is formed over a substrate. A first pad layer is formed over the semiconductor material structure. The first pad layer and the semiconductor material structure are etched to form a trench. An oxidation process is performed on a sidewall of the semiconductor material structure to form a first oxide structure on the sidewall of the semiconductor material structure. A second oxide structure is formed in the trench.

公开(公告)号：US10811420B2

公开(公告)日：2020-10-20

申请号：US16502785

申请日：2019-07-03

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： Szu-Han Chen ,  Hsu Chiang ,  Ching-Yuan Kuo

IPC: H01L27/108 ,  H01L21/311 ,  H01L29/49 ,  H01L21/768

Abstract: The present disclosure provides a semiconductor structure and a method for forming the semiconductor structure. The semiconductor structure includes: a polysilicon layer, having a first surface and a second surface opposite to the first surface; a substrate, disposed on the second surface of the polysilicon layer; a bit line structure, disposed on the substrate, penetrating through the polysilicon layer and protruding from the first surface of the polysilicon layer; and a spacer structure, disposed on lateral sidewalls of the bit line structure, including an air gap sandwiched by a first dielectric layer and a second dielectric layer, wherein a first portion of the second dielectric layer is in the polysilicon layer, a second portion of the second dielectric layer is outside the polysilicon layer, and a thickness of the second portion of the second dielectric layer is less than a thickness of the first portion of the second dielectric layer.