公开(公告)号：US06748001B1

公开(公告)日：2004-06-08

申请号：US09516731

申请日：2000-03-01

申请人： Mitsuru Nishitsuka ,  Hiroyuki Ota ,  Kiyofumi Chikuma

发明人： Mitsuru Nishitsuka ,  Hiroyuki Ota ,  Kiyofumi Chikuma

IPC分类号： H01S500

CPC分类号： G11B7/1275 ,  G11B2007/0006 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/32316 ,  H01S5/32341 ,  H01S5/4025 ,  H01S5/405 ,  H01S5/4087

摘要： An object of the present invention is to provide a semiconductor laser device which is capable of selectively emitting two kinds of laser light of light emitting characteristics differing in wavelength, light emission point, beam shape, light emission power, longitudinal mode and so on, by switching the direction of the voltage applied to the device. There is provided the semiconductor laser device including first and second laser units, each unit having a ridge type structure and each unit comprising a multilayer structure body made of at least an n-type semiconductor layer, an active layer and a p-type semiconductor layer deposited in this order, and a p-side electrode and an n-side electrode, wherein the p-side electrode and the n-side electrode of the first laser unit and the n-side electrode and the p-side electrode of the second laser unit are electrically connected, respectively.

摘要翻译： 本发明的目的是提供一种能够选择性地发射波长不同，发光点，光束形状，发光功率，纵向模式等的发光特性的两种激光的半导体激光装置，其中， 切换施加到设备的电压的方向。 提供了包括第一和第二激光单元的半导体激光装置，每个单元具有脊型结构，并且每个单元包括由至少n型半导体层，有源层和p型半导体层制成的多层结构体 以及p侧电极和n侧电极，其中第一激光单元的p侧电极和n侧电极以及第二激光单元的n侧电极和p侧电极 激光单元分别电连接。

公开(公告)号：US06329667B1

公开(公告)日：2001-12-11

申请号：US09497695

申请日：2000-02-08

申请人： Hiroyuki Ota ,  Mitsuru Nishitsuka ,  Hirokazu Takahashi

发明人： Hiroyuki Ota ,  Mitsuru Nishitsuka ,  Hirokazu Takahashi

IPC分类号： H01L2906

CPC分类号： H01L33/02 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0207 ,  H01S5/10 ,  H01S5/2081 ,  H01S5/32341

摘要： A nitride semiconductor light emitting device having preferable light emitting characteristics even if dense threading dislocations extend through single crystal layers. The nitride semiconductor light emitting device includes an active layer obtained by depositing group-3 nitride semiconductors, and a barrier layer disposed adjacent to the active layer and having a greater bandgap than that of the active layer, the active layer having barrier portions which surround the threading dislocations and are defined by interfaces enclosing the threading dislocation and which are made of the same material as that of the barrier layer.

摘要翻译： 即使致密的穿透位错延伸穿过单晶层，也具有优选的发光特性的氮化物半导体发光器件。 氮化物半导体发光器件包括通过沉积III族氮化物半导体获得的有源层和与有源层相邻设置并且具有比有源层更大的带隙的势垒层，所述有源层具有包围所述有源层的势垒部分 穿透位错并且由包围穿透位错的界面限定，并且由与阻挡层相同的材料制成。

公开(公告)号：US06537839B2

公开(公告)日：2003-03-25

申请号：US09987948

申请日：2001-11-16

申请人： Hiroyuki Ota ,  Mitsuru Nishitsuka ,  Hirokazu Takahashi

发明人： Hiroyuki Ota ,  Mitsuru Nishitsuka ,  Hirokazu Takahashi

IPC分类号： H01L2100

CPC分类号： H01L33/02 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0207 ,  H01S5/10 ,  H01S5/2081 ,  H01S5/32341

摘要： A nitride semiconductor light emitting device having preferable light emitting characteristics even if dense threading dislocations extend through single crystal layers. The nitride semiconductor light emitting device includes an active layer obtained by depositing group-3 nitride semiconductors, and a barrier layer disposed adjacent to the active layer and having a greater bandgap than that of the active layer, the active layer having barrier portions which surround the threading dislocations and are defined by interfaces enclosing the threading dislocation and which are made of the same material as that of the barrier layer.

摘要翻译： 氮化物半导体发光器件即使致密的穿透位错延伸穿过单晶层，也具有优选的发光特性。氮化物半导体发光器件包括通过沉积III族氮化物半导体而获得的有源层和与活性物质相邻设置的势垒层 并且具有比有源层的带隙更大的带隙，所述有源层具有围绕穿透位错的阻挡部分，并且由包围穿透位错的界面限定，并且由与阻挡层的材料相同的材料制成。

公开(公告)号：US06411636B1

公开(公告)日：2002-06-25

申请号：US09468082

申请日：1999-12-21

申请人： Hiroyuki Ota ,  Kiyofumi Chikuma

发明人： Hiroyuki Ota ,  Kiyofumi Chikuma

IPC分类号： H01S500

CPC分类号： H01S5/0201 ,  H01S5/0202 ,  H01S5/32341

摘要： A method for fabricating a nitride-semiconductor laser constituted by superimposing a plurality of crystal layers respectively made of a group III nitride semiconductor (AlxGa1−x)1−YInyN (0≦x≦1, 0≦y≦1) on a cleavable or parting substrate in order comprises the crystal layer forming step of forming a plurality of crystal layers on a cleavable or parting substrate, the step of applying a light beam from the substrate side toward the interface between the substrate and the crystal layers and thereby forming the decomposed-matter area of the nitride semiconductor, and the step of cleaving or parting the substrate along a straight line intersecting with the decomposed-matter area and thereby forming a cleavage plane.

摘要翻译： 一种制造氮化物半导体激光器的方法，其通过将由III族氮化物半导体（Al x Ga 1-x）1-Y In y N（0≤x≤1,0<= y <1））分别制成的多个晶体层叠加而构成， 在可切割或分离基板上的顺序包括在可切割或分离的基板上形成多个晶体层的晶体层形成步骤，将从基板侧的光束施加到基板和晶体层之间的界面的步骤，以及 从而形成氮化物半导体的分解物区域，以及沿着与分解物区域相交的直线切断或分离基板的步骤，从而形成解理面。

公开(公告)号：US07399649B2

公开(公告)日：2008-07-15

申请号：US10577722

申请日：2004-09-27

申请人： Mamoru Miyachi ,  Hiroyuki Ota ,  Yoshinori Kimura ,  Kiyofumi Chikuma

发明人： Mamoru Miyachi ,  Hiroyuki Ota ,  Yoshinori Kimura ,  Kiyofumi Chikuma

IPC分类号： H01L21/00

CPC分类号： H01L33/0079 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/20

摘要： An underlying layer ALY of GaN is formed on a sapphire substrate SSB; a transfer layer TLY of GaN with a bump and dip shaped surface is formed on the underlying layer ALY; a light absorption layer BLY is formed on the bump and dip shaped surface of the transfer layer TLY; and a grown layer 4 of a planarization layer CLY and a structured light-emitting layer DLY having at least an active layer are formed on the light absorption layer BLY. A support substrate 2 is provided on the grown layer 4. The backside of the sapphire substrate SSB is irradiated with light of the second harmonic of YAG laser (wavelength 532 nm) to decompose the light absorption layer BLY and delaminate the sapphire substrate SSB, thereby allowing the planarization layer CLY of a bump and dip shaped surface to be exposed as a light extraction face.

摘要翻译： 在蓝宝石衬底SSB上形成GaN的下层ALY; 在底层ALY上形成具有凸起和浸渍形状表面的GaN的转移层TLY; 在转印层TLY的凸起和浸渍表面上形成光吸收层BLY; 并且在光吸收层BLY上形成平坦化层CLY的生长层4和至少具有有源层的结构化的发光层DLY。 在生长层4上设置有支撑基板2。 蓝宝石衬底SSB的背面用YAG激光的二次谐波（波长532nm）的光照射，以分解光吸收层BLY并使蓝宝石衬底SSB分层，从而使凸起和浸渍面的平坦化层CLY 被曝光作为光提取面。

公开(公告)号：US06711192B1

公开(公告)日：2004-03-23

申请号：US09567024

申请日：2000-05-09

申请人： Kiyofumi Chikuma ,  Hiroyuki Ota ,  Toshiyuki Tanaka

发明人： Kiyofumi Chikuma ,  Hiroyuki Ota ,  Toshiyuki Tanaka

IPC分类号： H01S500

CPC分类号： H01S5/22 ,  H01L2224/48463 ,  H01S5/0202 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/32341 ,  H01S2304/04

摘要： A method for fabricating a nitride semiconductor laser device having crystal layers each made of a group III nitride semiconductor (AlxGa1−x)1−YInyN (0≦x≦1, 0≦y≦1) layered in order on a ground layer (Alx′Ga1−x′)1−y′Iny′N (0≦x′≦1, 0≦y′≦1). The method including a step of forming a plurality of crystal layers each made of group III nitride semiconductor on a ground layer formed on a substrate such as sapphire; a step of applying a light beam from the substrate side toward the interface between the substrate and the ground layer thereby forming the decomposed-matter area of a nitride semiconductor; a step of separating the ground layer carrying the crystal layers from the substrate along the decomposed-matter area; and a step of cleaving the ground layer thereby forming a cleavage plane of the crystal layers.

摘要翻译： 一种用于制造氮化物半导体激光器件的方法，该器件具有各自由III族氮化物半导体（Al x Ga 1-x）1-Y In y N（0 <= x <= 1,0 <= y <= 1） 接地层（Al x Ga 1-x'）1-y'In y'N（0 <= x'<= 1,0 <= y'<= 1）。 该方法包括在形成在诸如蓝宝石的衬底上的接地层上形成由III族氮化物半导体制成的多个晶体层的步骤; 从基板侧朝向基板和接地层之间的界面施加光束，从而形成氮化物半导体的分解物区域的步骤; 沿着分解物区域从基板分离携带晶体层的接地层的步骤; 以及切割接地层从而形成晶体层的解理面的步骤。

公开(公告)号：US5337399A

公开(公告)日：1994-08-09

申请号：US800122

申请日：1991-11-29

申请人： Hiroyuki Ota ,  Kiyofumi Chikuma

发明人： Hiroyuki Ota ,  Kiyofumi Chikuma

IPC分类号： G02B6/12 ,  G02B6/42 ,  G02F1/35 ,  G02F1/355 ,  G02F1/37 ,  H01S3/109 ,  H01S5/00 ,  H01S5/042 ,  H01S5/20 ,  H01S5/227 ,  G02B6/02 ,  H03F7/00

CPC分类号： H01S5/0604 ,  G02B6/12004 ,  G02B6/42 ,  G02F1/377 ,  G02B2006/12064 ,  G02B2006/12078 ,  G02B2006/12121 ,  G02B2006/12147 ,  H01S5/028 ,  H01S5/1032 ,  H01S5/2004 ,  H01S5/2275

摘要： A wavelength conversion element comprises a laser oscillation portion provided with an active layer waveguide formed of a material of III-V group in a periodic table and an output waveguide path portion provided with an output waveguide. The output waveguide path portion is further provided with a buffer layer between the output waveguide and the active layer waveguide having a thickness suitable for propagation of an evanecsent wave from the active layer waveguide to the output waveguide. In result, a wavelength conversion efficiency of a second harmonic can be remarkably improved, and a process of manufacturing the wavelength conversion element becomes more easy.

摘要翻译： 波长转换元件包括设置有由周期表中的III-V族材料形成的有源层波导的激光振荡部分和设置有输出波导的输出波导路径部分。 输出波导路径部分还在输出波导和有源层波导之间设置缓冲层，该缓冲层具有适于将传播波从有源层波导传播到输出波导的厚度。 结果，可以显着提高二次谐波的波长转换效率，并且使波长转换元件的制造过程变得更加容易。

公开(公告)号：US20140042566A1

公开(公告)日：2014-02-13

申请号：US14112626

申请日：2011-04-21

申请人： Hiroyuki Ota ,  Kisho Ashida ,  Kentaro Miyajima

发明人： Hiroyuki Ota ,  Kisho Ashida ,  Kentaro Miyajima

IPC分类号： H01L41/04

CPC分类号： H01L41/04 ,  G01B7/18 ,  G01L1/2206 ,  G01L1/2293 ,  G01M5/0033 ,  G01M5/0083

摘要： A mechanical quantity measuring device (100) includes a semiconductor substrate (1) attached to a measured object so as to indirectly measure the mechanical quantity acting on the measured object; a measuring portion (7) capable of measuring a mechanical quantity acting on the semiconductor substrate (1) at a central part (1c) of the semiconductor substrate (1); and plural impurity diffused resistors (3a, 3b, 4a, 4b) forming a group (5) gathering closely to each other in at least one place, on an outer peripheral part (1e) outside the central part (1c) of the semiconductor substrate (1). The plural impurity diffused resistors (3a, 3b, 4a, 4b) forming one of the group (5) are connected to each other to form a Wheatstone bridge (2a, 2b). Thus, the mechanical quantity measuring device (100) can securely detect its own exfoliation.

摘要翻译： 机械量测量装置（100）包括安装在测量对象上的半导体衬底（1），以间接地测量作用在测量对象上的机械量; 能够测量在半导体衬底（1）的中心部分（1c）处作用在半导体衬底（1）上的机械量的测量部分（7）; 以及在半导体基板的中心部分（1c）的外侧的外周部（1e）上形成形成在至少一个位置上彼此紧密聚集的组（5）的多个杂质扩散电阻器（3a，3b，4a，4b） （1）。 形成组（5）中的一个的多个杂质扩散电阻器（3a，3b，4a，4b）彼此连接以形成惠斯通电桥（2a，2b）。 因此，机械量测量装置（100）可以安全地检测其自身的剥离。

公开(公告)号：US07803471B1

公开(公告)日：2010-09-28

申请号：US10343432

申请日：2001-12-28

申请人： Hiroyuki Ota ,  Haruhiko Fujisawa ,  Naoki Mukai ,  Satoru Fukiage ,  Kenji Sano ,  Shigeo Fujitani

发明人： Hiroyuki Ota ,  Haruhiko Fujisawa ,  Naoki Mukai ,  Satoru Fukiage ,  Kenji Sano ,  Shigeo Fujitani

IPC分类号： G11B5/706

CPC分类号： G11B5/735 ,  G11B5/584 ,  G11B5/78 ,  G11B23/502

摘要： A magnetic tape which comprises a nonmagnetic support, a magnetic layer which is formed on one surface of the nonmagnetic support, and a backcoat layer which comprises a binder and nonmagnetic powder containing carbon black as a component and which is formed on the other surface of the nonmagnetic support, having pits for optical servo formed thereon, characterized in that the average of the reflectance on the flat portion of the backcoat layer is 8.5% or higher, and that the maximum rate of fluctuation of the reflectance on the flat portion, depending on a position of the magnetic tape: [Maximum of absolute value of (Reflectance−Average reflectance)]×100/(Average reflectance) is 10% or lower. This magnetic tape is high in the initial S/N of the servo signal, and also high in the S/N of the servo signal found after the magnetic tape is run twice.

摘要翻译： 一种磁带，其包括非磁性载体，形成在非磁性载体的一个表面上的磁性层，以及背涂层，其包含粘合剂和含有炭黑作为组分的非磁性粉末，并形成在所述非磁性载体的另一个表面上 非磁性支撑件，其上形成有用于光学伺服的凹坑，其特征在于，背涂层的平坦部分上的反射率的平均值为8.5％以上，平坦部分的反射率的最大波动率取决于 磁带的位置：[反射率平均反射率的绝对值的最大值]×100 /（平均反射率）为10％以下。 该磁带在伺服信号的初始S / N高，并且在磁带运行两次之后发现的伺服信号的S / N也较高。

公开(公告)号：US07626234B2

公开(公告)日：2009-12-01

申请号：US11429962

申请日：2006-05-09

申请人： Kengo Inoue ,  Hiroyuki Ota

发明人： Kengo Inoue ,  Hiroyuki Ota

IPC分类号： H01L29/76

CPC分类号： H01L21/76232 ,  H01L21/31053 ,  H01L21/31111 ,  H01L21/823878 ,  H01L29/7833

摘要： A semiconductor device manufacturing method includes the steps of: (a) forming a stopper layer for chemical mechanical polishing on a surface of a semiconductor substrate; (b) forming an element isolation trench in the stopper layer and the semiconductor substrate; (c) depositing a nitride film covering an inner surface of the trench; (d) depositing a first oxide film through high density plasma CVD, the first oxide film burying at least a lower portion of the trench deposited with the nitride film; (e) washing out the first oxide film on a side wall of the trench by dilute hydrofluoric acid; (f) depositing a second oxide film by high density plasma CVD, the second oxide film burying the trench after the washing-out; and (g) removing the oxide films on the stopper layer by chemical mechanical polishing.

摘要翻译： 半导体器件制造方法包括以下步骤：（a）在半导体衬底的表面上形成用于化学机械抛光的阻挡层; （b）在所述阻挡层和半导体衬底中形成元件隔离沟槽; （c）沉积覆盖所述沟槽的内表面的氮化物膜; （d）通过高密度等离子体CVD沉积第一氧化物膜，第一氧化膜埋入沉积有氮化物膜的沟槽的至少下部; （e）通过稀氢氟酸在沟槽的侧壁上洗出第一氧化膜; （f）通过高密度等离子体CVD沉积第二氧化膜，第二氧化膜在洗出之后埋入沟槽; 和（g）通过化学机械抛光去除阻挡层上的氧化物膜。