公开(公告)号：US06748001B1

公开(公告)日：2004-06-08

申请号：US09516731

申请日：2000-03-01

申请人： Mitsuru Nishitsuka ,  Hiroyuki Ota ,  Kiyofumi Chikuma

发明人： Mitsuru Nishitsuka ,  Hiroyuki Ota ,  Kiyofumi Chikuma

IPC分类号： H01S500

CPC分类号： G11B7/1275 ,  G11B2007/0006 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/32316 ,  H01S5/32341 ,  H01S5/4025 ,  H01S5/405 ,  H01S5/4087

摘要： An object of the present invention is to provide a semiconductor laser device which is capable of selectively emitting two kinds of laser light of light emitting characteristics differing in wavelength, light emission point, beam shape, light emission power, longitudinal mode and so on, by switching the direction of the voltage applied to the device. There is provided the semiconductor laser device including first and second laser units, each unit having a ridge type structure and each unit comprising a multilayer structure body made of at least an n-type semiconductor layer, an active layer and a p-type semiconductor layer deposited in this order, and a p-side electrode and an n-side electrode, wherein the p-side electrode and the n-side electrode of the first laser unit and the n-side electrode and the p-side electrode of the second laser unit are electrically connected, respectively.

摘要翻译： 本发明的目的是提供一种能够选择性地发射波长不同，发光点，光束形状，发光功率，纵向模式等的发光特性的两种激光的半导体激光装置，其中， 切换施加到设备的电压的方向。 提供了包括第一和第二激光单元的半导体激光装置，每个单元具有脊型结构，并且每个单元包括由至少n型半导体层，有源层和p型半导体层制成的多层结构体 以及p侧电极和n侧电极，其中第一激光单元的p侧电极和n侧电极以及第二激光单元的n侧电极和p侧电极 激光单元分别电连接。

公开(公告)号：US06515311B1

公开(公告)日：2003-02-04

申请号：US09576859

申请日：2000-05-22

申请人： Mitsuru Nishitsuka ,  Kiyofumi Chikuma

发明人： Mitsuru Nishitsuka ,  Kiyofumi Chikuma

IPC分类号： H01L3300

CPC分类号： H01S5/32341 ,  H01S5/2004 ,  H01S5/2231

摘要： A GaN based semiconductor laser device which can prevent guided mode light emitted from the active layer from leaking through the cladding layer to the underlying layer without making the cladding layer excessively thick is provided. The device is characterized in that if an n-type cladding layer, a waveguide layer and a p-type cladding layer are collectively defined as a first three-layer waveguide path and a substrate, an underlying layer and an n-type cladding layer are collectively defined as a second three-layer waveguide path, then effective refractive indices of light propagating through the first and second three-layer waveguide paths are set different from each other.

摘要翻译： 提供了一种能够防止从有源层发射的引导模式的光透过包覆层泄漏到下层而不使覆层过厚的GaN基半导体激光器件。 该装置的特征在于，如果将n型包覆层，波导层和p型包覆层共同定义为第一三层波导路径和基板，则下层和n型包覆层为 共同定义为第二三层波导路径，则传播通过第一和第二三层波导路径的光的有效折射率被设定为彼此不同。

公开(公告)号：US07399649B2

公开(公告)日：2008-07-15

申请号：US10577722

申请日：2004-09-27

申请人： Mamoru Miyachi ,  Hiroyuki Ota ,  Yoshinori Kimura ,  Kiyofumi Chikuma

发明人： Mamoru Miyachi ,  Hiroyuki Ota ,  Yoshinori Kimura ,  Kiyofumi Chikuma

IPC分类号： H01L21/00

CPC分类号： H01L33/0079 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/20

摘要： An underlying layer ALY of GaN is formed on a sapphire substrate SSB; a transfer layer TLY of GaN with a bump and dip shaped surface is formed on the underlying layer ALY; a light absorption layer BLY is formed on the bump and dip shaped surface of the transfer layer TLY; and a grown layer 4 of a planarization layer CLY and a structured light-emitting layer DLY having at least an active layer are formed on the light absorption layer BLY. A support substrate 2 is provided on the grown layer 4. The backside of the sapphire substrate SSB is irradiated with light of the second harmonic of YAG laser (wavelength 532 nm) to decompose the light absorption layer BLY and delaminate the sapphire substrate SSB, thereby allowing the planarization layer CLY of a bump and dip shaped surface to be exposed as a light extraction face.

摘要翻译： 在蓝宝石衬底SSB上形成GaN的下层ALY; 在底层ALY上形成具有凸起和浸渍形状表面的GaN的转移层TLY; 在转印层TLY的凸起和浸渍表面上形成光吸收层BLY; 并且在光吸收层BLY上形成平坦化层CLY的生长层4和至少具有有源层的结构化的发光层DLY。 在生长层4上设置有支撑基板2。 蓝宝石衬底SSB的背面用YAG激光的二次谐波（波长532nm）的光照射，以分解光吸收层BLY并使蓝宝石衬底SSB分层，从而使凸起和浸渍面的平坦化层CLY 被曝光作为光提取面。

公开(公告)号：US06711192B1

公开(公告)日：2004-03-23

申请号：US09567024

申请日：2000-05-09

申请人： Kiyofumi Chikuma ,  Hiroyuki Ota ,  Toshiyuki Tanaka

发明人： Kiyofumi Chikuma ,  Hiroyuki Ota ,  Toshiyuki Tanaka

IPC分类号： H01S500

CPC分类号： H01S5/22 ,  H01L2224/48463 ,  H01S5/0202 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/32341 ,  H01S2304/04

摘要： A method for fabricating a nitride semiconductor laser device having crystal layers each made of a group III nitride semiconductor (AlxGa1−x)1−YInyN (0≦x≦1, 0≦y≦1) layered in order on a ground layer (Alx′Ga1−x′)1−y′Iny′N (0≦x′≦1, 0≦y′≦1). The method including a step of forming a plurality of crystal layers each made of group III nitride semiconductor on a ground layer formed on a substrate such as sapphire; a step of applying a light beam from the substrate side toward the interface between the substrate and the ground layer thereby forming the decomposed-matter area of a nitride semiconductor; a step of separating the ground layer carrying the crystal layers from the substrate along the decomposed-matter area; and a step of cleaving the ground layer thereby forming a cleavage plane of the crystal layers.

摘要翻译： 一种用于制造氮化物半导体激光器件的方法，该器件具有各自由III族氮化物半导体（Al x Ga 1-x）1-Y In y N（0 <= x <= 1,0 <= y <= 1） 接地层（Al x Ga 1-x'）1-y'In y'N（0 <= x'<= 1,0 <= y'<= 1）。 该方法包括在形成在诸如蓝宝石的衬底上的接地层上形成由III族氮化物半导体制成的多个晶体层的步骤; 从基板侧朝向基板和接地层之间的界面施加光束，从而形成氮化物半导体的分解物区域的步骤; 沿着分解物区域从基板分离携带晶体层的接地层的步骤; 以及切割接地层从而形成晶体层的解理面的步骤。

公开(公告)号：US06411636B1

公开(公告)日：2002-06-25

申请号：US09468082

申请日：1999-12-21

申请人： Hiroyuki Ota ,  Kiyofumi Chikuma

发明人： Hiroyuki Ota ,  Kiyofumi Chikuma

IPC分类号： H01S500

CPC分类号： H01S5/0201 ,  H01S5/0202 ,  H01S5/32341

摘要： A method for fabricating a nitride-semiconductor laser constituted by superimposing a plurality of crystal layers respectively made of a group III nitride semiconductor (AlxGa1−x)1−YInyN (0≦x≦1, 0≦y≦1) on a cleavable or parting substrate in order comprises the crystal layer forming step of forming a plurality of crystal layers on a cleavable or parting substrate, the step of applying a light beam from the substrate side toward the interface between the substrate and the crystal layers and thereby forming the decomposed-matter area of the nitride semiconductor, and the step of cleaving or parting the substrate along a straight line intersecting with the decomposed-matter area and thereby forming a cleavage plane.

摘要翻译： 一种制造氮化物半导体激光器的方法，其通过将由III族氮化物半导体（Al x Ga 1-x）1-Y In y N（0≤x≤1,0<= y <1））分别制成的多个晶体层叠加而构成， 在可切割或分离基板上的顺序包括在可切割或分离的基板上形成多个晶体层的晶体层形成步骤，将从基板侧的光束施加到基板和晶体层之间的界面的步骤，以及 从而形成氮化物半导体的分解物区域，以及沿着与分解物区域相交的直线切断或分离基板的步骤，从而形成解理面。

公开(公告)号：US5337399A

公开(公告)日：1994-08-09

申请号：US800122

申请日：1991-11-29

申请人： Hiroyuki Ota ,  Kiyofumi Chikuma

发明人： Hiroyuki Ota ,  Kiyofumi Chikuma

IPC分类号： G02B6/12 ,  G02B6/42 ,  G02F1/35 ,  G02F1/355 ,  G02F1/37 ,  H01S3/109 ,  H01S5/00 ,  H01S5/042 ,  H01S5/20 ,  H01S5/227 ,  G02B6/02 ,  H03F7/00

CPC分类号： H01S5/0604 ,  G02B6/12004 ,  G02B6/42 ,  G02F1/377 ,  G02B2006/12064 ,  G02B2006/12078 ,  G02B2006/12121 ,  G02B2006/12147 ,  H01S5/028 ,  H01S5/1032 ,  H01S5/2004 ,  H01S5/2275

摘要： A wavelength conversion element comprises a laser oscillation portion provided with an active layer waveguide formed of a material of III-V group in a periodic table and an output waveguide path portion provided with an output waveguide. The output waveguide path portion is further provided with a buffer layer between the output waveguide and the active layer waveguide having a thickness suitable for propagation of an evanecsent wave from the active layer waveguide to the output waveguide. In result, a wavelength conversion efficiency of a second harmonic can be remarkably improved, and a process of manufacturing the wavelength conversion element becomes more easy.

摘要翻译： 波长转换元件包括设置有由周期表中的III-V族材料形成的有源层波导的激光振荡部分和设置有输出波导的输出波导路径部分。 输出波导路径部分还在输出波导和有源层波导之间设置缓冲层，该缓冲层具有适于将传播波从有源层波导传播到输出波导的厚度。 结果，可以显着提高二次谐波的波长转换效率，并且使波长转换元件的制造过程变得更加容易。

公开(公告)号：US20050036421A1

公开(公告)日：2005-02-17

申请号：US10901303

申请日：2004-07-29

申请人： Kiyofumi Chikuma

发明人： Kiyofumi Chikuma

IPC分类号： G11B7/24 ,  G11B7/00 ,  G11B7/004 ,  G11B7/0045 ,  G11B7/005 ,  G11B7/242

CPC分类号： G11B7/24065 ,  G11B7/0045 ,  G11B7/00455 ,  G11B7/005 ,  G11B7/0052

摘要： An optical disk from which information is played back when the optical disk is irradiated with a playback light beam which does not pass through a photochromic layer before its transparency is changed by irradiation with a recording light beam, but passes through the photochromic layer after its transparency is changed, including: the photochromic layer which is initialized with initialization light and also maintains a change in its transparency caused by irradiation with a recording light beam after end of the irradiation; and a fluorescent layer for emitting, as detection light, light of a frequency different from the frequency of the playback light beam when the fluorescent layer is irradiated with the playback light beam, wherein the photochromic layer and the fluorescent layer are formed in order in the direction in which the recording light beam and the playback light beam are irradiated.

摘要翻译： 当光盘在通过照射记录光束而改变其透明度之前不通过光致变色层的重放光束照射光盘时，再通过光致变色层再透过信息的光盘 包括：用初始化光初始化的光致变色层，并且在照射结束后也保持由记录光束照射引起的透明度的变化; 以及荧光层，用于当荧光层被重放光束照射时，作为检测光发射与重放光束的频率不同的频率的光，其中光致变色层和荧光层在 记录光束和回放光束照射的方向。

公开(公告)号：US06573116B2

公开(公告)日：2003-06-03

申请号：US09908560

申请日：2001-07-20

申请人： Yoshiaki Watanabe ,  Kiyoshi Takei ,  Nong Chen ,  Kiyofumi Chikuma

发明人： Yoshiaki Watanabe ,  Kiyoshi Takei ,  Nong Chen ,  Kiyofumi Chikuma

IPC分类号： H01L2100

CPC分类号： H01S5/22 ,  H01S5/12 ,  H01S5/1231 ,  H01S5/1237 ,  H01S5/209

摘要： There is provided a method of manufacturing a ridge type LC-DFB semiconductor laser in which a laser substrate having a cladding layer made of a material for a ridge stripe formed on an active layer made of semiconductor. A stripe mask is formed on the cladding layer to form two lateral flat portions from the cladding layer, by a selective wet etching, so as to form a ridge stripe protruding therefrom and having a flat top portion at which the stripe mask capped. A grating mask is formed on the two lateral flat portions, side walls of the ridge stripe and the stripe mask. The grating mask has a periodic structure in the direction in which the ridge stripe extends. The two lateral flat portions and the side walls of the ridge stripe are dry-etched through the grating mask and then the two lateral flat portions and the side walls of the ridge stripe are wet-etched to form a grating of the material for the ridge stripe on the two lateral flat portions, the side walls of the ridge stripe and the active layer, so as to define a bracket grating portion adjacent to the ridge stripe.

摘要翻译： 提供了一种制造脊型LC-DFB半导体激光器的方法，其中具有由用于形成在由半导体制成的有源层上的用于脊条的材料制成的包层的激光基板。 在包覆层上形成条纹掩模，通过选择性湿蚀刻从包覆层形成两个横向平坦部分，从而形成从其突出的脊条，并且具有条形掩模封盖的平坦的顶部。 在两个侧面平坦部分，脊条和条纹掩模的侧壁上形成光栅掩模。 栅格掩模在脊条延伸的方向上具有周期性结构。 通过光栅掩模对棱条的两个横向平坦部分和侧壁进行干蚀刻，然后将脊条的两个侧向平坦部分和侧壁湿法蚀刻以形成用于脊的材料的光栅 在两个横向平坦部分上的条纹，脊状条的边壁和有源层，以便限定与脊条相邻的托架光栅部分。

公开(公告)号：US06535670B1

公开(公告)日：2003-03-18

申请号：US09425939

申请日：1999-10-25

申请人： Kiyoshi Takei ,  Yoshiaki Watanabe ,  Nong Chen ,  Kiyofumi Chikuma

发明人： Kiyoshi Takei ,  Yoshiaki Watanabe ,  Nong Chen ,  Kiyofumi Chikuma

IPC分类号： G02B626

CPC分类号： G02B6/125 ,  G02B6/12004 ,  G02B6/12007 ,  G02B6/29361

摘要： An optical transmitter and receiver module de-multiplexes a multi-wavelength optical signal into at least an optical signal of one wavelength band, and receives and transmits the signal. The module includes a first substrate, with a cleavage plane, for supporting input and output wave guides which intersect each other at a portion on the cleavage plane and extend from the portion of intersection at an equal angle with respect to normal at the portion on the cleavage plane. The module also includes an interference filter that is in contact with the cleavage plane on the portion of intersection of the input and output wave guides of the first substrate. Further, the module includes a second substrate, with a cleavage plane in contact with the interference filter, for supporting a transmit/receive wave guide having receiver and transmitter wave guides which extend from the vicinity of the portion of intersection and are separated from each other.

摘要翻译： 光发射机和接收机模块将多波长光信号解复用为至少一个波长带的光信号，并接收和发送信号。 该模块包括具有解理平面的第一衬底，用于支撑在解理平面上的一部分处彼此相交的输入和输出波导，并且在第一衬底上的相对于法线的相交角度相对于法线相交 劈裂平面。 该模块还包括与第一基板的输入和输出波导的相交部分上的解理平面接触的干涉滤光器。 此外，模块包括具有与干涉滤波器接触的解理面的第二基板，用于支撑具有从交叉部分附近延伸并彼此分离的接收器和发射器波导的发射/接收波导 。

公开(公告)号：US06500687B2

公开(公告)日：2002-12-31

申请号：US09049470

申请日：1998-03-27

申请人： Kiyoshi Takei ,  Yoshiaki Watanabe ,  Nong Chen ,  Kiyofumi Chikuma

发明人： Kiyoshi Takei ,  Yoshiaki Watanabe ,  Nong Chen ,  Kiyofumi Chikuma

IPC分类号： H01S530

CPC分类号： H01S5/12 ,  H01S5/1231 ,  H01S5/2081 ,  H01S5/2231

摘要： A method for producing a distributed feedback semiconductor laser element includes the steps of forming a laser substrate, forming a ridge by etching the laser substrate, and forming a flattening layer on the ridge. A grating is then formed on the flattening layer and the grating is further transferred to the laser substrate on which the ridge is formed. The flattening layer is removed and electrodes are then formed.

摘要翻译： 一种分布式反馈半导体激光元件的制造方法，其特征在于，包括：形成激光基板，通过蚀刻激光基板形成脊，在脊上形成平坦化层的工序。 然后在平坦化层上形成光栅，并且光栅进一步转移到其上形成有脊的激光基板。 去除扁平层，然后形成电极。