公开(公告)号：US07333525B2

公开(公告)日：2008-02-19

申请号：US11038576

申请日：2005-01-21

申请人： Yoshinori Kimura ,  Mamoru Miyachi ,  Kiyofumi Chikuma

发明人： Yoshinori Kimura ,  Mamoru Miyachi ,  Kiyofumi Chikuma

IPC分类号： H01S5/00

CPC分类号： H01S5/4031 ,  H01S5/0202 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/32325 ,  H01S5/32341 ,  H01S5/405 ,  H01S5/4087

摘要： An integrated semiconductor light-emitting device suitable for being mounted on a pickup is provided. The integrated semiconductor light-emitting device has a first laser part stacked on a semiconductor substrate and a projection-shaped second laser part formed by stack in thin-film-layer form. The second laser part is fitted into a trench formed adjacent to the first laser part in the semiconductor substrate. At least the first and second laser parts and the trench are bonded together through a metal bonding layer. An emission spot of the first laser part and an emission spot of the second laser part are located away in approximately the same horizontal direction perpendicular to the direction of the stack of the first and second laser parts.

摘要翻译： 提供一种适于安装在拾取器上的集成半导体发光器件。 集成半导体发光器件具有堆叠在半导体衬底上的第一激光器部分和以薄膜层形式堆叠形成的突出形状的第二激光器部分。 第二激光器部件装配到与半导体衬底中的第一激光器部分相邻形成的沟槽中。 至少第一和第二激光部分和沟槽通过金属粘结层粘合在一起。 第一激光部的发光点和第二激光部的发光点位于与第一激光部和第二激光部的堆叠的方向垂直的大致相同的水平方向上。

公开(公告)号：US08937323B2

公开(公告)日：2015-01-20

申请号：US13598951

申请日：2012-08-30

申请人： Mamoru Miyachi ,  Tatsuma Saito ,  Mitsunori Harada

发明人： Mamoru Miyachi ,  Tatsuma Saito ,  Mitsunori Harada

IPC分类号： H01L29/18 ,  H01L27/15 ,  H01L33/20 ,  H01L33/38

CPC分类号： H01L27/153 ,  H01L33/20 ,  H01L33/385 ,  H01L33/387

摘要： A light emitting element in use for an LED array comprises an electrode layer, a semiconductor light emitting layer consisting of a p-type semiconductor layer, an active layer and an n-type semiconductor layer, a first wiring layer formed along and in parallel to one side of the semiconductor light emitting layer, and a plurality of second wiring layers extending from the first wiring layer to the semiconductor light emitting layer and electrically connected to the n-type semiconductor layer on a surface of the semiconductor light emitting layer, wherein a plane shape of the semiconductor light emitting layer comprises two short sides including a portion inclined from a line perpendicular to a upper and a lower sides, and a vertical line from a vertex where the upper side and the short side meet crosses the lower side of the adjacent light emitting element.

摘要翻译： 用于LED阵列的发光元件包括电极层，由p型半导体层，有源层和n型半导体层组成的半导体发光层，沿着并且与 半导体发光层的一侧，以及从第一布线层向半导体发光层延伸并与半导体发光层的表面电连接的n型半导体层的多个第二布线层，其中， 半导体发光层的平面形状包括两个短边，包括从垂直于上侧和下侧的直线倾斜的部分，以及来自上侧和短边相交的顶点的垂直线与 相邻的发光元件。

公开(公告)号：US08236588B2

公开(公告)日：2012-08-07

申请号：US12158648

申请日：2006-12-14

申请人： Mamoru Miyachi ,  Yoshinori Kimura

发明人： Mamoru Miyachi ,  Yoshinori Kimura

IPC分类号： H01S3/063

CPC分类号： H01S5/4043 ,  H01S5/0216 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/024 ,  H01S5/22 ,  H01S5/405 ,  H01S5/4087 ,  Y10S438/977

摘要： An object is to provide a multi-wavelength integrated semiconductor laser device which can reduce variations in emission point distance, can be formed by simplified manufacturing processes, and can provide improve electric characteristics.A first semiconductor laser element 100 having an active layer AL1 for emitting a laser beam of a first wavelength from its light-emitting point X1 and a second semiconductor laser element 200 having an active layer AL2 for emitting a laser beam of a second wavelength from its light-emitting point X2 are bonded to each other via an adhesive layer MC made of metal. At least either one of the semiconductor laser elements has a ridge waveguide made of an n-type semiconductor. The semiconductor laser elements 100 and 200 are bonded via the metal adhesive layer MC at the sides of their respective p-type semiconductors. A submount SUB is bonded to the first semiconductor laser element 100 via metal at a side where its ridge waveguide is formed.

摘要翻译： 本发明的目的是提供一种可以减少发射点距离的变化的多波长集成半导体激光器件，可以通过简化的制造工艺形成，并且可以提供改善的电气特性。 具有从其发光点X1发射第一波长的激光束的有源层AL1的第一半导体激光元件100和具有从其发光点X1发射第二波长的激光束的有源层AL2的第二半导体激光元件200 发光点X2通过由金属制成的粘合剂层MC彼此结合。 半导体激光元件中的至少一个具有由n型半导体构成的脊状波导。 半导体激光元件100和200通过金属粘合剂层MC在它们各自的p型半导体的侧面接合。 底座SUB通过金属在其脊形波导形成的一侧与第一半导体激光元件100接合。

公开(公告)号：US20100054502A1

公开(公告)日：2010-03-04

申请号：US12439747

申请日：2006-09-05

申请人： Mamoru Miyachi

发明人： Mamoru Miyachi

IPC分类号： H04R1/00

CPC分类号： G10K15/04 ,  H01L35/32 ,  H04R23/002

摘要： A thermoacoustic generating apparatus (1) is for generating acoustic waves by temperature modulation of solids, and is provided with: a thermoelement layer (12); a first electrode layer (11), laminated on one surface of the thermoelement layer; and a second electrode layer (13), laminated on the other surface of the thermoelement layer.

摘要翻译： 热声产生装置（1）用于通过固体的温度调制产生声波，并且设置有：热电偶层（12）; 层叠在所述热电偶层的一个表面上的第一电极层（11） 和层叠在所述热电偶层的另一个表面上的第二电极层（13）。

公开(公告)号：US07098063B2

公开(公告)日：2006-08-29

申请号：US10743542

申请日：2003-12-23

申请人： Mamoru Miyachi ,  Atsushi Watanabe ,  Hirokazu Takahashi ,  Yoshinori Kimura

发明人： Mamoru Miyachi ,  Atsushi Watanabe ,  Hirokazu Takahashi ,  Yoshinori Kimura

IPC分类号： H01L21/00

CPC分类号： B82Y20/00 ,  G11B7/1275 ,  G11B2007/0006 ,  H01L2224/48463 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/0213 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/02461 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/32325 ,  H01S5/32341 ,  H01S5/34326 ,  H01S5/34333 ,  H01S5/4043 ,  H01S5/4087 ,  H01S2301/173 ,  H01S2304/04

摘要： A semiconductor laser device comprises: a first light-emitting element having a first laser part, an insulating layer, and an ohmic electrode layer; and a second light-emitting element having a second laser part, an insulating layer, and an ohmic electrode layer. The first laser part has a ridge waveguide, and is formed by stacking thin films of group-III nitride compound semiconductors (for example, GaN-based semiconductors). The second laser part has a ridge waveguide, and is formed by stacking thin films of group III–V compound semiconductors (such as GaAs). The first laser part and the second laser part are integrally bonded to each other by the interposition of an adhesive metal layer which is formed between the ohmic electrode layers. This provides the semiconductor laser device with a small distance between the light-emitting spots of the laser parts.

摘要翻译： 半导体激光器件包括：具有第一激光器部分，绝缘层和欧姆电极层的第一发光元件; 以及具有第二激光部分，绝缘层和欧姆电极层的第二发光元件。 第一激光器部分具有脊形波导，并且通过堆叠III族氮化物化合物半导体（例如，GaN基半导体）的薄膜形成。 第二激光器部分具有脊形波导，并且通过堆叠III-V族化合物半导体（诸如GaAs）的薄膜形成。 第一激光部分和第二激光部分通过插入形成在欧姆电极层之间的粘合金属层而彼此一体地接合。 这为半导体激光器件在激光器部件的发光点之间提供了很小的距离。

公开(公告)号：US07312468B2

公开(公告)日：2007-12-25

申请号：US10535175

申请日：2003-11-12

申请人： Atushi Watanabe ,  Atsuya Ito ,  Hirokazu Takahashi ,  Yoshinori Kimura ,  Mamoru Miyachi

发明人： Atushi Watanabe ,  Atsuya Ito ,  Hirokazu Takahashi ,  Yoshinori Kimura ,  Mamoru Miyachi

IPC分类号： H01L29/06 ,  H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336 ,  H01L33/00

CPC分类号： B82Y20/00 ,  H01S5/305 ,  H01S5/3086 ,  H01S5/34333

摘要： The semiconductor light-emitting element uses a compound semiconductor quantum well structure comprising a well layer, and barrier layers between which the well layer is sandwiched, as an active layer. In the adjacent well layer and barrier layers of the semiconductor light-emitting element, the well layer has in part a doped well region to which an n-type impurity is added at the interface with the barrier layer on the electron injection side, and in the vicinity of this interface, and the barrier layer has a doped barrier region to which the n-type impurity is added at least at the interface and in the vicinity of this interface.

摘要翻译： 半导体发光元件使用包括阱层的化合物半导体量子阱结构和夹在阱层之间的阻挡层作为有源层。 在半导体发光元件的相邻的阱层和阻挡层中，阱层部分地具有与电子注入侧的势垒层的界面处添加n型杂质的掺杂阱区域，在 该界面附近，势垒层具有至少在界面处和界面附近添加n型杂质的掺杂阻挡区域。

公开(公告)号：US20070099321A1

公开(公告)日：2007-05-03

申请号：US10581202

申请日：2004-09-27

申请人： Mamoru Miyachi ,  Yoshinori Kimura ,  Kiyofumi Chikuma

发明人： Mamoru Miyachi ,  Yoshinori Kimura ,  Kiyofumi Chikuma

IPC分类号： H01L21/00 ,  H01L21/28 ,  H01L21/3205

CPC分类号： H01S5/4043 ,  H01S5/0217 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/4087

摘要： A first intermediate body is fabricated on a semiconductor substrate. The first intermediate body includes a first lasing portion of a multi-layer stack and a metal adherent layer. A second intermediate body is fabricated on a support substrate. The second intermediate body includes a second lasing portion formed of a multi-layer stack to be less in size than the first lasing portion, and a groove formed adjacent thereto to form a metal adherent layer. Then, with waveguide paths brought into close proximity, the adherent layers of the first and second intermediate bodies are fused to generate an integrated adherent layer, thereby securely adhering the first and second lasing portions to each other. Thereafter, the support substrate is stripped off from the second lasing portion, thereby allowing the adherent layer to be partially exposed. A semiconductor laser device is thus fabricated which has the exposed adherent layer as a common electrode.

摘要翻译： 在半导体衬底上制造第一中间体。 第一中间体包括多层堆叠的第一激光部分和金属粘附层。 在支撑基板上制造第二中间体。 第二中间体包括由多层叠层形成的尺寸小于第一激光部分的第二激光部分和与其相邻形成的沟槽以形成金属粘附层。 然后，随着波导路径相互靠近，第一和第二中间体的粘附层被熔合以产生一体化的粘合层，从而将第一和第二激光部分牢固地粘附到彼此。 此后，从第二激光部分剥离支撑基板，从而允许粘附层部分露出。 因此制造了具有暴露的粘附层作为公共电极的半导体激光器件。

公开(公告)号：US20050169153A1

公开(公告)日：2005-08-04

申请号：US11035054

申请日：2005-01-14

申请人： Masakazu Ogasawara ,  Makoto Sato ,  Mamoru Miyachi ,  Yoshinori Kimura

发明人： Masakazu Ogasawara ,  Makoto Sato ,  Mamoru Miyachi ,  Yoshinori Kimura

IPC分类号： G11B7/00 ,  G11B7/12 ,  G11B7/123 ,  G11B7/125 ,  G11B7/1275 ,  G11B7/135 ,  G11B7/1353 ,  G11B7/1365 ,  H01S5/022 ,  H01S5/323 ,  H01S5/343 ,  H01S5/40

CPC分类号： G11B7/1275 ,  G11B7/123 ,  G11B7/1353 ,  G11B7/1365 ,  G11B2007/0006

摘要： A two wavelength laser module is made up of a semiconductor laser assembly that includes a first semiconductor laser for emitting a first light beam of a first polarization direction and a second semiconductor laser for emitting a second light beam of a second polarization direction. The second light beam is emitted approximately in the same direction as that of the first light beam and has a shorter wavelength than that of the first light beam. The first and second semiconductor lasers are disposed on a substrate. The module includes a polarization diffraction element for causing a divergence angle of the first light beam to differ from that of the second light beam.

摘要翻译： 双波长激光器模块由包括用于发射第一偏振方向的第一光束的第一半导体激光器和用于发射第二偏振方向的第二光束的第二半导体激光器的半导体激光器组件构成。 第二光束大致以与第一光束相同的方向发射，并且具有比第一光束的波长短的波长。 第一和第二半导体激光器设置在基板上。 该模块包括用于使第一光束的发散角与第二光束的发散角不同的偏振衍射元件。

公开(公告)号：US06235548B1

公开(公告)日：2001-05-22

申请号：US09461035

申请日：1999-12-15

申请人： Hiroyuki Ota ,  Yoshinori Kimura ,  Mamoru Miyachi

发明人： Hiroyuki Ota ,  Yoshinori Kimura ,  Mamoru Miyachi

IPC分类号： H01L2100

CPC分类号： H01S5/32341 ,  H01S5/0213 ,  H01S5/3063

摘要： The disclosure is a method for fabricating a nitride semiconductor laser device of group-III nitride semiconductor having a substrate. The method includes a step of forming a crystal layer made of a group-III nitride semiconductor (AlxGa1-x)1-yInyN (0≦x≦1, 0≦y≦1) having an added group II element over the substrate; a step of heating the crystal layer up to a predetermined temperature in a thermal treatment atmosphere and maintaining the predetermined temperature for a first time period; and a step of introducing a hydrocarbon gas into the thermal treatment atmosphere for at least a partial time period within the first time period. The method further includes a step of irradiating an electromagnetic wave or photons to the crystal layer in the at least a partial time period, wherein the electromagnetic wave or photons have an energy greater than an energy forbidden band width of the group III nitride semiconductor in the crystal layer.

摘要翻译： 本公开是制造具有基板的III族氮化物半导体的氮化物半导体激光器件的方法。 该方法包括由具有添加的II族元素的III族氮化物半导体（Al x Ga 1-x）1-y In y N（0 <= x <= 1,0 <= y <= 1）形成的晶体层的步骤 基材; 在热处理气氛中将晶体层加热到预定温度并保持第一时间段的预定温度的步骤; 以及在第一时间段内将烃气体引入热处理气氛中至少部分时间段的步骤。 该方法还包括在至少部分时间段内将电磁波或光子照射到晶体层的步骤，其中电磁波或光子的能量大于III族氮化物半导体的能量禁带宽度 晶体层。

公开(公告)号：US06207469B1

公开(公告)日：2001-03-27

申请号：US09177805

申请日：1998-10-23

申请人： Hiroyuki Ota ,  Yoshinori Kimura ,  Mamoru Miyachi

发明人： Hiroyuki Ota ,  Yoshinori Kimura ,  Mamoru Miyachi

IPC分类号： H01L2100

CPC分类号： H01L33/007 ,  H01L21/268 ,  H01L21/3245

摘要： A GaN type semiconductor layer in which a group 2 impurity element is added is formed. The GaN type semiconductor layer is heated at a predetermined temperature, while irradiating the semiconductor layer with an electromagnetic wave having an energy larger than the band gap energy of the GaN type semiconductor layer.

摘要翻译： 形成添加了第2族杂质元素的GaN型半导体层。 在预定温度下加热GaN型半导体层，同时用具有比GaN型半导体层的带隙能量大的能量的电磁波照射半导体层。