公开(公告)号：US06329667B1

公开(公告)日：2001-12-11

申请号：US09497695

申请日：2000-02-08

申请人： Hiroyuki Ota ,  Mitsuru Nishitsuka ,  Hirokazu Takahashi

发明人： Hiroyuki Ota ,  Mitsuru Nishitsuka ,  Hirokazu Takahashi

IPC分类号： H01L2906

CPC分类号： H01L33/02 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0207 ,  H01S5/10 ,  H01S5/2081 ,  H01S5/32341

摘要： A nitride semiconductor light emitting device having preferable light emitting characteristics even if dense threading dislocations extend through single crystal layers. The nitride semiconductor light emitting device includes an active layer obtained by depositing group-3 nitride semiconductors, and a barrier layer disposed adjacent to the active layer and having a greater bandgap than that of the active layer, the active layer having barrier portions which surround the threading dislocations and are defined by interfaces enclosing the threading dislocation and which are made of the same material as that of the barrier layer.

摘要翻译： 即使致密的穿透位错延伸穿过单晶层，也具有优选的发光特性的氮化物半导体发光器件。 氮化物半导体发光器件包括通过沉积III族氮化物半导体获得的有源层和与有源层相邻设置并且具有比有源层更大的带隙的势垒层，所述有源层具有包围所述有源层的势垒部分 穿透位错并且由包围穿透位错的界面限定，并且由与阻挡层相同的材料制成。

公开(公告)号：US06537839B2

公开(公告)日：2003-03-25

申请号：US09987948

申请日：2001-11-16

申请人： Hiroyuki Ota ,  Mitsuru Nishitsuka ,  Hirokazu Takahashi

发明人： Hiroyuki Ota ,  Mitsuru Nishitsuka ,  Hirokazu Takahashi

IPC分类号： H01L2100

CPC分类号： H01L33/02 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0207 ,  H01S5/10 ,  H01S5/2081 ,  H01S5/32341

摘要： A nitride semiconductor light emitting device having preferable light emitting characteristics even if dense threading dislocations extend through single crystal layers. The nitride semiconductor light emitting device includes an active layer obtained by depositing group-3 nitride semiconductors, and a barrier layer disposed adjacent to the active layer and having a greater bandgap than that of the active layer, the active layer having barrier portions which surround the threading dislocations and are defined by interfaces enclosing the threading dislocation and which are made of the same material as that of the barrier layer.

摘要翻译： 氮化物半导体发光器件即使致密的穿透位错延伸穿过单晶层，也具有优选的发光特性。氮化物半导体发光器件包括通过沉积III族氮化物半导体而获得的有源层和与活性物质相邻设置的势垒层 并且具有比有源层的带隙更大的带隙，所述有源层具有围绕穿透位错的阻挡部分，并且由包围穿透位错的界面限定，并且由与阻挡层的材料相同的材料制成。

公开(公告)号：US06795471B2

公开(公告)日：2004-09-21

申请号：US10117095

申请日：2002-04-08

申请人： Atsushi Watanabe ,  Yoshinori Kimura ,  Hiroyuki Ota ,  Toshiyuki Tanaka ,  Hirokazu Takahashi ,  Mamoru Miyachi ,  Atsuya Ito

发明人： Atsushi Watanabe ,  Yoshinori Kimura ,  Hiroyuki Ota ,  Toshiyuki Tanaka ,  Hirokazu Takahashi ,  Mamoru Miyachi ,  Atsuya Ito

IPC分类号： H01S500

CPC分类号： H01S5/32341 ,  H01S5/0213 ,  H01S5/0224 ,  H01S5/221 ,  H01S5/2216 ,  H01S5/222 ,  H01S5/2222 ,  H01S2301/18 ,  H01S2304/00

摘要： A nitride compound semiconductor laser, of which driving voltage is low and transverse mode of light is stable, having a plurality of crystal layers made of a group III nitride compound semiconductor expressed by the formula (AlGa1-x)1-yInyN (0≦x≦1, 0≦y≦1). The layers include an active layer-side guide layer which is adjacent to an active layer in the crystal layers of the group III nitride compound semiconductor and made of Alx′Ga1-x′-y′Iny′N (0≦x′≦1, 0≦y′≦1), a current constricting AlN layer deposited on said guide layer and having a stripe-shape aperture, an electrode-side guide layer made of Alx″Ga1-x″-y″Iny″N (0≦x″≦1, 0≦y″≦1) and deposited filling the aperture of the current constricting layer, and a clad layer made of AluGa1-u-vInvN (0≦u≦1, 0≦v≦1) and deposited on the electrode-side guide layer.

摘要翻译： 驱动电压低且横向模式稳定的氮化物化合物半导体激光器具有由式（AlGa1-x）1-yInyN（0≤...）表示的由III族氮化物化合物半导体构成的多个晶体层， x <= 1，0 <= y <= 1）。 这些层包括与III族氮化物化合物半导体的晶体层中的有源层相邻的有源层侧引导层，由Al x Ga 1-x'-y'In y'N（0 <= x' = 1,0 <= y'<= 1），沉积在所述引导层上并具有条形孔的电流收缩AlN层，由Al x''Ga 1-x“y”形成的电极侧引导层， “Iny''N（0 <= x”<= 1,0,0 <= y“<= 1），并填充电流收缩层的孔径，以及由AluGa1-u-vInvN（0 <= u <= 1，0 <= v <= 1）并沉积在电极侧引导层上。

公开(公告)号：US5834326A

公开(公告)日：1998-11-10

申请号：US763779

申请日：1996-12-11

申请人： Mamoru Miyachi ,  Toshiyuki Tanaka ,  Yoshinori Kimura ,  Hirokazu Takahashi ,  Hitoshi Sato ,  Atsushi Watanabe ,  Hiroyuki Ota ,  Isamu Akasaki ,  Hiroshi Amano

发明人： Mamoru Miyachi ,  Toshiyuki Tanaka ,  Yoshinori Kimura ,  Hirokazu Takahashi ,  Hitoshi Sato ,  Atsushi Watanabe ,  Hiroyuki Ota ,  Isamu Akasaki ,  Hiroshi Amano

IPC分类号： H01L33/12 ,  H01L33/32 ,  H01L33/36 ,  H01S5/00 ,  H01S5/323 ,  H01L21/00

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/325 ,  Y10S148/065 ,  Y10S148/113

摘要： A process for producing a semiconductor emitting device of group III nitride semiconductor having a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) includes; a step of forming at least one pn-junction or pin-junction and a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) to which a group II element is added; and a step of forming electrodes on the crystal layer. The process further includes an electric-field-assisted annealing treatment in which the pn-junction or pin-junction is heated to the predetermined temperature range while forming and maintaining an electric field across the pn-junction or pin-junction for at least partial time period of the predetermined temperature range via the electrodes.

摘要翻译： 一种用于制造半导体具有晶体层（的AlxGa1-x）的1-yInyN（0

公开(公告)号：US10342968B2

公开(公告)日：2019-07-09

申请号：US13995720

申请日：2011-12-21

申请人： Akihiro Hasui ,  Atsuhiko Shiraishi ,  Ken-ichi Hattori ,  Shinji Tanaka ,  Hirokazu Takahashi ,  Makoto Takahashi

发明人： Akihiro Hasui ,  Atsuhiko Shiraishi ,  Ken-ichi Hattori ,  Shinji Tanaka ,  Hirokazu Takahashi ,  Makoto Takahashi

IPC分类号： A61N1/04 ,  A61N1/32 ,  A61N1/30 ,  A61M37/00

摘要： The present invention verifies a method of reducing skin irritation (particularly, cumulative skin irritation) caused by transdermal administration of a local anesthetic using iontophoresis, and provides an electrode pad for relief from a puncture pain which is safe not only at single administration but also at repeated administrations. The electrode pad comprises a base sheet; an electrode placed on the base sheet; an adhesive sheet placed on the base sheet and having an opening, within which the electrode being exposed; and a medicament reservoir containing a local anesthetic and placed in the opening of the adhesive sheet while being in contact with the electrode. An inner peripheral surface of the opening of the adhesive sheet and an outer peripheral surface of the medicament reservoir are prevented from coming into contact with human skin while contacting with each other, and thereby skin irritation is reduced.

公开(公告)号：US09256439B2

公开(公告)日：2016-02-09

申请号：US13443465

申请日：2012-04-10

申请人： Hirokazu Takahashi

发明人： Hirokazu Takahashi

IPC分类号： G06F9/345 ,  G06F9/38 ,  G06F12/08 ,  G06T1/60 ,  G06F12/02

CPC分类号： G06F9/3885 ,  G06F9/345 ,  G06F12/0284 ,  G06F12/0842 ,  G06F12/0875 ,  G06F12/0886 ,  G06F2212/1016 ,  G06F2212/455 ,  G06T1/60

摘要： A data processing apparatus causes multiple processors to process in parallel input data that is arrayed two-dimensionally, and stores the data of the processing results in a cache line of a cache memory, where the data of the processing results includes a plurality of pieces of data of a predetermined width that is smaller than a cache line width of the cache memory. The data stored in the cache memory is then transferred together to a main memory as in the cache line.

摘要翻译： 数据处理装置使得多个处理器对二维排列的并行输入数据进行处理，并将处理结果的数据存储在高速缓冲存储器的高速缓存行中，其中处理结果的数据包括多个 预定宽度的数据小于高速缓存存储器的高速缓存行宽度。 存储在高速缓冲存储器中的数据然后一起传送到主存储器，如在高速缓存线中那样。

公开(公告)号：US08710209B2

公开(公告)日：2014-04-29

申请号：US12963600

申请日：2010-12-08

申请人： Xiaomei Jin ,  Lei Yu ,  Hirokazu Takahashi ,  Yasunobu Tanaka ,  Yoshiro Niitsu ,  Elena Feinstein ,  Sharon Avkin-Nachum ,  Hagar Kalinski ,  Igor Mett ,  Shai Erlich ,  Elizabeth C. Squiers ,  Ning Chen

发明人： Xiaomei Jin ,  Lei Yu ,  Hirokazu Takahashi ,  Yasunobu Tanaka ,  Yoshiro Niitsu ,  Elena Feinstein ,  Sharon Avkin-Nachum ,  Hagar Kalinski ,  Igor Mett ,  Shai Erlich ,  Elizabeth C. Squiers ,  Ning Chen

IPC分类号： C07H21/04

CPC分类号： C12N15/113 ,  A61K31/713 ,  C12N2310/11 ,  C12N2310/14 ,  C12N2310/31 ,  C12N2310/315 ,  C12N2310/317 ,  C12N2310/32 ,  C12N2310/321 ,  C12N2310/33 ,  C12N2310/531 ,  C12N2320/30 ,  C12N2310/3521

摘要： Provided herein are compositions, methods and kits for modulating expression of target genes, particularly heat shock protein 47 (hsp47). The compositions, methods and kits may include nucleic acid molecules (for example, short interfering nucleic acid (siNA), short interfering RNA (siRNA), double-stranded RNA (dsRNA), micro-RNA (miRNA) or short hairpin RNA (shRNA)) that modulate a gene encoding hsp47, for example, the gene encoding human hsp47. The composition and methods disclosed herein may also be used in treating conditions and disorders associated with hsp47 such as liver fibrosis, pulmonary fibrosis, peritoneal fibrosis and kidney fibrosis.

摘要翻译： 本文提供用于调节靶基因，特别是热休克蛋白47（hsp47）的表达的组合物，方法和试剂盒。 组合物，方法和试剂盒可以包括核酸分子（例如，短干扰核酸（siNA），短干扰RNA（siRNA），双链RNA（dsRNA），微RNA（miRNA）或短发夹RNA（shRNA） ）），其调节编码hsp47的基因，例如编码人hsp47的基因。 本文公开的组合物和方法也可用于治疗与hsp47相关的病症和病症，例如肝纤维化，肺纤维化，腹膜纤维化和肾纤维化。

公开(公告)号：US08455761B2

公开(公告)日：2013-06-04

申请号：US12682437

申请日：2009-09-24

申请人： Tatsunori Hayashishita ,  Hirokazu Takahashi

发明人： Tatsunori Hayashishita ,  Hirokazu Takahashi

IPC分类号： H01B7/00

CPC分类号： H01B11/1839

摘要： A coaxial cable includes an insulator having void portions continuing in a longitudinal direction, a central conductor covered with the insulator, and an outer conductor arranged on an outer circumference of the insulator. Each of the void portions is formed to have a circular or elliptical cross section, and the void portions are evenly arranged in the insulator in a set of six to nine. In a cross section perpendicular to the longitudinal direction of the coaxial cable, a void ratio of the entire void portions is 43% or more. The void ratio is a proportion of the void portions to a sum of a total area of all the void portions and an area of the insulator.

摘要翻译： 同轴电缆包括具有沿纵向连续的空隙部分的绝缘体，被绝缘体覆盖的中心导体以及布置在绝缘体的外圆周上的外导体。 每个空隙部分形成为具有圆形或椭圆形横截面，并且空隙部分均匀地布置在六至九组的绝缘体中。 在垂直于同轴电缆的纵向的横截面中，空隙部分的空隙率为43％以上。 空隙率是空隙部分的比例与所有空隙部分的总面积和绝缘体的面积之和的总和。

公开(公告)号：US20130030034A9

公开(公告)日：2013-01-31

申请号：US13246621

申请日：2011-09-27

申请人： Yoshiro Niitsu ,  Hirokazu Takahashi ,  Yasunobu Tanaka ,  Elena Feinstein ,  Sharon Avkin-Nachum ,  Hagar Kalinski ,  Igor Mett

发明人： Yoshiro Niitsu ,  Hirokazu Takahashi ,  Yasunobu Tanaka ,  Elena Feinstein ,  Sharon Avkin-Nachum ,  Hagar Kalinski ,  Igor Mett

IPC分类号： A61K31/7088 ,  A61P43/00 ,  C07H21/02

CPC分类号： C12N15/113 ,  A61K9/0019 ,  A61K31/713 ,  C07K14/8146 ,  C12N2310/14 ,  C12N2310/3519 ,  C12N2320/30 ,  C12N2320/32

摘要： Provided herein are compositions, methods and kits for modulating expression of target genes, particularly of tissue inhibitor of metalloproteinase 1 and of tissue inhibitor of metalloproteinase 2 (TIMP1 and TIMP2, respectively). The compositions, methods and kits may include nucleic acid molecules (for example, short interfering nucleic acid (siNA), short interfering RNA (siRNA), double-stranded RNA (dsRNA), micro-RNA (miRNA) or short hairpin RNA (shRNA)) that modulate a gene encoding TIMP1 and TIMP2, for example, the gene encoding human TIMP1 and TIMP2. The composition and methods disclosed herein may also be used in treating conditions and disorders associated with TIMP1 and TIMP2 including fibrotic diseases and disorders including liver fibrosis, pulmonary fibrosis, peritoneal fibrosis and kidney fibrosis.

摘要翻译： 本文提供用于调节靶基因，特别是金属蛋白酶1的组织抑制剂和金属蛋白酶2的组织抑制剂（分别为TIMP1和TIMP2）的表达的组合物，方法和试剂盒。 组合物，方法和试剂盒可以包括核酸分子（例如，短干扰核酸（siNA），短干扰RNA（siRNA），双链RNA（dsRNA），微RNA（miRNA）或短发夹RNA（shRNA） ）），其调节编码TIMP1和TIMP2的基因，例如编码人TIMP1和TIMP2的基因。 本文公开的组合物和方法也可用于治疗与TIMP1和TIMP2相关的病症和病症，包括纤维化疾病和病症，包括肝纤维化，肺纤维化，腹膜纤维化和肾纤维化。

公开(公告)号：US20120142754A1

公开(公告)日：2012-06-07

申请号：US13246621

申请日：2011-09-27

申请人： Yoshiro Niitsu ,  Hirokazu Takahashi ,  Yasunobu Tanaka ,  Elena Feinstein ,  Sharon Avkin-Nachum ,  Hagar Kalinski ,  Igor Mett

发明人： Yoshiro Niitsu ,  Hirokazu Takahashi ,  Yasunobu Tanaka ,  Elena Feinstein ,  Sharon Avkin-Nachum ,  Hagar Kalinski ,  Igor Mett

IPC分类号： A61K31/7088 ,  A61P43/00 ,  C07H21/02

CPC分类号： C12N15/113 ,  A61K9/0019 ,  A61K31/713 ,  C07K14/8146 ,  C12N2310/14 ,  C12N2310/3519 ,  C12N2320/30 ,  C12N2320/32

摘要： Provided herein are compositions, methods and kits for modulating expression of target genes, particularly of tissue inhibitor of metalloproteinase 1 and of tissue inhibitor of metalloproteinase 2 (TIMP1 and TIMP2, respectively). The compositions, methods and kits may include nucleic acid molecules (for example, short interfering nucleic acid (siNA), short interfering RNA (siRNA), double-stranded RNA (dsRNA), micro-RNA (miRNA) or short hairpin RNA (shRNA)) that modulate a gene encoding TIMP1 and TIMP2, for example, the gene encoding human TIMP1 and TIMP2. The composition and methods disclosed herein may also be used in treating conditions and disorders associated with TIMP1 and TIMP2 including fibrotic diseases and disorders including liver fibrosis, pulmonary fibrosis, peritoneal fibrosis and kidney fibrosis.

摘要翻译： 本文提供用于调节靶基因，特别是金属蛋白酶1的组织抑制剂和金属蛋白酶2的组织抑制剂（分别为TIMP1和TIMP2）的表达的组合物，方法和试剂盒。 组合物，方法和试剂盒可以包括核酸分子（例如，短干扰核酸（siNA），短干扰RNA（siRNA），双链RNA（dsRNA），微RNA（miRNA）或短发夹RNA（shRNA） ）），其调节编码TIMP1和TIMP2的基因，例如编码人TIMP1和TIMP2的基因。 本文公开的组合物和方法也可用于治疗与TIMP1和TIMP2相关的病症和病症，包括纤维化疾病和病症，包括肝纤维化，肺纤维化，腹膜纤维化和肾纤维化。