公开(公告)号：US20240030087A1

公开(公告)日：2024-01-25

申请号：US18331385

申请日：2023-06-08

Applicant: Mitsubishi Electric Corporation

Inventor： Yasunari HINO ,  Yasuo TANAKA ,  Shinnosuke SODA

IPC: H01L23/367 ,  H01L23/373 ,  H02M7/5387 ,  H01L23/492 ,  H01L23/495 ,  H01L21/48

CPC classification number: H01L23/3675 ,  H01L23/3735 ,  H02M7/53875 ,  H01L23/492 ,  H01L23/49568 ,  H01L23/49562 ,  H01L23/4952 ,  H01L21/4875

Abstract: Provided are a semiconductor device with a bonding strength ensured between an electrode of a semiconductor element and a terminal, and a power conversion device including the semiconductor device. A semiconductor device includes: a semiconductor element having an electrode; a substrate; a terminal; and a bonding material. The terminal has a through hole and has a step portion in the inside of the through hole. The bonding material covers the step portion in the inside of the through hole and is in contact with the electrode of the semiconductor element.

公开(公告)号：US20240234348A9

公开(公告)日：2024-07-11

申请号：US18359096

申请日：2023-07-26

Applicant: Mitsubishi Electric Corporation

Inventor： Yasunari HINO ,  Junichi YAMASHITA ,  Koji TANAKA ,  Tomohide TERASHIMA ,  Shinichi IZUO

IPC: H01L23/00 ,  H01L23/49 ,  H02M7/44

CPC classification number: H01L24/05 ,  H01L23/49 ,  H01L24/03 ,  H01L24/04 ,  H01L24/45 ,  H01L24/48 ,  H02M7/44 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/03334 ,  H01L2224/037 ,  H01L2224/0381 ,  H01L2224/04042 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05138 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05186 ,  H01L2224/05553 ,  H01L2224/05573 ,  H01L2224/05582 ,  H01L2224/05584 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/0566 ,  H01L2224/29124 ,  H01L2224/29147 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/01014 ,  H01L2924/0132 ,  H01L2924/01402 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/12036 ,  H01L2924/13055 ,  H01L2924/13091

Abstract: Provided is a semiconductor device with higher reliability and longer life which can suppress an increase in production costs. A semiconductor device includes: a semiconductor element; a top electrode on an upper surface of the semiconductor element; and a conductive metal plate containing copper as a main component and solid-state diffusion bonded to the top electrode of the semiconductor element.

公开(公告)号：US20220028794A1

公开(公告)日：2022-01-27

申请号：US17494128

申请日：2021-10-05

Applicant: Mitsubishi Electric Corporation

Inventor： Yasunari HINO ,  Yo TANAKA ,  Masao KIKUCHI

IPC: H01L23/532 ,  H01L23/49 ,  H01L23/31 ,  H01L23/495 ,  H01L23/00

Abstract: There is provided a semiconductor device including an insulating substrate provided with a circuit surface, and an external terminal bonded to the circuit surface. The circuit surface has an upper surface that is in contact with and bonded to a part of a lower surface of the external terminal. In at least a part of a portion where the upper surface of the circuit surface and the lower surface of the external terminal are in contact with each other, a melted portion of the circuit surface and the external terminal is formed. A gap between the upper surface of the circuit surface and the lower surface of the external terminal has a size of 20 μm or less. The circuit surface and the external terminal are each made of copper or copper alloy.

公开(公告)号：US20190122998A1

公开(公告)日：2019-04-25

申请号：US16112824

申请日：2018-08-27

Applicant: Mitsubishi Electric Corporation

Inventor： Yasunari HINO

IPC: H01L23/00 ,  H01L23/367 ,  H01L23/31 ,  H01L23/50 ,  H01L21/48 ,  H01L21/56

Abstract: The semiconductor device includes a metal plate, a semiconductor element held on the metal plate, a wiring board connected to a surface electrode of the semiconductor element in a facing manner and a conductor fixed to the wiring board wired to the semiconductor element. The conductor has a plate-like shape. One end of the conductor is arranged to be connectable to an outside. One surface side of another end of the conductor is fixed to a surface of the wiring hoard. The conductor includes at least one protruding step on the one surface of the other end. A top portion of the protruding step includes a contact surface parallel to the surface of the wiring board. The other end of the conductor is fixed to the wiring board by the contact surface and the surface of the wiring board coming into close contact with each other.

公开(公告)号：US20240136309A1

公开(公告)日：2024-04-25

申请号：US18359096

申请日：2023-07-25

Applicant: Mitsubishi Electric Corporation

Inventor： Yasunari HINO ,  Junichi YAMASHITA ,  Koji TANAKA ,  Tomohide TERASHIMA ,  Shinichi IZUO

IPC: H01L23/00 ,  H01L23/49 ,  H02M7/44

CPC classification number: H01L24/05 ,  H01L23/49 ,  H01L24/03 ,  H01L24/04 ,  H01L24/45 ,  H01L24/48 ,  H02M7/44 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/03334 ,  H01L2224/037 ,  H01L2224/0381 ,  H01L2224/04042 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05138 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05186 ,  H01L2224/05553 ,  H01L2224/05573 ,  H01L2224/05582 ,  H01L2224/05584 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/0566 ,  H01L2224/29124 ,  H01L2224/29147 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/01014 ,  H01L2924/0132 ,  H01L2924/01402 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/12036 ,  H01L2924/13055 ,  H01L2924/13091

Abstract: Provided is a semiconductor device with higher reliability and longer life which can suppress an increase in production costs. A semiconductor device includes: a semiconductor element; a top electrode on an upper surface of the semiconductor element; and a conductive metal plate containing copper as a main component and solid-state diffusion bonded to the top electrode of the semiconductor element.

公开(公告)号：US20200027839A1

公开(公告)日：2020-01-23

申请号：US16443350

申请日：2019-06-17

Applicant: Mitsubishi Electric Corporation

Inventor： Yasunari HINO ,  Yo TANAKA ,  Masao KIKUCHI

IPC: H01L23/532 ,  H01L23/49 ,  H01L23/31 ,  H01L23/495 ,  H01L23/00

Abstract: There is provided a semiconductor device including an insulating substrate provided with a circuit surface, and an external terminal bonded to the circuit surface. The circuit surface has an upper surface that is in contact with and bonded to a part of a lower surface of the external terminal. In at least a part of a portion where the upper surface of the circuit surface and the lower surface of the external terminal are in contact with each other, a melted portion of the circuit surface and the external terminal is formed. A gap between the upper surface of the circuit surface and the lower surface of the external terminal has a size of 20 μm or less. The circuit surface and the external terminal are each made of copper or copper alloy.

公开(公告)号：US20150130085A1

公开(公告)日：2015-05-14

申请号：US14488561

申请日：2014-09-17

Applicant: Mitsubishi Electric Corporation

Inventor： Yasunari HINO

IPC: H01L23/00

CPC classification number: H01L24/83 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/29007 ,  H01L2224/29014 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29364 ,  H01L2224/32014 ,  H01L2224/32055 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/83203 ,  H01L2224/8384 ,  H01L2224/92247 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/2076 ,  H01L2924/00014

Abstract: A manufacturing method of a semiconductor device according to the present invention includes the steps of (a) preparing an insulating or conductive substrate; (b) arranging a bonding material having sinterability in at least one bonding region of a principal surface of the substrate (i.e., insulating substrate); and (c) sintering the bonding material while a bonding surface to be subjected to bonding of at least one semiconductor element is brought into pressurized contact with the bonding material, and bonding the substrate (i.e., insulating substrate) and the semiconductor element together through the bonding material. The bonding region in the step (b) is inwardly positioned from the bonding surface (i.e., region) of the semiconductor element in plan view, and the bonding material is not protruded outwardly from the bonding surface of the semiconductor element in plan view even after the step (c).

Abstract translation: 根据本发明的半导体器件的制造方法包括以下步骤：（a）制备绝缘或导电衬底; （b）在所述基板（即，绝缘基板）的主表面的至少一个接合区域中布置具有可烧结性的接合材料; 以及（c）烧结所述接合材料，同时使至少一个半导体元件的接合接合面与所述接合材料进行加压接触，并且通过所述接合材料将所述基板（即，绝缘基板）和所述半导体元件接合在一起 接合材料。 步骤（b）中的接合区域在平面图中从半导体元件的接合表面（即，区域）向内定位，并且接合材料在平面图中甚至在平面图中也不从半导体元件的接合表面向外突出 步骤（c）。

公开(公告)号：US20150041827A1

公开(公告)日：2015-02-12

申请号：US14247272

申请日：2014-04-08

Applicant: Mitsubishi Electric Corporation

Inventor： Aya IWATA ,  Yasunari HINO

IPC: H01L23/00 ,  H01L29/16 ,  H01L23/482

CPC classification number: H01L24/05 ,  H01L23/367 ,  H01L23/3735 ,  H01L23/3736 ,  H01L23/4827 ,  H01L24/03 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L29/1608 ,  H01L2224/0383 ,  H01L2224/04026 ,  H01L2224/05023 ,  H01L2224/05144 ,  H01L2224/05155 ,  H01L2224/05552 ,  H01L2224/05557 ,  H01L2224/05568 ,  H01L2224/05583 ,  H01L2224/05644 ,  H01L2224/2732 ,  H01L2224/2929 ,  H01L2224/29298 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/83 ,  H01L2224/83192 ,  H01L2224/83203 ,  H01L2224/83365 ,  H01L2224/83385 ,  H01L2224/8384 ,  H01L2251/5369 ,  H01L2924/00014 ,  H01L2924/207 ,  H01L2924/00012

Abstract: A bonding structure including metal nano particles includes a first member having a metal surface on at least one side, a second member having a metal surface on at least one side, the second member being disposed such that the metal surface of the second member faces the metal surface of the first member, and a bonding material bonding the first member and the second member by sinter-bonding the metal nano particles. At least one of the metal surfaces of the first member and the second member is formed to be a rough surface having a surface roughness within the range from 0.5 μm to 2.0 μm.

Abstract translation: 包括金属纳米颗粒的粘合结构包括在至少一侧具有金属表面的第一构件，在至少一个侧面上具有金属表面的第二构件，第二构件设置成使得第二构件的金属表面面向 第一构件的金属表面和通过烧结金属纳米颗粒来接合第一构件和第二构件的接合材料。 第一构件和第二构件的金属表面中的至少一个形成为表面粗糙度在0.5μm至2.0μm的粗糙表面。

公开(公告)号：US20210010158A1

公开(公告)日：2021-01-14

申请号：US16861885

申请日：2020-04-29

Applicant: Mitsubishi Electric Corporation

Inventor： Masashi SAKAI ,  Shinichiro KATSUKI ,  Kazuo KOBAYASHI ,  Yasunari HINO

IPC: C30B25/12 ,  H01L21/687 ,  H01L21/67 ,  H01L21/02 ,  C23C16/32 ,  C23C16/458 ,  C23C16/46 ,  C30B25/10 ,  C30B29/36

Abstract: Provided are a silicon carbide epitaxial growth device capable of fostering epitaxial growth on a silicon carbide substrate. Mounting a wafer holder loaded with a silicon carbide substrate and a tantalum carbide member to a turntable in a susceptor, and supplying a growth gas, a doping gas, and a carrier gas into the susceptor by heating by induction heating coils placed around the susceptor, thereby epitaxial growth is fostered, and stable and proper device characteristics are obtained, moreover, the yield in a manufacturing step of the silicon carbide epitaxial wafer is significantly improved.

公开(公告)号：US20190214326A1

公开(公告)日：2019-07-11

申请号：US16299315

申请日：2019-03-12

Applicant: Mitsubishi Electric Corporation

Inventor： Yasunari HINO ,  Kiyoshi ARAI

IPC: H01L23/367 ,  H01L23/00 ,  H01L21/48 ,  H01L23/532 ,  H01L23/528 ,  H01L25/00 ,  H01L25/11 ,  H01L23/373 ,  H01L23/433 ,  H01L23/495

Abstract: In a power semiconductor device, an IGBT has a collector electrode bonded to a metal plate by a bonding material. A diode has a cathode electrode bonded to the metal plate by the bonding material. An interconnection member is bonded to an emitter electrode of the IGBT by a bonding material. The bonding material includes a bonding material and a bonding material. The bonding material is interposed between the IGBT and the interconnection member. The bonding material fills a through hole formed in the interconnection member. The bonding material reaches the bonding material and is therefore connected to the bonding material.