公开(公告)号：US20240136309A1

公开(公告)日：2024-04-25

申请号：US18359096

申请日：2023-07-25

Applicant: Mitsubishi Electric Corporation

Inventor： Yasunari HINO ,  Junichi YAMASHITA ,  Koji TANAKA ,  Tomohide TERASHIMA ,  Shinichi IZUO

IPC: H01L23/00 ,  H01L23/49 ,  H02M7/44

CPC classification number: H01L24/05 ,  H01L23/49 ,  H01L24/03 ,  H01L24/04 ,  H01L24/45 ,  H01L24/48 ,  H02M7/44 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/03334 ,  H01L2224/037 ,  H01L2224/0381 ,  H01L2224/04042 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05138 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05186 ,  H01L2224/05553 ,  H01L2224/05573 ,  H01L2224/05582 ,  H01L2224/05584 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/0566 ,  H01L2224/29124 ,  H01L2224/29147 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/01014 ,  H01L2924/0132 ,  H01L2924/01402 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/12036 ,  H01L2924/13055 ,  H01L2924/13091

Abstract: Provided is a semiconductor device with higher reliability and longer life which can suppress an increase in production costs. A semiconductor device includes: a semiconductor element; a top electrode on an upper surface of the semiconductor element; and a conductive metal plate containing copper as a main component and solid-state diffusion bonded to the top electrode of the semiconductor element.

公开(公告)号：US20240234348A9

公开(公告)日：2024-07-11

申请号：US18359096

申请日：2023-07-26

Applicant: Mitsubishi Electric Corporation

Inventor： Yasunari HINO ,  Junichi YAMASHITA ,  Koji TANAKA ,  Tomohide TERASHIMA ,  Shinichi IZUO

IPC: H01L23/00 ,  H01L23/49 ,  H02M7/44

CPC classification number: H01L24/05 ,  H01L23/49 ,  H01L24/03 ,  H01L24/04 ,  H01L24/45 ,  H01L24/48 ,  H02M7/44 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/03334 ,  H01L2224/037 ,  H01L2224/0381 ,  H01L2224/04042 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05138 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05186 ,  H01L2224/05553 ,  H01L2224/05573 ,  H01L2224/05582 ,  H01L2224/05584 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/0566 ,  H01L2224/29124 ,  H01L2224/29147 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/01014 ,  H01L2924/0132 ,  H01L2924/01402 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/12036 ,  H01L2924/13055 ,  H01L2924/13091

Abstract: Provided is a semiconductor device with higher reliability and longer life which can suppress an increase in production costs. A semiconductor device includes: a semiconductor element; a top electrode on an upper surface of the semiconductor element; and a conductive metal plate containing copper as a main component and solid-state diffusion bonded to the top electrode of the semiconductor element.