ORGANIC LIGHT EMITTING DISPLAY AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    ORGANIC LIGHT EMITTING DISPLAY AND METHOD OF MANUFACTURING THE SAME 有权
    有机发光显示器及其制造方法

    公开(公告)号:US20110140112A1

    公开(公告)日:2011-06-16

    申请号:US12881686

    申请日:2010-09-14

    IPC分类号: H01L51/52 H01L51/56

    CPC分类号: H01L27/3248

    摘要: An organic light emitting display and a method of manufacturing the same are disclosed. In one embodiment, the display includes a gate electrode formed over a substrate and an active layer electrically insulated from the gate electrode, wherein the gate electrode is closer to the substrate than the active layer. The display further includes i) a first gate insulating layer and a second gate insulating layer formed between the gate electrode and active layer so as to electrically insulate the active layer from the gate electrode and ii) source and drain electrodes each contacting the active layer.

    摘要翻译: 公开了一种有机发光显示器及其制造方法。 在一个实施例中,显示器包括形成在衬底上的栅电极和与栅电极电绝缘的有源层,其中栅电极比有源层更靠近衬底。 显示器还包括i)形成在栅电极和有源层之间的第一栅极绝缘层和第二栅极绝缘层,以便使有源层与栅极电绝缘,以及ii)每个接触有源层的源极和漏极。

    Organic light emitting display and method of manufacturing the same
    4.
    发明授权
    Organic light emitting display and method of manufacturing the same 有权
    有机发光显示器及其制造方法

    公开(公告)号:US08890148B2

    公开(公告)日:2014-11-18

    申请号:US12881686

    申请日:2010-09-14

    IPC分类号: H01L31/00 H01L27/32

    CPC分类号: H01L27/3248

    摘要: An organic light emitting display and a method of manufacturing the same are disclosed. In one embodiment, the display includes a gate electrode formed over a substrate and an active layer electrically insulated from the gate electrode, wherein the gate electrode is closer to the substrate than the active layer. The display further includes i) a first gate insulating layer and a second gate insulating layer formed between the gate electrode and active layer so as to electrically insulate the active layer from the gate electrode and ii) source and drain electrodes each contacting the active layer.

    摘要翻译: 公开了一种有机发光显示器及其制造方法。 在一个实施例中,显示器包括形成在衬底上的栅电极和与栅电极电绝缘的有源层,其中栅电极比有源层更靠近衬底。 显示器还包括i)形成在栅电极和有源层之间的第一栅极绝缘层和第二栅极绝缘层,以便使有源层与栅极电绝缘,以及ii)每个接触有源层的源极和漏极。

    Thin film transistor, method of manufacturing the same and flat panel display device having the same
    6.
    发明授权
    Thin film transistor, method of manufacturing the same and flat panel display device having the same 有权
    薄膜晶体管,其制造方法和具有该薄膜晶体管的平板显示装置

    公开(公告)号:US09035313B2

    公开(公告)日:2015-05-19

    申请号:US13408825

    申请日:2012-02-29

    IPC分类号: H01L29/786 H01L29/49

    摘要: A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include a gate electrode formed on a substrate; an active layer made of an oxide semiconductor and insulated from the gate electrode by a gate insulating layer; source and drain electrodes coupled to the active layer; and an interfacial stability layer formed on one or both surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristic as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

    摘要翻译: 使用氧化物半导体作为有源层的薄膜晶体管(TFT),制造TFT的方法以及具有该TFT的平板显示装置包括形成在基板上的栅电极; 由氧化物半导体制成的有源层,并通过栅极绝缘层与栅电极绝缘; 源极和漏极耦合到有源层; 以及形成在活性层的一个或两个表面上的界面稳定层。 在TFT中,界面稳定层由带隙为3.0〜8.0eV的氧化物形成。 由于界面稳定层具有与栅极绝缘层和钝化层相同的特性,因此保持化学上高的界面稳定性。 由于界面稳定层具有等于或大于有源层的带隙,所以物理地防止了电荷俘获。

    Thin film transistor and method of fabricating the same
    7.
    发明授权
    Thin film transistor and method of fabricating the same 有权
    薄膜晶体管及其制造方法

    公开(公告)号:US08466462B2

    公开(公告)日:2013-06-18

    申请号:US12369051

    申请日:2009-02-11

    IPC分类号: H01L29/10

    摘要: A thin film transistor (TFT) including a gate electrode, an active layer, and source and drain electrodes. The active layer includes contact regions that contact the source and drain electrodes, which are thinner than a remaining region of the active layer. The contact regions reduce the contact resistance between the active material layer and the source and drain electrodes.

    摘要翻译: 一种薄膜晶体管(TFT),其包括栅电极,有源层以及源极和漏极。 有源层包括与源极和漏极接触的接触区,其比有源层的剩余区域薄。 接触区域减小了活性材料层与源极和漏极之间的接触电阻。

    Oxide semiconductor thin film transistor, method of manufacturing the same, and organic electroluminescent device including the same
    8.
    发明授权
    Oxide semiconductor thin film transistor, method of manufacturing the same, and organic electroluminescent device including the same 有权
    氧化物半导体薄膜晶体管,其制造方法以及包含该氧化物半导体薄膜晶体管的有机电致发光器件

    公开(公告)号:US08319217B2

    公开(公告)日:2012-11-27

    申请号:US12873199

    申请日:2010-08-31

    IPC分类号: H01L29/12

    CPC分类号: H01L29/7869

    摘要: A thin film transistor including: a substrate; a gate electrode formed on the substrate; a gate insulating layer formed on the gate electrode and exposed portions of the substrate; an oxide semiconductor layer formed on the gate insulating layer to correspond to the gate electrode, and comprising an HfInZnO-based oxide semiconductor, wherein the oxide semiconductor layer has a Zn concentration gradient; and source and drain regions respectively formed on both sides of the oxide semiconductor layer and the gate insulating layer.

    摘要翻译: 1.一种薄膜晶体管,包括:基板; 形成在所述基板上的栅电极; 形成在所述栅电极上的栅极绝缘层和所述基板的露出部分; 形成在所述栅绝缘层上以对应于所述栅极的氧化物半导体层,并且包括HfInZnO基氧化物半导体,其中所述氧化物半导体层具有Zn浓度梯度; 以及分别形成在氧化物半导体层和栅极绝缘层的两侧上的源极和漏极区域。

    Organic light emitting display apparatus including a line connecting bridge and method of manufacturing the same
    9.
    发明授权
    Organic light emitting display apparatus including a line connecting bridge and method of manufacturing the same 有权
    包括线连接桥的有机发光显示装置及其制造方法

    公开(公告)号:US08304987B2

    公开(公告)日:2012-11-06

    申请号:US12926005

    申请日:2010-10-20

    IPC分类号: H01L51/50 H01L33/08

    摘要: An organic light emitting display apparatus and a method of fabricating the same are provided. The organic light emitting display apparatus includes a pixel unit on which an organic light emitting device is formed, a thin film transistor (TFT) electrically connected to the pixel unit and a data line and a scan line electrically connected to the TFT and disposed crossing each other on a substrate. The data line and the scan line are formed in one layer. A bridge that allows one of the data line and the scan line to bypass the other is on an intersection of the data line and the scan line.

    摘要翻译: 提供一种有机发光显示装置及其制造方法。 有机发光显示装置包括其上形成有机发光器件的像素单元,电连接到像素单元的薄膜晶体管(TFT),以及电连接到TFT并与TFT连接的数据线和扫描线 另一个在基底上。 数据线和扫描线形成在一层中。 允许数据线和扫描线之一绕过另一条线的桥是在数据线和扫描线的交点上。

    Smart card capable of sensing light
    10.
    发明授权
    Smart card capable of sensing light 有权
    智能卡能够感测光

    公开(公告)号:US07813175B2

    公开(公告)日:2010-10-12

    申请号:US11945502

    申请日:2007-11-27

    申请人: Min-Kyu Kim

    发明人: Min-Kyu Kim

    IPC分类号: G11C11/34

    CPC分类号: G06K19/0723

    摘要: A smart card is formed of a memory having light-sensing cells to sense externally supplied light and generate a detection signal in response to the externally supplied light being sensed by the light-sensing cells, and a reset control circuit generating a reset signal in response to the detection signal, the reset signal operating to reset the smart card.

    摘要翻译: 智能卡由具有光感测单元的存储器形成,用于感测外部供应的光并且响应于由感光单元感测到的外部供应的光产生检测信号;以及复位控制电路,响应于产生复位信号 对于检测信号,复位信号操作以复位智能卡。