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公开(公告)号：US12190947B2
公开(公告)日：2025-01-07
申请号：US17562598
申请日：2021-12-27
Applicant: Micron Technology, Inc.
Inventor： Jonathan J. Strand , Sukneet Singh Basuta , Shashank Bangalore Lakshman , Jonathan D. Harms
Abstract: Methods, systems, and devices for imprint recovery for memory arrays are described. In some cases, memory cells may become imprinted, which may refer to conditions where a cell becomes predisposed toward storing one logic state over another, resistant to being written to a different logic state, or both. Imprinted memory cells may be recovered using a recovery or repair process that may be initiated according to various conditions, detections, or inferences. In some examples, a system may be configured to perform imprint recovery operations that are scaled or selected according to a characterized severity of imprint, an operational mode, environmental conditions, and other factors. Imprint management techniques may increase the robustness, accuracy, or efficiency with which a memory system, or components thereof, can operate in the presence of conditions associated with memory cell imprinting.
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公开(公告)号：US12040038B2
公开(公告)日：2024-07-16
申请号：US18084892
申请日：2022-12-20
Applicant: Micron Technology, Inc.
Inventor： Jonathan D. Harms , Jonathan J. Strand , Sukneet Singh Basuta , Shashank Bangalore Lakshman
CPC classification number: G11C29/50004 , G11C11/221 , G11C11/2259 , G11C11/2273 , G11C11/2275 , G11C11/2293 , G11C2029/5004
Abstract: Methods, systems, and devices for imprint recovery for memory cells are described. In some cases, memory cells may become imprinted, which may refer to conditions where a cell becomes predisposed toward storing one logic state over another, resistant to being written to a different logic state, or both. Imprinted memory cells may be recovered using a recovery or repair process that may be initiated according to various conditions, detections, or inferences. In some examples, a system may be configured to perform imprint recovery operations that are scaled or selected according to a characterized severity of imprint, an operational mode, environmental conditions, and other factors. Imprint management techniques may increase the robustness, accuracy, or efficiency with which a memory system, or components thereof, can operate in the presence of conditions associated with memory cell imprinting.
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公开(公告)号：US20230187010A1
公开(公告)日：2023-06-15
申请号：US18084892
申请日：2022-12-20
Applicant: Micron Technology, Inc.
Inventor： Jonathan D. Harms , Jonathan J. Strand , Sukneet Singh Basuta , Shashank Bangalore Lakshman
CPC classification number: G11C29/50004 , G11C11/221 , G11C11/2275 , G11C11/2259 , G11C11/2273 , G11C11/2293 , G11C2029/5004
Abstract: Methods, systems, and devices for imprint recovery for memory cells are described. In some cases, memory cells may become imprinted, which may refer to conditions where a cell becomes predisposed toward storing one logic state over another, resistant to being written to a different logic state, or both. Imprinted memory cells may be recovered using a recovery or repair process that may be initiated according to various conditions, detections, or inferences. In some examples, a system may be configured to perform imprint recovery operations that are scaled or selected according to a characterized severity of imprint, an operational mode, environmental conditions, and other factors. Imprint management techniques may increase the robustness, accuracy, or efficiency with which a memory system, or components thereof, can operate in the presence of conditions associated with memory cell imprinting.
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公开(公告)号：US20210090681A1
公开(公告)日：2021-03-25
申请号：US16580972
申请日：2019-09-24
Applicant: Micron Technology, Inc.
Inventor： Jonathan D. Harms , Jonathan J. Strand , Sukneet Singh Basuta , Shashank Bangalore Lakshman
Abstract: Methods, systems, and devices for imprint recovery for memory cells are described. In some cases, memory cells may become imprinted, which may refer to conditions where a cell becomes predisposed toward storing one logic state over another, resistant to being written to a different logic state, or both. Imprinted memory cells may be recovered using a recovery or repair process that may be initiated according to various conditions, detections, or inferences. In some examples, a system may be configured to perform imprint recovery operations that are scaled or selected according to a characterized severity of imprint, an operational mode, environmental conditions, and other factors. Imprint management techniques may increase the robustness, accuracy, or efficiency with which a memory system, or components thereof, can operate in the presence of conditions associated with memory cell imprinting.
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公开(公告)号：US12230349B2
公开(公告)日：2025-02-18
申请号：US18129585
申请日：2023-03-31
Applicant: Micron Technology, Inc.
Inventor： Shashank Bangalore Lakshman , Jonathan D. Harms , Jonathan J. Strand , Sukneet Singh Basuta
Abstract: Methods, systems, and devices for imprint recovery management for memory systems are described. In some cases, memory cells may become imprinted, which may refer to conditions where a cell becomes predisposed toward storing one logic state over another, resistant to being written to a different logic state, or both. Imprinted memory cells may be recovered using a recovery or repair process that may be initiated according to various conditions, detections, or inferences. In some examples, a system may be configured to perform imprint recovery operations that are scaled or selected according to a characterized severity of imprint, an operational mode, environmental conditions, and other factors. Imprint management techniques may increase the robustness, accuracy, or efficiency with which a memory system, or components thereof, can operate in the presence of conditions associated with memory cell imprinting.
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Patent Agency Ranking
公开(公告)号：US20230253064A1
公开(公告)日：2023-08-10
申请号：US18129585
申请日：2023-03-31
Applicant: Micron Technology, Inc.
Inventor： Shashank Bangalore Lakshman , Jonathan D. Harms , Jonathan J. Strand , Sukneet Singh Basuta
CPC classification number: G11C29/50004 , G11C11/5628 , G11C11/5642 , G11C16/10 , G11C16/26 , G11C16/3427 , G11C29/50016 , G11C16/08 , G11C2029/5004
Abstract: Methods, systems, and devices for imprint recovery management for memory systems are described. In some cases, memory cells may become imprinted, which may refer to conditions where a cell becomes predisposed toward storing one logic state over another, resistant to being written to a different logic state, or both. Imprinted memory cells may be recovered using a recovery or repair process that may be initiated according to various conditions, detections, or inferences. In some examples, a system may be configured to perform imprint recovery operations that are scaled or selected according to a characterized severity of imprint, an operational mode, environmental conditions, and other factors. Imprint management techniques may increase the robustness, accuracy, or efficiency with which a memory system, or components thereof, can operate in the presence of conditions associated with memory cell imprinting.
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公开(公告)号：US11557371B2
公开(公告)日：2023-01-17
申请号：US17241893
申请日：2021-04-27
Applicant: Micron Technology, Inc.
Inventor： Jonathan D. Harms , Jonathan J. Strand , Sukneet Singh Basuta , Shashank Bangalore Lakshman
Abstract: Methods, systems, and devices for imprint recovery for memory cells are described. In some cases, memory cells may become imprinted, which may refer to conditions where a cell becomes predisposed toward storing one logic state over another, resistant to being written to a different logic state, or both. Imprinted memory cells may be recovered using a recovery or repair process that may be initiated according to various conditions, detections, or inferences. In some examples, a system may be configured to perform imprint recovery operations that are scaled or selected according to a characterized severity of imprint, an operational mode, environmental conditions, and other factors. Imprint management techniques may increase the robustness, accuracy, or efficiency with which a memory system, or components thereof, can operate in the presence of conditions associated with memory cell imprinting.
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公开(公告)号：US20220199155A1
公开(公告)日：2022-06-23
申请号：US17562598
申请日：2021-12-27
Applicant: Micron Technology, Inc.
Inventor： Jonathan J. Strand , Sukneet Singh Basuta , Shashank Bangalore Lakshman , Jonathan D. Harms
Abstract: Methods, systems, and devices for imprint recovery for memory arrays are described. In some cases, memory cells may become imprinted, which may refer to conditions where a cell becomes predisposed toward storing one logic state over another, resistant to being written to a different logic state, or both. Imprinted memory cells may be recovered using a recovery or repair process that may be initiated according to various conditions, detections, or inferences. In some examples, a system may be configured to perform imprint recovery operations that are scaled or selected according to a characterized severity of imprint, an operational mode, environmental conditions, and other factors. Imprint management techniques may increase the robustness, accuracy, or efficiency with which a memory system, or components thereof, can operate in the presence of conditions associated with memory cell imprinting.
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公开(公告)号：US20250054560A1
公开(公告)日：2025-02-13
申请号：US18750246
申请日：2024-06-21
Applicant: Micron Technology, Inc.
Inventor： Jonathan D. Harms , Jonathan J. Strand , Sukneet Singh Basuta , Shashank Bangalore Lakshman
Abstract: Methods, systems, and devices for imprint recovery for memory cells are described. In some cases, memory cells may become imprinted, which may refer to conditions where a cell becomes predisposed toward storing one logic state over another, resistant to being written to a different logic state, or both. Imprinted memory cells may be recovered using a recovery or repair process that may be initiated according to various conditions, detections, or inferences. In some examples, a system may be configured to perform imprint recovery operations that are scaled or selected according to a characterized severity of imprint, an operational mode, environmental conditions, and other factors. Imprint management techniques may increase the robustness, accuracy, or efficiency with which a memory system, or components thereof, can operate in the presence of conditions associated with memory cell imprinting.
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公开(公告)号：US12019506B2
公开(公告)日：2024-06-25
申请号：US16581045
申请日：2019-09-24
Applicant: Micron Technology, Inc.
Inventor： Sukneet Singh Basuta , Shashank Bangalore Lakshman , Jonathan D. Harms , Jonathan J. Strand
CPC classification number: G06F11/0793 , G06F11/0727 , G06F11/0751 , G06F11/1068 , G06F12/10 , G11C11/221 , G11C11/2253 , G11C11/2273 , G11C11/2275
Abstract: Methods, systems, and devices for imprint recovery management for memory systems are described. In some cases, memory cells may become imprinted, which may refer to conditions where a cell becomes predisposed toward storing one logic state over another, resistant to being written to a different logic state, or both. Imprinted memory cells may be recovered using a recovery or repair process that may be initiated according to various conditions, detections, or inferences. In some examples, a system may be configured to perform imprint recovery operations that are scaled or selected according to a characterized severity of imprint, an operational mode, environmental conditions, and other factors. Imprint management techniques may increase the robustness, accuracy, or efficiency with which a memory system, or components thereof, can operate in the presence of conditions associated with memory cell imprinting.
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