Invention Publication
- Patent Title: IMPRINT RECOVERY FOR MEMORY CELLS
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Application No.: US18084892Application Date: 2022-12-20
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Publication No.: US20230187010A1Publication Date: 2023-06-15
- Inventor: Jonathan D. Harms , Jonathan J. Strand , Sukneet Singh Basuta , Shashank Bangalore Lakshman
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- The original application number of the division: US17241893 2021.04.27
- Main IPC: G11C29/50
- IPC: G11C29/50 ; G11C11/22

Abstract:
Methods, systems, and devices for imprint recovery for memory cells are described. In some cases, memory cells may become imprinted, which may refer to conditions where a cell becomes predisposed toward storing one logic state over another, resistant to being written to a different logic state, or both. Imprinted memory cells may be recovered using a recovery or repair process that may be initiated according to various conditions, detections, or inferences. In some examples, a system may be configured to perform imprint recovery operations that are scaled or selected according to a characterized severity of imprint, an operational mode, environmental conditions, and other factors. Imprint management techniques may increase the robustness, accuracy, or efficiency with which a memory system, or components thereof, can operate in the presence of conditions associated with memory cell imprinting.
Public/Granted literature
- US12040038B2 Imprint recovery for memory cells Public/Granted day:2024-07-16
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