公开(公告)号：US20240074184A1

公开(公告)日：2024-02-29

申请号：US17897976

申请日：2022-08-29

Applicant: Micron Technology, Inc.

Inventor： Masaaki Higuchi ,  Yoshiaki Fukuzumi ,  Hirokazu Ishigaki

IPC: H01L27/11582 ,  G11C16/04 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157

CPC classification number: H01L27/11582 ,  G11C16/0483 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157

Abstract: An electronic device comprises memory pillars comprising a channel material. The memory pillars extend through both a cell region and a lateral contact region. A portion of the memory pillars in the lateral contact region comprise at least one first step and at least one second step. The electronic device comprises a source contact in direct contact with the channel material in the at least one second step of the portion of the memory pillars in the lateral contact region. Additional electronic devices and methods of forming an electronic device are also disclosed.