Abstract:
An electromagnetic relay having an armature-spring subassembly that matingly cooperates with a base body having stationary and moving contact elements and stationary terminal elements. The armature-spring subassembly includes a contact arrangement and an armature pivotably mounted to said contact arrangement. The contact arrangement includes two torsion spring ridges and a plurality of contact springs that are attached to both torsion spring ridges.
Abstract:
Electromagnetic, monostable, small relay has a rocker armature arranged between a base plate and a coil, the armature being mounted with its middle segment at the end of an L-shaped yoke, and forming a working air gap with a second yoke. Contact springs are connected with the armature, which work together with fixed contacts anchored in the base. A resetting spring is connected with the armature and prestresses the armature into a rest position on the first yoke. For stabilization of the construction, and for separation between a contact chamber and a coil chamber, a base body is provided with an H-shaped cross-section, which overlaps the base plate in an interleaving manner, and which forms supports for the terminal pins of the base plate on both sides of the armature. In this way, a monostable relay is created, which can have any of conventional soldering pin terminals, SMT terminals, or press-fit terminals.
Abstract:
An electromagnetic relay has a base with a contact arrangement and a rocker armature mounted on the base. Above the base, a magnet system with a coil, a core and two yokes is provided, this system working together with the rocker armature. At least the coil with the core is embedded in the insulating material of a basic body which surrounds the base in box-type fashion with side walls that are integrally formed downwardly, and forms a sealed contact chamber. By means of the basic body surrounding the coil, a high insulation strength of the relay between the coil and the contact system is ensured, as is a high stability of the construction.
Abstract:
A polarized magnetic relay has a base body, an armature, an envelope that encompasses insulating material, a coil, a core and a bar-shaped permanent magnet. The base plane is defined by the bottom side of a base body. The armature is arranged between two contact springs that lie parallel to each other in a common plane. Two transverse terminal webs, which have their sheet metal plane extending parallel to the base plane, extend out of the envelope in the area of the rotational axis of the armature and these terminal webs are respectively connected with a fastening tab that has its sheet metal plane extending perpendicular to the base plane. The contact springs exhibit two spring arms and a connecting web, respectively, which has its sheet metal plane extending perpendicular to the base plane. The spring arms exhibit a contact making part and a part that is embedded in the envelope. The part that is embedded in the envelope emerges into the connecting web.
Abstract:
An electromagnetic relay has a magnet system, a base, a movable contact element, stationary contact elements and contact terminal elements. The base is formed by a printed circuit board arrangement. A first printed circuit board of the printed circuit board arrangement thereby faces toward the magnet system, and a second printed circuit board of the printed circuit board arrangement forms a bottom side of the relay. Each of the two printed circuit boards has interconnects. The movable contact element is actuated by an armature and is arranged between the two printed circuit boards. An actuation element that transmits the movement of the armature onto the movable contact element has a pin-shaped end section projecting through a recess in the first printed circuit board. The contact terminal elements are pin-shaped and project through congruent recesses in the two printed circuit boards.
Abstract:
In an SOI semiconductor device, substrate diodes may be formed on the basis of a superior design of the contact level and the metallization layer, thereby avoiding the presence of metal lines connecting to both diode electrodes in the critical substrate diode area. To this end, contact trenches may be provided so as to locally connect one type of diode electrodes within the contact level. Consequently, additional process steps for planarizing the surface topography upon forming the contact level may be avoided.
Abstract:
In sophisticated metallization systems of semiconductor devices, a sensitive core metal, such as copper, may be efficiently confined by a conductive barrier material comprising a copper/silicon compound, such as a copper silicide, which may provide superior electromigration behavior and higher electrical conductivity compared to conventionally used tantalum/tantalum nitride barrier systems.
Abstract:
The method described herein involves the formation of metal silicide regions. The method may involve forming a layer of refractory metal on a structure comprising silicon, forming a layer of silicon on the layer of refractory metal and, after forming the layer of silicon, performing at least one heat treatment process to form a metal silicide region in the structure.
Abstract:
Dielectric cap layers of sophisticated high-k metal gate electrode structures may be efficiently removed on the basis of a sacrificial fill material, thereby reliably preserving integrity of a protective sidewall spacer structure, which in turn may result in superior uniformity of the threshold voltage of the transistors. The sacrificial fill material may be provided in the form of an organic material that may be reduced in thickness on the basis of a wet developing process, thereby enabling a high degree of process controllability.
Abstract:
In a replacement gate approach, a top area of a gate opening has a superior cross-sectional shape which is accomplished on the basis of a plasma assisted etch process or an ion sputter process. During the process, a sacrificial fill material protects sensitive materials, such as a high-k dielectric material and a corresponding cap material. Consequently, the subsequent deposition of a work function adjusting material layer may not result in a surface topography which may result in a non-reliable filling-in of the electrode metal. In some illustrative embodiments, the sacrificial fill material may also be used as a deposition mask for avoiding the deposition of the work function adjusting metal in certain gate openings in which a different type of work function adjusting species is required.