Invention Application
- Patent Title: Metallization Systems of Semiconductor Devices Comprising a Copper/Silicon Compound as a Barrier Material
- Patent Title (中): 包含铜/硅化合物作为阻挡材料的半导体器件的金属化系统
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Application No.: US13192164Application Date: 2011-07-27
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Publication No.: US20120153480A1Publication Date: 2012-06-21
- Inventor: Ronny Pfuetzner , Jens Heinrich
- Applicant: Ronny Pfuetzner , Jens Heinrich
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Priority: DE102010063294.5 20101216
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L21/768
Abstract:
In sophisticated metallization systems of semiconductor devices, a sensitive core metal, such as copper, may be efficiently confined by a conductive barrier material comprising a copper/silicon compound, such as a copper silicide, which may provide superior electromigration behavior and higher electrical conductivity compared to conventionally used tantalum/tantalum nitride barrier systems.
Public/Granted literature
- US08778795B2 Metallization systems of semiconductor devices comprising a copper/silicon compound as a barrier material Public/Granted day:2014-07-15
Information query
IPC分类:
