-
公开(公告)号：US11725176B2
公开(公告)日：2023-08-15
申请号：US17897489
申请日：2022-08-29
Applicant: Sanofi , Massachusetts Institute of Technology
Inventor： Shireen Goh , Rajeev Jagga Ram , Kevin Shao-Kwan Lee , Michelangelo Canzoneri , Horst Blum
CPC classification number: C12M41/44 , B01J19/0006 , C12M23/24 , C12M29/26 , C12M41/34
Abstract: Control of humidity in chemical reactors, and associated systems and methods, are generally described. In certain embodiments, the humidity within gas transport conduits and chambers can be controlled to inhibit unwanted condensation within gas transport pathways. By inhibiting condensation within gas transport pathways, clogging of such pathways can be limited (or eliminated) such that transport of gas can be more easily and controllably achieved. In addition, strategies for purging condensed liquid from chemical reactor systems are also described.
-
公开(公告)号：US11105974B2
公开(公告)日：2021-08-31
申请号：US15332872
申请日：2016-10-24
Applicant: Massachusetts Institute of Technology
Inventor： Luca Alloatti , Rajeev Jagga Ram
IPC: G02B6/12 , H01L31/103 , G02B6/122 , G02B6/30 , G02B6/134 , G02B6/13 , G02B6/42 , H01L31/0232 , H01L21/8238 , H01L29/49 , H01L29/78
Abstract: A waveguide-coupled Silicon Germanium (SiGe) photodetector. A p-n silicon junction is formed in a silicon substrate by an n-doped silicon region and a p-doped silicon region, a polysilicon rib is formed on the silicon substrate to provide a waveguide core for an optical mode of radiation, and an SiGe pocket is formed in the silicon substrate along a length of the polysilicon rib and contiguous with the p-n silicon junction. An optical mode of radiation, when present, substantially overlaps with the SiGe pocket so as to generate photocarriers in the SiGe pocket. An electric field arising from the p-n silicon junction significantly facilitates a flow of the generated photocarriers through the SiGe pocket. In one example, such photodetectors have been fabricated using a standard CMOS semiconductor process technology without requiring changes to the process flow (i.e., “zero-change CMOS”).
-
公开(公告)号：US10479973B2
公开(公告)日：2019-11-19
申请号：US14913734
申请日：2014-08-22
Applicant: Massachusetts Institute of Technology , Sanofi
Inventor： Shireen Goh , Rajeev Jagga Ram , Michelangelo Canzoneri , Horst Blum
Abstract: Control of volume in bioreactors and associated systems is generally described. Feeding and/or sampling strategies can be employed, in some embodiments, such that the working volume within the bioreactor remains substantially constant.
-
4.发明申请公开(公告)号：US20200063082A1
公开(公告)日：2020-02-27
申请号：US16673805
申请日：2019-11-04
Applicant: Massachusetts Institute of Technology , Sanofi
Inventor： Shireen Goh , Rajeev Jagga Ram , Michelangelo Canzoneri , Horst Blum
Abstract: Control of volume in bioreactors and associated systems is generally described. Feeding and/or sampling strategies can be employed, in some embodiments, such that the working volume within the bioreactor remains substantially contstant.
-
公开(公告)号：US10514504B2
公开(公告)日：2019-12-24
申请号：US15902455
申请日：2018-02-22
Applicant: Massachusetts Institute of Technology
Inventor： Jason Scott Orcutt , Karan Kartik Mehta , Rajeev Jagga Ram , Amir Hossein Atabaki
Abstract: Conventional approaches to integrating waveguides within standard electronic processes typically involve using a dielectric layer, such as polysilicon, single-crystalline silicon, or silicon nitride, within the in-foundry process or depositing and patterning a dielectric layer in the backend as a post-foundry process. In the present approach, the back-end of the silicon handle is etched away after in-foundry processing to expose voids or trenches defined using standard in-foundry processing (e.g., complementary metal-oxide-semiconductor (CMOS) processing). Depositing dielectric material into a void or trench yields an optical waveguide integrated within the front-end of the wafer. For example, a shallow trench isolation (STI) layer formed in-foundry may serve as a high-resolution patterning waveguide template in a damascene process within the front end of a die or wafer. Filling the trench with a high-index dielectric material yields a waveguide that can guide visible and/or infrared light, depending on the waveguide's dimensions and refractive index contrast.
-
Patent Agency Ranking
公开(公告)号：US20140127802A1
公开(公告)日：2014-05-08
申请号：US14063967
申请日：2013-10-25
Applicant: Massachusetts Institute of Technology
Inventor： Shireen Goh , Rajeev Jagga Ram , Michelangelo Canzoneri , Horst Blum
CPC classification number: C12M41/34 , B01L3/502723 , C12M23/24 , C12M23/26 , C12M23/34 , C12M29/04 , C12M41/26 , C12M41/32 , C12M41/44
Abstract: Strategies to control the level of dissolved carbon dioxide (CO2) concentrations and/or pH in small volume reactor chambers, and associated articles, systems, and methods, are generally provided. In certain embodiments, the reactor chambers can be configured to contain at least one biological cell.
Abstract translation: 通常提供了控制小体积反应器室中的溶解二氧化碳（CO 2）浓度和/或pH值以及相关物品，系统和方法的策略。 在某些实施方案中，反应器室可被配置成容纳至少一个生物细胞。
-
公开(公告)号：US11827871B2
公开(公告)日：2023-11-28
申请号：US16673805
申请日：2019-11-04
Applicant: Massachusetts Institute of Technology , Sanofi
Inventor： Shireen Goh , Rajeev Jagga Ram , Michelangelo Canzoneri , Horst Blum
Abstract: Control of volume in bioreactors and associated systems is generally described. Feeding and/or sampling strategies can be employed, in some embodiments, such that the working volume within the bioreactor remains substantially constant.
-
公开(公告)号：US20220411741A1
公开(公告)日：2022-12-29
申请号：US17897489
申请日：2022-08-29
Applicant: Sanofi , Massachusetts Institute of Technology
Inventor： Shireen Goh , Rajeev Jagga Ram , Kevin Shao-Kwan Lee , Michelangelo Canzoneri , Horst Blum
Abstract: Control of humidity in chemical reactors, and associated systems and methods, are generally described. In certain embodiments, the humidity within gas transport conduits and chambers can be controlled to inhibit unwanted condensation within gas transport pathways. By inhibiting condensation within gas transport pathways, clogging of such pathways can be limited (or eliminated) such that transport of gas can be more easily and controllably achieved. In addition, strategies for purging condensed liquid from chemical reactor systems are also described.
-
公开(公告)号：US10374118B2
公开(公告)日：2019-08-06
申请号：US15332877
申请日：2016-10-24
Applicant: Massachusetts Institute of Technology
Inventor： Luca Alloatti , Rajeev Jagga Ram , Dinis Cheian
IPC: H01L27/14 , H01L31/18 , G02B6/12 , G02B6/293 , H01L31/0224 , H01L31/0232 , H01L31/0312 , H01L31/0352 , H01L31/11 , H01L31/103
Abstract: Semiconductor devices, such as photonics devices, employ substantially curved-shaped Silicon-Germanium (SiGe) structures and are fabricated using zero-change CMOS fabrication process technologies. In one example, a closed-loop resonator waveguide-coupled photodetector includes a silicon resonator structure formed in a silicon substrate, interdigitated n-doped well-implant regions and p-doped well-implant regions forming multiple silicon p-n junctions around the silicon resonator structure, and a closed-loop SiGe photocarrier generation region formed in a pocket within the interdigitated n-doped and p-doped well implant regions. The closed-loop SiGe region is located so as to substantially overlap with an optical mode of radiation when present in the silicon resonator structure, and traverses the multiple silicon p-n junctions around the silicon resonator structure. Electric fields arising from the respective p-n silicon junctions significantly facilitate a flow of the generated photocarriers between electric contact regions of the photodetector.
-
公开(公告)号：US10043925B2
公开(公告)日：2018-08-07
申请号：US15250594
申请日：2016-08-29
Applicant: Massachusetts Institute of Technology
Inventor： Rajeev Jagga Ram , Jason Scott Orcutt , Huaiyu Meng , Amir H. Atabaki
IPC: H01L31/0232 , H01L27/144 , H01L31/0352 , H01L31/0368 , H01L31/103
Abstract: Guided-wave photodetectors based on absorption of infrared photons by mid-bandgap states in non-crystal semiconductors. In one example, a resonant guided-wave photodetector is fabricated based on a polysilicon layer used for the transistor gate in a SOI CMOS process without any change to the foundry process flow (‘zero-change’ CMOS). Mid-bandgap defect states in the polysilicon absorb infrared photons. Through a combination of doping mask layers, a lateral p-n junction is formed in the polysilicon, and a bias voltage applied across the junction creates a sufficiently strong electric field to enable efficient photo-generated carrier extraction and high-speed operation. An example device has a responsivity of more than 0.14 A/W from 1300 to 1600 nm, a 10 GHz bandwidth, and 80 nA dark current at 15 V reverse bias.
-
-
-
-
-
-
-
-
-
Search Results
23
records
(took 0.021 seconds)
