公开(公告)号：US20190326468A1

公开(公告)日：2019-10-24

申请号：US16376086

申请日：2019-04-05

Applicant: Massachusetts Institute of Technology

Inventor： Luca Alloatti ,  Rajeev Jaga Ram ,  Dinis Cheian

IPC: H01L31/18 ,  H01L31/103 ,  H01L31/0232 ,  H01L31/0224 ,  G02B6/12 ,  H01L31/11 ,  G02B6/293 ,  H01L31/0312 ,  H01L31/0352

Abstract: Semiconductor devices, such as photonics devices, employ substantially curved-shaped Silicon-Germanium (SiGe) structures and are fabricated using zero-change CMOS fabrication process technologies. In one example, a closed-loop resonator waveguide-coupled photodetector includes a silicon resonator structure formed in a silicon substrate, interdigitated n-doped well-implant regions and p-doped well-implant regions forming multiple silicon p-n junctions around the silicon resonator structure, and a closed-loop SiGe photocarrier generation region formed in a pocket within the interdigitated n-doped and p-doped well implant regions. The closed-loop SiGe region is located so as to substantially overlap with an optical mode of radiation when present in the silicon resonator structure, and traverses the multiple silicon p-n junctions around the silicon resonator structure. Electric fields arising from the respective p-n silicon junctions significantly facilitate a flow of the generated photocarriers between electric contact regions of the photodetector.

公开(公告)号：US10978608B2

公开(公告)日：2021-04-13

申请号：US16376086

申请日：2019-04-05

Applicant: Massachusetts Institute of Technology

Inventor： Luca Alloatti ,  Rajeev Jagga Ram ,  Dinis Cheian

IPC: H01L27/14 ,  H01L31/18 ,  H01L31/0232 ,  H01L31/103 ,  G02B6/12 ,  G02B6/293 ,  H01L31/0224 ,  H01L31/0312 ,  H01L31/0352 ,  H01L31/11

Abstract: Semiconductor devices, such as photonics devices, employ substantially curved-shaped Silicon-Germanium (SiGe) structures and are fabricated using zero-change CMOS fabrication process technologies. In one example, a closed-loop resonator waveguide-coupled photodetector includes a silicon resonator structure formed in a silicon substrate, interdigitated n-doped well-implant regions and p-doped well-implant regions forming multiple silicon p-n junctions around the silicon resonator structure, and a closed-loop SiGe photocarrier generation region formed in a pocket within the interdigitated n-doped and p-doped well implant regions. The closed-loop SiGe region is located so as to substantially overlap with an optical mode of radiation when present in the silicon resonator structure, and traverses the multiple silicon p-n junctions around the silicon resonator structure. Electric fields arising from the respective p-n silicon junctions significantly facilitate a flow of the generated photocarriers between electric contact regions of the photodetector.

公开(公告)号：US10374118B2

公开(公告)日：2019-08-06

申请号：US15332877

申请日：2016-10-24

Applicant: Massachusetts Institute of Technology

Inventor： Luca Alloatti ,  Rajeev Jagga Ram ,  Dinis Cheian

IPC: H01L27/14 ,  H01L31/18 ,  G02B6/12 ,  G02B6/293 ,  H01L31/0224 ,  H01L31/0232 ,  H01L31/0312 ,  H01L31/0352 ,  H01L31/11 ,  H01L31/103

Abstract: Semiconductor devices, such as photonics devices, employ substantially curved-shaped Silicon-Germanium (SiGe) structures and are fabricated using zero-change CMOS fabrication process technologies. In one example, a closed-loop resonator waveguide-coupled photodetector includes a silicon resonator structure formed in a silicon substrate, interdigitated n-doped well-implant regions and p-doped well-implant regions forming multiple silicon p-n junctions around the silicon resonator structure, and a closed-loop SiGe photocarrier generation region formed in a pocket within the interdigitated n-doped and p-doped well implant regions. The closed-loop SiGe region is located so as to substantially overlap with an optical mode of radiation when present in the silicon resonator structure, and traverses the multiple silicon p-n junctions around the silicon resonator structure. Electric fields arising from the respective p-n silicon junctions significantly facilitate a flow of the generated photocarriers between electric contact regions of the photodetector.