公开(公告)号：US08449676B2

公开(公告)日：2013-05-28

申请号：US12430311

申请日：2009-04-27

申请人： Masanori Fukui ,  Hiroshi Kishi

发明人： Masanori Fukui ,  Hiroshi Kishi

IPC分类号： C30B35/00 ,  C30B11/00 ,  C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： C30B15/10 ,  C30B35/002 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1032 ,  Y10T117/1052

摘要： A silica glass crucible having a sidewall portion and a bottom portion is provided with a first synthetic silica glass layer constituting an inner layer at least in the sidewall portion, a second synthetic silica glass layer constituting an inner layer at least in a region including a center of the bottom portion, and a natural silica glass layer constituting an outer layer in the sidewall portion and the bottom portion. A melting rate of the second synthetic silica glass layer with respect to a silicon melt is higher than that of the first synthetic silica glass layer. An aluminum concentration of the second synthetic silica glass layer is higher than that of the first synthetic silica glass layer.

摘要翻译： 具有侧壁部和底部的石英玻璃坩埚具有至少在侧壁部中构成内层的第一合成石英玻璃层，至少在包括中心的区域中构成内层的第二合成石英玻璃层 和在侧壁部和底部构成外层的天然石英玻璃层。 第二合成石英玻璃层相对于硅熔体的熔融率高于第一合成石英玻璃层的熔融速度。 第二合成石英玻璃层的铝浓度高于第一合成石英玻璃层的铝浓度。

公开(公告)号：US08240169B2

公开(公告)日：2012-08-14

申请号：US12684178

申请日：2010-01-08

申请人： Masanori Fukui ,  Hiroshi Kishi ,  Masaki Morikawa

发明人： Masanori Fukui ,  Hiroshi Kishi ,  Masaki Morikawa

IPC分类号： C03B19/06 ,  H05B7/22

CPC分类号： C03B19/095 ,  H05B7/085

摘要： A vitreous silica crucible manufacturing apparatus includes a plurality of carbon electrodes configured to heat and melt raw material powder by arc discharge, and a value of a ratio R2/R1 of a diameter R2 of a front end of each of the carbon electrodes to a diameter R1 of a base end is set in a range of 0.6 to 0.8. Each carbon electrode has a diameter reduction portion formed at a front end position and reduced in diameter from a diameter R3 of a base end side to the diameter R2 of the front end. When a length of the diameter reduction portion is L1, the diameter of the front end is R2, the diameter of the base end is R1, an angle between the axis lines of the carbon electrodes is θ1, and X=(R1−R2)/2, a value of L1−(X/tan(θ1/2)) is set in a range of 50 to 150 mm.

摘要翻译： 玻璃状石英玻璃坩埚的制造装置具有多个碳电极，其通过电弧放电来加热和熔化原料粉末，并且每个碳电极的前端的直径R2的比R2 / R1的值与直径 基端的R1设定在0.6〜0.8的范围内。 每个碳电极具有形成在前端位置并且从基端侧的直径R3到前端的直径R2的直径减小的直径减小部分。 当直径减小部分的长度为L1时，前端的直径为R2，基端的直径为R1，碳电极的轴线之间的角度为1; X =（R1- R2）/ 2，将L1-（X / tan（＆amp; 1/2））的值设定在50〜150mm的范围内。

公开(公告)号：US07160387B2

公开(公告)日：2007-01-09

申请号：US10781682

申请日：2004-02-20

申请人： Hiroshi Kishi ,  Masanori Fukui ,  Yoshiyuki Tsuji

发明人： Hiroshi Kishi ,  Masanori Fukui ,  Yoshiyuki Tsuji

IPC分类号： C30B13/06

CPC分类号： C03C3/06 ,  C03B19/095 ,  C03B2201/03 ,  C30B15/10 ,  C30B29/06 ,  Y10S117/90 ,  Y10T117/1032 ,  Y10T117/1052

摘要： This invention provides a high purity silica crucible having low impurity concentration in its inner portion, and its production method. The crucible, in which at least each content of Na and Li being contained in the depth of 1 mm from the inside surface is less than 0.05 ppm, is given by a production method of a high purity silica glass crucible, wherein a purity of the melted silica powder layer is increased by applying a voltage between a mold and an arc electrode to move impurity metals being contained in the melted silica glass layer to the outside, when the silica crucible is produced by arc plasma heating a raw material powder of silica in an inside surface of a hollow rotary mold. The method comprises, keeping an arc electrode potential of within ±500 V during an arc melting, applying a voltage of from −1000 V to −20000 V to a mold being insulated to the ground, and applying a high voltage to the un-melted silica powder layer of the outside.

摘要翻译： 本发明提供了内部杂质浓度低的高纯度二氧化硅坩埚及其制造方法。 通过高纯度二氧化硅玻璃坩埚的制造方法给出至少含有内表面1mm以内的Na和Li的含量小于0.05ppm的坩埚，其中，纯度为 通过在模具和电弧电极之间施加电压来增加熔融二氧化硅粉末层，以将熔融石英玻璃层中所含的杂质金属移动到外部，当通过电弧等离子体加热二氧化硅原料粉末 中空旋转模具的内表面。 该方法包括：在电弧熔化期间将电弧电极电位保持在±500V以内，向-1000V至-20000V施加电压至与地绝缘的模具，并将高电压施加到未熔化 二氧化硅粉末层外面。

公开(公告)号：US20100170298A1

公开(公告)日：2010-07-08

申请号：US12684178

申请日：2010-01-08

申请人： Masanori Fukui ,  Hiroshi Kishi ,  Masaki Morikawa

发明人： Masanori Fukui ,  Hiroshi Kishi ,  Masaki Morikawa

IPC分类号： C03B19/06

CPC分类号： C03B19/095 ,  H05B7/085

摘要： A vitreous silica crucible manufacturing apparatus includes a plurality of carbon electrodes configured to heat and melt raw material powder by arc discharge, and a value of a ratio R2/R1 of a diameter R2 of a front end of each of the carbon electrodes to a diameter R1 of a base end is set in a range of 0.6 to 0.8. Each carbon electrode has a diameter reduction portion formed at a front end position and reduced in diameter from a diameter R3 of a base end side to the diameter R2 of the front end. When a length of the diameter reduction portion is L1, the diameter of the front end is R2, the diameter of the base end is R1, an angle between the axis lines of the carbon electrodes is θ1, and X=(R1−R2)/2, a value of L1−(X/tan(θ1/2)) is set in a range of 50 to 150 mm.

摘要翻译： 玻璃状石英玻璃坩埚的制造装置具有多个碳电极，其通过电弧放电来加热和熔化原料粉末，并且每个碳电极的前端的直径R2的比R2 / R1的值与直径 基端的R1设定在0.6〜0.8的范围内。 每个碳电极具有形成在前端位置并且从基端侧的直径R3到前端的直径R2的直径减小的直径减小部分。 当直径减小部分的长度为L1时，前端的直径为R2，基端的直径为R1，碳电极的轴线之间的角度为1; X =（R1- R2）/ 2，将L1-（X / tan（＆amp; 1/2））的值设定在50〜150mm的范围内。

公开(公告)号：US20100126407A1

公开(公告)日：2010-05-27

申请号：US12694661

申请日：2010-01-27

申请人： Hiroshi Kishi ,  Masanori Fukui

发明人： Hiroshi Kishi ,  Masanori Fukui

IPC分类号： C30B15/30

CPC分类号： C30B29/06 ,  C03C3/06 ,  C30B15/10 ,  C30B35/002 ,  Y10T117/1024

摘要： A silica glass crucible used for pulling single-crystal silicon, which includes a cylindrical straight body part, a bottom part and a curved part located between the straight body part and the bottom part, wherein the curvature radius of the inner wall surface of the curved part is 100 to 240 mm. Variation of the wall thickness W of the curved part is preferably 0.1 to 1.4 mm/cm.

摘要翻译： 一种用于拉拔单晶硅的石英玻璃坩埚，其包括圆柱形直体部分，底部和位于直体部分和底部之间的弯曲部分，其中弯曲的内壁表面的曲率半径 部分是100到240毫米。 弯曲部的壁厚W的变化优选为0.1〜1.4mm / cm。

公开(公告)号：US20050000404A1

公开(公告)日：2005-01-06

申请号：US10781682

申请日：2004-02-20

申请人： Hiroshi Kishi ,  Masanori Fukui ,  Yoshiyuki Tsuji

发明人： Hiroshi Kishi ,  Masanori Fukui ,  Yoshiyuki Tsuji

IPC分类号： C03B20/00 ,  C03B19/09 ,  C30B15/00 ,  C30B15/10 ,  C30B29/06 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： C03C3/06 ,  C03B19/095 ,  C03B2201/03 ,  C30B15/10 ,  C30B29/06 ,  Y10S117/90 ,  Y10T117/1032 ,  Y10T117/1052

摘要： This invention provides a high purity silica crucible having low impurity concentration in its inner portion, and its production method. The crucible, in which at least each content of Na and Li being contained in the depth of 1 mm from the inside surface is less than 0.05 ppm, is given by a production method of a high purity silica glass crucible, wherein a purity of the melted silica powder layer is increased by applying a voltage between a mold and an arc electrode to move impurity metals being contained in the melted silica glass layer to the outside, when the silica crucible is produced by arc plasma heating a raw material powder of silica in an inside surface of a hollow rotary mold. The method comprises, keeping an arc electrode potential of within ±500 V during an arc melting, applying a voltage of from −1000 V to −20000 V to a mold being insulated to the ground, and applying a high voltage to the un-melted silica powder layer of the outside.

摘要翻译： 本发明提供了内部杂质浓度低的高纯度二氧化硅坩埚及其制造方法。 通过高纯度二氧化硅玻璃坩埚的制造方法给出至少含有内表面1mm以内的Na和Li的含量小于0.05ppm的坩埚，其中， 通过在模具和电弧电极之间施加电压来增加熔融二氧化硅粉末层，以将熔融石英玻璃层中所含的杂质金属移动到外部，当通过电弧等离子体加热二氧化硅原料粉末 中空旋转模具的内表面。 该方法包括：在电弧熔化期间将电弧电极电位保持在±500V以内，向-1000V至-20000V施加电压至与地绝缘的模具，并将高电压施加到未熔化 二氧化硅粉末层外面。

公开(公告)号：US08657957B2

公开(公告)日：2014-02-25

申请号：US12564197

申请日：2009-09-22

申请人： Hiroshi Kishi ,  Masanori Fukui ,  Masaki Morikawa

发明人： Hiroshi Kishi ,  Masanori Fukui ,  Masaki Morikawa

IPC分类号： C30B35/00 ,  C30B11/00 ,  C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： C03B19/095 ,  C30B11/002 ,  C30B15/10 ,  C30B35/002 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1032 ,  Y10T117/1068 ,  Y10T117/1072

摘要： A method of manufacturing a fused silica crucible by heating and melting a vitreous silica powder compact shaped into a mold using arc discharge of electrodes arranged around a rotation shaft of the mold, includes the steps of: arranging the electrodes in a ring shape, and setting a ratio W/R of a horizontal distance W between the electrode front end and the surface of the vitreous silica powder compact to a vitreous silica powder compact opening radius R, for at least a predetermined time during arc heating, to be in the range of 0.002 to 0.98.

摘要翻译： 通过使用设置在模具的旋转轴周围的电极的电弧放电加热熔融成型为模具的玻璃状二氧化硅粉末压块，制造石英坩埚的方法包括以下步骤：将电极布置成环形，并设置 电极前端与玻璃状二氧化硅粉末的表面之间的水平距离W的比W / R与电石加压时的至少一定时间成形为玻璃状二氧化硅粉末的开口半径R的比例为 0.002〜0.98。

公开(公告)号：US08416833B2

公开(公告)日：2013-04-09

申请号：US12563374

申请日：2009-09-21

申请人： Hiroshi Kishi ,  Masanori Fukui ,  Masaki Morikawa

发明人： Hiroshi Kishi ,  Masanori Fukui ,  Masaki Morikawa

IPC分类号： C03B5/027 ,  C03B19/01 ,  C03B19/06

CPC分类号： H05B7/085 ,  C03B19/095

摘要： An arc discharge method includes the steps of heating and melting a non-conductive object by arc discharge using a plurality of carbon electrodes in a output range of 300 to 12,000 kVA; and setting a ratio of the distance between a contact position at which the carbon electrodes come in contact with each other and a front end to the diameter of the carbon electrode during the start of the arc discharge to be in the range of 0.001 and 0.9.

摘要翻译： 电弧放电方法包括以下步骤：使用多个碳电极在300〜12000kVA的输出范围内通过电弧放电来加热和熔融非导电物体; 并且在电弧放电开始期间设定碳电极彼此接触的接触位置与前端与碳电极的直径之间的距离的比率在0.001和0.9的范围内。

公开(公告)号：US06911080B2

公开(公告)日：2005-06-28

申请号：US10682112

申请日：2003-10-10

申请人： Hiroshi Kishi ,  Minoru Kanda ,  Masanori Fukui

发明人： Hiroshi Kishi ,  Minoru Kanda ,  Masanori Fukui

IPC分类号： C03B20/00 ,  C30B15/10 ,  C30B15/20 ,  C30B15/22 ,  C30B29/06 ,  C30B35/00 ,  G01N33/38

CPC分类号： C30B15/10 ,  C30B35/002 ,  G01N33/386 ,  Y10S117/90 ,  Y10T117/1004 ,  Y10T117/1032 ,  Y10T428/131 ,  Y10T428/1314

摘要： A evaluation process of a vibration level at the surface of silicon melt held in a silica glass crucible is provided by setting in the vacuum furnace, the test piece of the silica glass cut out from a silica glass crucible, melting a little amount of silicon put on said piece of the glass, and measuring a vibration cycle of the silicon melt. Moreover, a silica glass crucible not causing the vibration at the surface of the silicon melt held in the silica glass crucible is also provided, wherein the vibration cycle of a silica glass of a side wall of the crucible is controlled at more than ⅙ seconds.

摘要翻译： 在石英玻璃坩埚中保存的硅熔体表面的振动水平的评价过程通过在真空炉中放置，将石英玻璃试样从石英玻璃坩埚切出，熔化少量硅 在所述玻璃片上测量硅熔体的振动周期。 此外，还提供了不引起保持在石英玻璃坩埚中的硅熔体表面的振动的石英玻璃坩埚，其中坩埚侧壁的石英玻璃的振动周期被控制在大于1/6 秒。

公开(公告)号：US08715415B2

公开(公告)日：2014-05-06

申请号：US12752374

申请日：2010-04-01

申请人： Makiko Kodama ,  Hiroshi Kishi ,  Minoru Kanda

发明人： Makiko Kodama ,  Hiroshi Kishi ,  Minoru Kanda

IPC分类号： C30B15/10

CPC分类号： C30B15/10 ,  C30B29/06 ,  C30B35/002

摘要： Provided is a vitreous silica crucible for pulling silicon single crystals, which can melt a silicon raw material in a short time and improve production yield of silicon single crystals by temporal change of an opaque vitreous silica layer. The vitreous silica crucible includes an opaque vitreous silica layer(11) provided on an outer surface thereof and containing plural bubbles, and a transparent vitreous silica layer(12) provided on an inner surface and not containing bubbles substantially. The opaque vitreous silica layer(11) has a bubble diameter distribution in which the content of bubbles having a diameter of less than 40 μm is 10% or more and less than 30%, the content of bubbles having a diameter of 40 μm or more and less than 90 μm is 40% or more and less than 80%, and the content of bubbles having a diameter equal to or more than 90 μm is 10% or more and less than 30%. Relatively small bubbles contained in the opaque vitreous silica layer(11) contribute to the thermal conductivity of a crucible at an initial pulling stage, and relatively large bubbles contained in the opaque vitreous silica layer are expanded through a long-term pulling process to thereby largely contribute to the warmth retaining property of the crucible at a later pulling stage.

摘要翻译： 本发明提供一种用于拉伸硅单晶的石英玻璃坩埚，其可以在短时间内熔化硅原料，并且通过不透明氧化硅玻璃层的时间变化提高硅单晶的产率。 石英玻璃坩埚包括设置在其外表面并且包含多个气泡的不透明玻璃状石英层（11），以及设置在内表面上且基本上不含有气泡的透明玻璃状石英层（12）。 不透明玻璃状石英层（11）具有气泡直径分布，其中直径小于40μm的气泡的含量为10％以上且小于30％，气泡的直径为40μm以上 小于90μm的是40％以上且小于80％，直径等于或大于90μm的气泡的含量为10％以上且小于30％。 包含在不透明玻璃状二氧化硅层（11）中的相对小的气泡有助于在初始拉伸阶段的坩埚的导热性，并且通过长期拉伸工艺使包含在不透明玻璃状二氧化硅层中的相对大的气泡膨胀，从而大大地扩大 有助于在稍后的拉动阶段坩埚的保温性能。