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    TRANSMISSION RATE MANAGEMENT METHOD AND DEVICE
    1.
    发明公开
    TRANSMISSION RATE MANAGEMENT METHOD AND DEVICE 审中-公开

    公开(公告)号：US20230246974A1

    公开(公告)日：2023-08-03

    申请号：US17587028

    申请日：2022-01-28

    Applicant: MEDIATEK INC.

    Inventor： Yuan-Ting HUANG ,  Kai-Wen LIU ,  Yu-Hua HUANG

    IPC: H04L47/25

    CPC classification number: H04L47/25

    Abstract: A transmission rate management method is provided. The transmission rate management method is applied to a transmission rate management device. The transmission rate management method includes the steps of calculating a total available data traffic of the transmission rate management device based on a data plan for the transmission rate management device, wherein the total available data traffic corresponds to a period of time; allocating to each of one or more client devices currently connected to the transmission rate management device one available data traffic corresponding to the period of time according to the total available data traffic; and adjusting a transmission rate of a client device of the one or more client devices based on a remaining data traffic of the available data traffic of the client device.

    APPARATUSES AND METHODS FOR COORDINATING OPERATIONS ASSOCIATED WITH MULTIPLE SUBSCRIBER IDENTITIES
    2.
    发明公开
    APPARATUSES AND METHODS FOR COORDINATING OPERATIONS ASSOCIATED WITH MULTIPLE SUBSCRIBER IDENTITIES 审中-公开

    公开(公告)号：US20230144874A1

    公开(公告)日：2023-05-11

    申请号：US18152959

    申请日：2023-01-11

    Applicant: MEDIATEK INC.

    Inventor： Yu-Hua HUANG ,  Chin-Wei HSU

    IPC: H04W76/16 ,  H04W80/08 ,  H04W8/20 ,  H04W76/27

    CPC classification number: H04W76/16 ,  H04W80/08 ,  H04W8/20 ,  H04W76/27

    Abstract: A mobile communication device including a Radio Frequency (RF) device and a controller is provided. The controller provides a Packet-Switched (PS) data service using a first subscriber identity via the RF device, establishes a Radio Resource Control (RRC) connection using a second subscriber identity via the RF device to enable the mobile communication device to enter an RRC connected mode associated with the second subscriber identity, receives a notification of an incoming Circuit-Switched (CS) Mobile Terminated (MT) call for the second subscriber identity via the RF device, and (after receiving the notification of the incoming CS MT call for the second subscriber identity) keeps the mobile communication device in the RRC connected mode associated with the second subscriber identity while providing the PS data service using the first subscriber identity.

    SEMICONDUCTOR PACKAGE ASSEMBLY WITH THROUGH SILICON VIA INTERCONNECT
    3.
    发明申请
    SEMICONDUCTOR PACKAGE ASSEMBLY WITH THROUGH SILICON VIA INTERCONNECT 有权
    半导体封装通过互连的硅组件组装

    公开(公告)号：US20160181201A1

    公开(公告)日：2016-06-23

    申请号：US14963451

    申请日：2015-12-09

    Applicant: MediaTek Inc.

    Inventor： Ming-Tzong YANG ,  Cheng-Chou HUNG ,  Wei-Che HUANG ,  Yu-Hua HUANG ,  Tzu-Hung LIN ,  Kuei-Ti CHAN ,  Ruey-Beei WU ,  Kai-Bin WU

    IPC: H01L23/538 ,  H01L25/065

    CPC classification number: H01L23/5384 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49838 ,  H01L23/5386 ,  H01L24/14 ,  H01L25/0657 ,  H01L2224/16146 ,  H01L2225/06541 ,  H01L2225/06544

    Abstract: The invention provides a semiconductor package assembly with a TSV interconnect. The semiconductor package assembly includes a first semiconductor die mounted on a base. The first semiconductor die includes a semiconductor substrate. A first array of TSV interconnects and a second array of TSV interconnects are formed through the semiconductor substrate, wherein the first array and second array of TSV interconnects are separated by an interval region. A first ground TSV interconnect is disposed within the interval region. A second semiconductor die is mounted on the first semiconductor die, having a ground pad thereon. The first ground TSV interconnect of the first semiconductor die has a first terminal coupled to the ground pad of the second semiconductor die and a second terminal coupled to an interconnection structure disposed on a front side of the semiconductor substrate.

    Abstract translation: 本发明提供一种具有TSV互连的半导体封装组件。 半导体封装组件包括安装在基座上的第一半导体管芯。 第一半导体管芯包括半导体衬底。 通过半导体衬底形成TSV互连的第一阵列和TSV互连的第二阵列，其中TSV互连的第一阵列和第二阵列被间隔区隔开。 第一接地TSV互连设置在间隔区域内。 第二半导体管芯安装在第一半导体管芯上，其上具有接地焊盘。 第一半导体管芯的第一接地TSV互连具有耦合到第二半导体管芯的接地焊盘的第一端子和耦合到布置在半导体衬底的前侧上的互连结构的第二端子。

    RADIO-FREQUENCY DEVICE PACKAGE AND METHOD FOR FABRICATING THE SAME
    5.
    发明申请
    RADIO-FREQUENCY DEVICE PACKAGE AND METHOD FOR FABRICATING THE SAME 有权
    无线电频率设备包及其制造方法

    公开(公告)号：US20150162242A1

    公开(公告)日：2015-06-11

    申请号：US14621703

    申请日：2015-02-13

    Applicant: MediaTek Inc.

    Inventor： Ming-Tzong YANG ,  Cheng-Chou HUNG ,  Tung-Hsing LEE ,  Wei-Che HUANG ,  Yu-Hua HUANG

    IPC: H01L21/768 ,  H01L21/268 ,  H01L21/306 ,  H01L23/00

    CPC classification number: H01L21/76898 ,  H01L21/02107 ,  H01L21/268 ,  H01L21/30625 ,  H01L23/481 ,  H01L23/5227 ,  H01L23/66 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L31/18 ,  H01L2223/6616 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2924/11 ,  H01L2924/12042 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: A method for fabricating a electronic device package provides a electronic device chip, wherein the electronic device chip includes a semiconductor substrate having a front side and a back side, wherein the semiconductor substrate has a first thickness, an electronic component disposed on the front side of the semiconductor substrate, and an interconnect structure disposed on the electronic component. The method further performs a thinning process to remove a portion of the semiconductor substrate from the back side thereof The method then removes a portion of the thinned semiconductor substrate and a portion of a dielectric layer of the interconnect structure from a back side of the thinned semiconductor substrate until a first metal layer pattern of the interconnect structure is exposed, thereby forming a through hole. Finally, the method forms a TSV structure in the through hole, and mounts the electronic device chip on a base.

    Abstract translation: 一种制造电子器件封装的方法，提供了一种电子器件芯片，其中电子器件芯片包括具有正面和背面的半导体衬底，其中半导体衬底具有第一厚度，电子部件设置在第一厚度的前侧 半导体衬底和布置在电子部件上的互连结构。 该方法还进行薄膜化处理以从背面去除半导体衬底的一部分。然后，该方法从薄化半导体的背面去除一部分减薄的半导体衬底和互连结构的介电层的一部分 衬底，直到互连结构的第一金属层图案被暴露，从而形成通孔。 最后，该方法在通孔中形成TSV结构，并将电子设备芯片安装在基座上。

    APPARATUSES AND METHODS FOR COORDINATING OPERATIONS ASSOCIATED WITH MULTIPLE SUBSCRIBER IDENTITIES
    7.
    发明申请
    APPARATUSES AND METHODS FOR COORDINATING OPERATIONS ASSOCIATED WITH MULTIPLE SUBSCRIBER IDENTITIES 有权

    公开(公告)号：US20210127443A1

    公开(公告)日：2021-04-29

    申请号：US16662177

    申请日：2019-10-24

    Applicant: MEDIATEK INC.

    Inventor： Yu-Hua HUANG ,  Chin-Wei HSU

    IPC: H04W76/16 ,  H04W76/27 ,  H04W8/20 ,  H04W80/08

    Abstract: A mobile communication device including a Radio Frequency (RF) device and a controller is provided. The controller activates a predetermine Application (APP), and provides a Packet-Switched (PS) data service for the predetermined APP using a first subscriber identity via the RF device. Also, the controller establishes a Radio Resource Control (RRC) connection using a second subscriber identity via the RF device to enable the mobile communication device to enter an RRC connected mode after the predetermined APP is activated, and keeps the mobile communication device in the RRC connected mode associated with the second subscriber identity while providing the PS data service for the predetermined APP using the first subscriber identity.

    SEMICONDUCTOR PACKAGE WITH THROUGH SILICON VIA INTERCONNECT
    10.
    发明申请
    SEMICONDUCTOR PACKAGE WITH THROUGH SILICON VIA INTERCONNECT 有权
    具有通过互连的硅的半导体封装

    公开(公告)号：US20130270670A1

    公开(公告)日：2013-10-17

    申请号：US13855873

    申请日：2013-04-03

    Applicant: MEDIATEK INC.

    Inventor： Ming-Tzong YANG ,  Yu-Hua HUANG ,  Wei-Che HUANG

    IPC: H01L23/538

    CPC classification number: H01L23/481 ,  H01L21/76898 ,  H01L23/528 ,  H01L23/5384 ,  H01L24/11 ,  H01L27/088 ,  H01L29/0649 ,  H01L29/42356 ,  H01L2224/02372 ,  H01L2224/0912 ,  H01L2225/06541

    Abstract: The invention provides a semiconductor package with a through silicon via (TSV) interconnect. An exemplary embodiment of the semiconductor package with a TSV interconnect includes a semiconductor substrate, having a front side and a back side. A contact array is disposed on the front side of the semiconductor substrate. An isolation structure is disposed in the semiconductor substrate, underlying the contact array. The TSV interconnect is formed through the semiconductor substrate, overlapping with the contact array and the isolation structure.

    Abstract translation: 本发明提供一种具有通硅通孔（TSV）互连的半导体封装。 具有TSV互连的半导体封装的示例性实施例包括具有前侧和后侧的半导体衬底。 接触阵列设置在半导体衬底的前侧。 隔离结构设置在半导体衬底中，位于接触阵列的下面。 TSV互连通过半导体衬底形成，与接触阵列和隔离结构重叠。

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