公开(公告)号：US09666576B2

公开(公告)日：2017-05-30

申请号：US14884981

申请日：2015-10-16

Applicant: MediaTek Inc.

Inventor： Chien-Kai Huang ,  Yuan-Fu Chung ,  Bo-Shih Huang ,  Chang-Tzu Wang

IPC: H01L27/02 ,  H01L29/861 ,  H01L29/06

CPC classification number: H01L27/0255 ,  H01L27/0296 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/8611

Abstract: An electrostatic discharge (ESD) protection device includes a semiconductor substrate and a pair of first well regions formed in the semiconductor substrate, wherein the pair of first well regions have a first conductivity type and are separated by at least one portion of the semiconductor substrate. In addition, the ESD protection device further includes a first doping region formed in a portion of the at least one portion of the semiconductor substrate separating the pair of first well regions, having a second conductivity type opposite to the first conductivity type. Moreover, the ESD protection device further includes a pair of second doping regions respectively formed in one of the first well regions, having the first conductivity type, and a pair of insulating layers respectively formed over a portion of the semiconductor substrate to cover a portion of the first doped region and one of the second doping regions.

公开(公告)号：US20160049462A1

公开(公告)日：2016-02-18

申请号：US14748161

申请日：2015-06-23

Applicant: Mediatek Inc.

Inventor： Chien-Kai Huang ,  Yuan-Fu Chung ,  Yuan-Hung Chung

IPC: H01L49/02

CPC classification number: H01L28/86 ,  H01L23/5223 ,  H01L28/60 ,  H01L28/88 ,  H01L28/92 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention provides a semiconductor capacitor structure. The semiconductor capacitor structure comprises a first metal layer, a second metal layer and a first dielectric layer. The first metal layer is arranged to be a part of a first electrode of the semiconductor capacitor structure, and the first metal layer comprises a first portion and a second portion. The first portion is formed to have a first pattern, and the second portion is connected to the first portion. The second metal layer is arranged to be a part of a second electrode of the semiconductor capacitor structure, and the first dielectric layer is formed between the first metal layer and the second metal layer.

Abstract translation: 本发明提供一种半导体电容器结构。 半导体电容器结构包括第一金属层，第二金属层和第一介电层。 第一金属层被布置为半导体电容器结构的第一电极的一部分，并且第一金属层包括第一部分和第二部分。 第一部分形成为具有第一图案，并且第二部分连接到第一部分。 第二金属层被布置为半导体电容器结构的第二电极的一部分，并且第一介电层形成在第一金属层和第二金属层之间。

公开(公告)号：US10236285B2

公开(公告)日：2019-03-19

申请号：US15495185

申请日：2017-04-24

Applicant: MediaTek Inc.

Inventor： Chien-Kai Huang ,  Yuan-Fu Chung ,  Bo-Shih Huang ,  Chang-Tzu Wang

IPC: H01L27/02 ,  H01L29/861 ,  H01L29/06

Abstract: A semiconductor device includes a semiconductor substrate and a pair of first well regions formed in the semiconductor substrate, wherein the pair of first well regions have a first conductivity type and are separated by at least one portion of the semiconductor substrate. The semiconductor device also includes a first doping region formed in a portion of at least one portion of the semiconductor substrate separating the pair of first well regions, and a pair of second doping regions, respectively formed in one of the pair of first well regions, having the first conductivity type. Further, the semiconductor device includes a pair of insulating layers, respectively formed over a portion of the semiconductor substrate to cover a portion of the first doped region and one of the pair of second doping regions.

公开(公告)号：US20230260894A1

公开(公告)日：2023-08-17

申请号：US18097296

申请日：2023-01-16

Applicant: MEDIATEK INC.

Inventor： Chu-Wei Hu ,  Chien-Kai Huang ,  Tien-Yu Lu

IPC: H01L23/522 ,  H01L23/00 ,  H10B80/00 ,  H01L23/498 ,  H01L23/528

CPC classification number: H01L23/5223 ,  H01L24/08 ,  H10B80/00 ,  H01L24/09 ,  H01L24/05 ,  H01L24/16 ,  H01L24/24 ,  H01L24/73 ,  H01L23/49833 ,  H01L23/49816 ,  H01L23/5286 ,  H01L2224/08145 ,  H01L2924/1443 ,  H01L2924/1433 ,  H01L2224/09515 ,  H01L2224/05647 ,  H01L2224/16225 ,  H01L2224/24225 ,  H01L2224/73209 ,  H01L2924/1438 ,  H01L2924/1441

Abstract: A semiconductor device includes an application processor (AP) die and a memory die directly bonded to the AP die. The memory die includes a substrate, a non-volatile memory structure on the substrate, and at least one trench capacitor in the substrate.

公开(公告)号：US10096543B2

公开(公告)日：2018-10-09

申请号：US14748161

申请日：2015-06-23

Applicant: MEDIATEK INC.

Inventor： Chien-Kai Huang ,  Yuan-Fu Chung ,  Yuan-Hung Chung

IPC: H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L23/522 ,  H01L49/02

Abstract: The present invention provides a semiconductor capacitor structure. The semiconductor capacitor structure comprises a first metal layer, a second metal layer and a first dielectric layer. The first metal layer is arranged to be a part of a first electrode of the semiconductor capacitor structure, and the first metal layer comprises a first portion and a second portion. The first portion is formed to have a first pattern, and the second portion is connected to the first portion. The second metal layer is arranged to be a part of a second electrode of the semiconductor capacitor structure, and the first dielectric layer is formed between the first metal layer and the second metal layer.