Invention Grant
- Patent Title: Semiconductor capacitor structure for high voltage sustain
-
Application No.: US14748161Application Date: 2015-06-23
-
Publication No.: US10096543B2Publication Date: 2018-10-09
- Inventor: Chien-Kai Huang , Yuan-Fu Chung , Yuan-Hung Chung
- Applicant: MEDIATEK INC.
- Applicant Address: TW Hsin-Chu
- Assignee: MediaTek Inc.
- Current Assignee: MediaTek Inc.
- Current Assignee Address: TW Hsin-Chu
- Agency: Wolf, Greenfield & Sacks, P.C.
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/76 ; H01L29/94 ; H01L23/522 ; H01L49/02
Abstract:
The present invention provides a semiconductor capacitor structure. The semiconductor capacitor structure comprises a first metal layer, a second metal layer and a first dielectric layer. The first metal layer is arranged to be a part of a first electrode of the semiconductor capacitor structure, and the first metal layer comprises a first portion and a second portion. The first portion is formed to have a first pattern, and the second portion is connected to the first portion. The second metal layer is arranged to be a part of a second electrode of the semiconductor capacitor structure, and the first dielectric layer is formed between the first metal layer and the second metal layer.
Public/Granted literature
- US20160049462A1 SEMICONDUCTOR CAPACITOR STRUCTURE FOR HIGH VOLTAGE SUSTAIN Public/Granted day:2016-02-18
Information query
IPC分类:
