公开(公告)号：US10886405B2

公开(公告)日：2021-01-05

申请号：US15371293

申请日：2016-12-07

申请人： MACRONIX INTERNATIONAL CO., LTD.

发明人： Yung-Hsiang Chen ,  Yao-Wen Chang ,  Chu-Yung Liu ,  I-Chen Yang ,  Hsin-Wen Chang

IPC分类号： H01L29/78 ,  H01L29/08 ,  H01L29/10 ,  H01L27/112 ,  H01L29/66 ,  H01L29/06

摘要： A semiconductor structure includes a first source/drain region, a second source/drain region, a channel doping region, a gate structure, a first well and a second well. The second source/drain region is disposed opposite to the first source/drain region. The channel doping region is disposed between the first source/drain region and the second source/drain region. The gate structure is disposed on the channel doping region. The first well has a first portion disposed under the first source/drain region. The second well is disposed opposite to the first well and separated from the second source/drain region. The first source/drain region, the second source/drain region and the channel doping region have a first conductive type. The first well and the second well have a second conductive type different from the first conductive type.

公开(公告)号：US20180158950A1

公开(公告)日：2018-06-07

申请号：US15371293

申请日：2016-12-07

申请人： MACRONIX INTERNATIONAL CO., LTD.

发明人： Yung-Hsiang Chen ,  Yao-Wen Chang ,  Chu-Yung Liu ,  I-Chen Yang ,  Hsin-Wen Chang

IPC分类号： H01L29/78 ,  H01L29/08 ,  H01L29/10 ,  H01L29/06 ,  H01L27/088 ,  H01L27/112

CPC分类号： H01L29/7838 ,  H01L27/11286 ,  H01L29/0623 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/66659 ,  H01L29/7835

摘要： A semiconductor structure includes a first source/drain region, a second source/drain region, a channel doping region, a gate structure, a first well and a second well. The second source/drain region is disposed opposite to the first source/drain region. The channel doping region is disposed between the first source/drain region and the second source/drain region. The gate structure is disposed on the channel doping region. The first well has a first portion disposed under the first source/drain region. The second well is disposed opposite to the first well and separated from the second source/drain region. The first source/drain region, the second source/drain region and the channel doping region have a first conductive type. The first well and the second well have a second conductive type different from the first conductive type.